Abstract
Current-voltage characteristics of surface-irradiated photodiodes based on the InAsSbP/InAs structures are analyzed using experimental data on the distribution of electroluminescence intensity over the diode surface and taking into account thickening the current streamlines near the contacts. The influence of the potential barrier associated with the N-InAsSbP/n-InAs junction in double heterostructures on the differential resistance of diodes under zero bias, the value of the reverse current, and spreading of the forward current is discussed.
Zotova, N V;
Karandashev, S A;
Matveev, B. A., E-mail: Bmat@iropt3.ioffe.ru;
Remennyy, M A;
Rybal'chenko, A Yu;
Stus', N M
[1]
- Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation)
Citation Formats
Zotova, N V, Karandashev, S A, Matveev, B. A., E-mail: Bmat@iropt3.ioffe.ru, Remennyy, M A, Rybal'chenko, A Yu, and Stus', N M.
Spatial nonuniformity of current flow and its consideration in determination of characteristics of surface illuminated InAsSbP/InAs-based photodiodes.
United States: N. p.,
2011.
Web.
doi:10.1134/S1063782611040245.
Zotova, N V, Karandashev, S A, Matveev, B. A., E-mail: Bmat@iropt3.ioffe.ru, Remennyy, M A, Rybal'chenko, A Yu, & Stus', N M.
Spatial nonuniformity of current flow and its consideration in determination of characteristics of surface illuminated InAsSbP/InAs-based photodiodes.
United States.
https://doi.org/10.1134/S1063782611040245
Zotova, N V, Karandashev, S A, Matveev, B. A., E-mail: Bmat@iropt3.ioffe.ru, Remennyy, M A, Rybal'chenko, A Yu, and Stus', N M.
2011.
"Spatial nonuniformity of current flow and its consideration in determination of characteristics of surface illuminated InAsSbP/InAs-based photodiodes."
United States.
https://doi.org/10.1134/S1063782611040245.
@misc{etde_22004825,
title = {Spatial nonuniformity of current flow and its consideration in determination of characteristics of surface illuminated InAsSbP/InAs-based photodiodes}
author = {Zotova, N V, Karandashev, S A, Matveev, B. A., E-mail: Bmat@iropt3.ioffe.ru, Remennyy, M A, Rybal'chenko, A Yu, and Stus', N M}
abstractNote = {Current-voltage characteristics of surface-irradiated photodiodes based on the InAsSbP/InAs structures are analyzed using experimental data on the distribution of electroluminescence intensity over the diode surface and taking into account thickening the current streamlines near the contacts. The influence of the potential barrier associated with the N-InAsSbP/n-InAs junction in double heterostructures on the differential resistance of diodes under zero bias, the value of the reverse current, and spreading of the forward current is discussed.}
doi = {10.1134/S1063782611040245}
journal = []
issue = {4}
volume = {45}
journal type = {AC}
place = {United States}
year = {2011}
month = {Apr}
}
title = {Spatial nonuniformity of current flow and its consideration in determination of characteristics of surface illuminated InAsSbP/InAs-based photodiodes}
author = {Zotova, N V, Karandashev, S A, Matveev, B. A., E-mail: Bmat@iropt3.ioffe.ru, Remennyy, M A, Rybal'chenko, A Yu, and Stus', N M}
abstractNote = {Current-voltage characteristics of surface-irradiated photodiodes based on the InAsSbP/InAs structures are analyzed using experimental data on the distribution of electroluminescence intensity over the diode surface and taking into account thickening the current streamlines near the contacts. The influence of the potential barrier associated with the N-InAsSbP/n-InAs junction in double heterostructures on the differential resistance of diodes under zero bias, the value of the reverse current, and spreading of the forward current is discussed.}
doi = {10.1134/S1063782611040245}
journal = []
issue = {4}
volume = {45}
journal type = {AC}
place = {United States}
year = {2011}
month = {Apr}
}