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Behaviour of semiconductor nuclear-particle detectors; Comportement des semi-conducteurs comme detecteurs de particules nucleaires; Povedenie detektorov yadernykh chastits na poluprovodnikakh; Propiedades de los detectores de particulas nucleares a base de semiconductores

Conference:

Abstract

Experimental and theoretical studies of the behaviour of semiconductor nuclear-particle detectors have been carried out over the temperature range of 0.2{sup o}K to 300{sup o}K. A simple theoretical model for the detector behaviour, which is found to describe the observed behaviour over a wide range of parameters, is presented. The importance of semiconductor purity and bias voltage in connection with pulse height, pulse rise-time and detector area is discussed. Empirical studies of noise and energy resolution indicate that for alpha particles the smallest observed peak-widths are substantially larger than those expected on the basis of electrical noise from the detector and amplifier. Equivalent noise values of {<=} 3 keV full-width at half maximum (FWHM) have been found for a 40-mm{sup 2} silicon surface-barrier detector at 77{sup o}K. Semiconductor detectors exhibit a ''pulse-height defect'' for fission fragments. There is evidence that this defect is not caused by a ''dead layer''. If electric fields which are insufficient to insure complete ''collection'' are responsible for the defect, the necessary minimum field (at the surface) is > 3 x 10{sup 4} V/cm for fission fragments, as compared to the value of 2 x 10{sup 3} V/cm which is found necessary in the case of  More>>
Authors:
Walter, F J; Dabbs, J W.T.; Roberts, L D [1] 
  1. Oak Ridge National Laboratory, Oak Ridge, TN (United States)
Publication Date:
Apr 15, 1962
Product Type:
Conference
Resource Relation:
Conference: Conference on Nuclear Electronics, Belgrade, Yugoslavia (Serbia), 15-20 May 1961; Other Information: 7 figs, 7 refs; Related Information: In: Nuclear Electronics I. Proceedings of the Conference on Nuclear Electronics. Vol. I| 611 p.
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; ALPHA PARTICLES; AMPLIFIERS; ANGULAR DISTRIBUTION; DIELECTRIC MATERIALS; ELECTRIC FIELDS; ELECTRIC POTENTIAL; ENERGY RESOLUTION; FINE STRUCTURE; FISSION FRAGMENTS; KEV RANGE; NUCLEAR ALIGNMENT; PEAKS; PULSE RISE TIME; RELAXATION TIME; SEMICONDUCTOR MATERIALS; SILICON; STABILITY; SURFACE BARRIER DETECTORS; TEMPERATURE RANGE 0065-0273 K
OSTI ID:
22028341
Research Organizations:
International Atomic Energy Agency, Vienna (Austria)
Country of Origin:
IAEA
Language:
English
Other Identifying Numbers:
Other: ISSN 0074-1884; TRN: XA12N1964116607
Submitting Site:
INIS
Size:
page(s) 391-401
Announcement Date:
Jan 18, 2013

Conference:

Citation Formats

Walter, F J, Dabbs, J W.T., and Roberts, L D. Behaviour of semiconductor nuclear-particle detectors; Comportement des semi-conducteurs comme detecteurs de particules nucleaires; Povedenie detektorov yadernykh chastits na poluprovodnikakh; Propiedades de los detectores de particulas nucleares a base de semiconductores. IAEA: N. p., 1962. Web.
Walter, F J, Dabbs, J W.T., & Roberts, L D. Behaviour of semiconductor nuclear-particle detectors; Comportement des semi-conducteurs comme detecteurs de particules nucleaires; Povedenie detektorov yadernykh chastits na poluprovodnikakh; Propiedades de los detectores de particulas nucleares a base de semiconductores. IAEA.
Walter, F J, Dabbs, J W.T., and Roberts, L D. 1962. "Behaviour of semiconductor nuclear-particle detectors; Comportement des semi-conducteurs comme detecteurs de particules nucleaires; Povedenie detektorov yadernykh chastits na poluprovodnikakh; Propiedades de los detectores de particulas nucleares a base de semiconductores." IAEA.
@misc{etde_22028341,
title = {Behaviour of semiconductor nuclear-particle detectors; Comportement des semi-conducteurs comme detecteurs de particules nucleaires; Povedenie detektorov yadernykh chastits na poluprovodnikakh; Propiedades de los detectores de particulas nucleares a base de semiconductores}
author = {Walter, F J, Dabbs, J W.T., and Roberts, L D}
abstractNote = {Experimental and theoretical studies of the behaviour of semiconductor nuclear-particle detectors have been carried out over the temperature range of 0.2{sup o}K to 300{sup o}K. A simple theoretical model for the detector behaviour, which is found to describe the observed behaviour over a wide range of parameters, is presented. The importance of semiconductor purity and bias voltage in connection with pulse height, pulse rise-time and detector area is discussed. Empirical studies of noise and energy resolution indicate that for alpha particles the smallest observed peak-widths are substantially larger than those expected on the basis of electrical noise from the detector and amplifier. Equivalent noise values of {<=} 3 keV full-width at half maximum (FWHM) have been found for a 40-mm{sup 2} silicon surface-barrier detector at 77{sup o}K. Semiconductor detectors exhibit a ''pulse-height defect'' for fission fragments. There is evidence that this defect is not caused by a ''dead layer''. If electric fields which are insufficient to insure complete ''collection'' are responsible for the defect, the necessary minimum field (at the surface) is > 3 x 10{sup 4} V/cm for fission fragments, as compared to the value of 2 x 10{sup 3} V/cm which is found necessary in the case of alpha particles in Ge and Si. Detailed considerations regarding pulse rise-time at the amplifier have shown that in high-resistivity material both the ''dielectric'' relaxation time and the resistance associated with the undepleted base material can play an important role. A quantative description of the effect of detector and amplifier parameters on the shapes and rise-times associated with the pulse are presented. The advantages and problems associated with the use of surface-barrier detectors in several unique low-temperature nuclear-alignment experiments are discussed. These experiments involved fission-fragment angular distributions and resolution of alpha-fine structure with long-term stability. Matched expansion-coefficient fabrication techniques which have been successfully used to make detectors up to 8 cm{sup 2} in active area are also described. (author) [French] Les auteurs ont fait des etudes theoriques et experimentales sur le comportement des semi-conducteurs comme detecteurs de particules nucleaires a des temperatures allant de 0,2{sup o} K a 300{sup o} K. Ils presentent un modele theorique simple du comportement du detecteur qui correspond au comportement observe pour toute une gamme de valeurs des parametres. Ils examinent quelle est l'importance de la purete du semi-conducteur et de la tension de polarisation en ce qui concerne l'amplitude de l'impulsion, le temps de montee de l'impulsion et la surface du detecteur. Des etudes empiriques sur le bruit et la resolution en energie montrent que, pour des particules alpha, les plus petites largeurs de crete observees sont tres nettement plus importantes que les largeurs que l'on avait prevues en tenant compte du bruit d'origine electrique provenant du detecteur et de l'amplificateur. A 77{sup o}K, on a releve pour un detecteur a barriere de surface au silicium, d'une surface de 40 mm{sup 2}, des intensites de bruit equivalant a {<=} 3 keV (largeur totale a mi-hauteur du maximum). Les semi-conducteurs presentent un a l'egard des fragments de fission. On a tout lieu de penser que ce defaut n'est pas du a une . Si des champs electriques insuffisants pour assurer une complete sont la cause de ce defaut, le gradient de champ necessaire (a la surface) est superieur a 3 {center_dot} 10{sup 4} V/cm dans le cas de fragments de fission contre 2 {center_dot} 10{sup 3} V/cm dans le cas de particules alpha de Ge et de Si. Des etudes detaillees sur le temps de montee des impulsions au niveau de l'amplificateur ont montre que pour des substances de grande resistivite le temps de relaxation dielectrique et la resistance propres aux substances de base non appauvries peuvent jouer un role important. Les auteurs presentent une description quantitative de l'effet des parametres des detecteurs et des amplificateurs sur les formes et les temps de montee des impulsions. Ils etudient les avantages et les defauts des detecteurs a barriere de surface utilises dans des experiences d'alignement nucleaire a basse temperature invariable. Ces experiences comprennent l'etude des distributions angulaires des fragments de fission et de la resolution - stable a long terme - des structures fines des particules alpha. On decrit egalement les techniques de fabrication, selon des coefficients de developpement adaptes, qui ont ete utilisees avec succes pour realiser des detecteurs de surface active pouvant aller jusqu'a 8 cm{sup 2}. (author) [Spanish] Los autores han realizado estudios experimentales y teoricos del comportamiento de los detectores de particulas nucleares a base de semiconductores, en el intervalo de temperaturas de 0,2{sup o}K a 300{sup o}K. Presentan un modelo teorico muy sencillo para las caracteristicas del detector, que describe las propiedades observadas experimentalmente para un amplio margen de parametros. Discuten la importancia de la pureza del semiconductor y de la tension de polarizacion en relacion con la amplitud'del impulso, con su tiempo de elevacion y con el area del detector. Los estudios empiricos del ruido y de la resolucion energetica indican que, en el caso de particulas alfa, las menores anchuras observadas en los maximos son sensiblemente mayores de lo que cabe esperar del ruido del detector y del amplificador. Para un detector de silicio de barrera superficial, de 40 mm{sup 2}, han encontrado para el ruido a 77{sup o}K valores {<=} 3 keV (anchura total al semimaximo). Los detectores basados en semiconductores dan un para los fragmentos de fision. Existen pruebas de que dicho defecto no se debe a una . Si los responsables del defecto fueran campos electricos incapaces de asegurar una coleccion completa, el campo minimo necesario (en la superficie) para los fragmentos de fision seria de mas de 3 {center_dot} 10{sup 4} V/cm, frente a 2 {center_dot} 10{sup 3} V/cm para las particulas alfa en el Ge y el Si. Un estudio detallado del tiempo de elevacion del impulso en el amplificador ha puesto en claro que tanto el tiempo de relajacion como la resistencia correspondiente al material de base no purificado pueden desempenar un papel muy importante en los materiales de elevada resistividad. La memoria presenta una descripcion cuantitativa del efecto de los parametros del detector y del amplificador sobre la forma y el tiempo de elevacion de los impulsos. Se discuten las ventajas y los problemas que presenta la utilizacion de detectores de barrera superficial en varios experimentos muy especiales de alineacion nuclear realizados a baja temperatura, entre otros, referentes a las distribuciones angulares de fragmentos de fision y a la resolucion de la estructura alfa fina con estabilidad a largo plazo. Tambien se describen tecnicas de fabricacion basadas en coeficientes de dilatacion equiparados, que han permitido obtener detectores con areas activas de hasta 8 cm{sup 2}. (author) [Russian] Byli provedeny ehksperimental'nye i teoreticheskie issledovaniya povedeniya detektorov yadernykh chastits na poluprovodnikakh pri temperaturakh ot 0,2{sup o}K do 300{sup o}K. V doklade privoditsya prostaya teoreticheskaya model' povedeniya detektora, kotoraya, kak bylo ustanovleno, otrazhaet nablyudaemoe povedenie pri bol'shoj amplitude parametrov. V doklade obsuzhdaetsya vazhnost' chistoty poluprovodnikov i smeshcheniya napryazheniya v svyazi s amplitudoj impul'sa, vremenem narastaniya impul'sa i zonoj detektsii. EHmpiricheski issledovaniya shuma i ehnergeticheskogo razresheniya svidetel'stvuyut o tom, chto dlya al'fa-chastits nablyudaemaya naimen'shaya shirina pikov znachitel'no bol'she, chem ta, kotoraya ozhidaetsya na osnove ehlektricheskogo shuma ot detektora i usilitelya. Dlya bar'ernogo detektora s kremnievoj poverkhnost'yu v 40 mm{sup 2} pri 77{sup o}K. byli ustanovleny pokazateli shuma, ehkvivalentnye c {<=} 3 kehv (polnaya shirina pri polumaksimume). Poluprovodnikovym detektoram svojstvenen ''defekt amplitudy impul'sa'' dlya oskolkov deleniya. Imeyutsya dannye, svidetel'stvuyushchie o tom, chto ehtot defekt ne vyzyvaetsya ''neradioaktivnym sloem''. Esli ehlektricheskie polya, kotorye yavlyayutsya nedostatochnymi dlya obespecheniya polnogo ''sbora'', vyzyvayut ehtot defekt, neobkhodimym minimal'nym polem (na poverkhnosti) yavlyaetsya pole svyshe 3 x 10{sup 4} vol't/sm dlya oskolkov deleniya po sravneniyu c 2 x 10{sup 3} vol't/sm, neobkhodimost' chego byla ustanovlena dlya al'fa-chastits v germanii i kremnii. Podrobnye issledovaniya vremeni narastaniya impul'sa v usilitele pokazali, chto v materialakh s vysokoj soprotivlyaemost'yu kak vremya ''diehlektricheskoj'' relaksatsii, tak i soprotivlenie, svyazannoe s neistoshchennym osnovnym materialom, mogut igrat' vazhnuyu rol'. V doklade daetsya kolichestvennoe opisanie dejstviya parametrov detektora i usilitelya na formy i vremya narastaniya, svyazannye s impul'som. V doklade obsuzhdayutsya preimushchestva i problemy, svyazannye s ispol'zovaniem poverkhnostnykh bar'ernykh detektorov v nekotorykh opytakh po yadernomu vyravnivaniyu pri unikal'no nizkikh temperaturakh. V khode ehtikh opytov proiskhodili uglovye raspredeleniya oskolkov raspada i razreshenie al'fa-mikrostruktury s dolgosrochnoj stabil'nost'yu. V doklade takzhe daetsya opisanie tekhniki izgotovleniya s koehffitsientom soglasovannogo rasshireniya, kotoraya uspeshno ispol'zovalas' dlya izgotovleniya detektorov do 8 cm{sup 2} v aktivnoj zone. (author)}
place = {IAEA}
year = {1962}
month = {Apr}
}