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Spatial nonuniformity of current flow and its consideration in determination of characteristics of surface illuminated InAsSbP/InAs-based photodiodes

Abstract

Current-voltage characteristics of surface-irradiated photodiodes based on the InAsSbP/InAs structures are analyzed using experimental data on the distribution of electroluminescence intensity over the diode surface and taking into account thickening the current streamlines near the contacts. The influence of the potential barrier associated with the N-InAsSbP/n-InAs junction in double heterostructures on the differential resistance of diodes under zero bias, the value of the reverse current, and spreading of the forward current is discussed.
Authors:
Zotova, N V; Karandashev, S A; Matveev, B. A., E-mail: Bmat@iropt3.ioffe.ru; Remennyy, M A; Rybal'chenko, A Yu; Stus', N M [1] 
  1. Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation)
Publication Date:
Apr 15, 2011
Product Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 45; Journal Issue: 4; Other Information: Copyright (c) 2011 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Subject:
36 MATERIALS SCIENCE; ELECTROLUMINESCENCE; INDIUM ARSENIDES; PHOTODIODES; SURFACES
OSTI ID:
22004825
Country of Origin:
United States
Language:
English
Other Identifying Numbers:
Journal ID: ISSN 1063-7826; CODEN: SMICES; TRN: US12K1627094930
Submitting Site:
USN
Size:
page(s) 543-549
Announcement Date:
Dec 23, 2012

Citation Formats

Zotova, N V, Karandashev, S A, Matveev, B. A., E-mail: Bmat@iropt3.ioffe.ru, Remennyy, M A, Rybal'chenko, A Yu, and Stus', N M. Spatial nonuniformity of current flow and its consideration in determination of characteristics of surface illuminated InAsSbP/InAs-based photodiodes. United States: N. p., 2011. Web. doi:10.1134/S1063782611040245.
Zotova, N V, Karandashev, S A, Matveev, B. A., E-mail: Bmat@iropt3.ioffe.ru, Remennyy, M A, Rybal'chenko, A Yu, & Stus', N M. Spatial nonuniformity of current flow and its consideration in determination of characteristics of surface illuminated InAsSbP/InAs-based photodiodes. United States. doi:10.1134/S1063782611040245.
Zotova, N V, Karandashev, S A, Matveev, B. A., E-mail: Bmat@iropt3.ioffe.ru, Remennyy, M A, Rybal'chenko, A Yu, and Stus', N M. 2011. "Spatial nonuniformity of current flow and its consideration in determination of characteristics of surface illuminated InAsSbP/InAs-based photodiodes." United States. doi:10.1134/S1063782611040245. https://www.osti.gov/servlets/purl/10.1134/S1063782611040245.
@misc{etde_22004825,
title = {Spatial nonuniformity of current flow and its consideration in determination of characteristics of surface illuminated InAsSbP/InAs-based photodiodes}
author = {Zotova, N V, Karandashev, S A, Matveev, B. A., E-mail: Bmat@iropt3.ioffe.ru, Remennyy, M A, Rybal'chenko, A Yu, and Stus', N M}
abstractNote = {Current-voltage characteristics of surface-irradiated photodiodes based on the InAsSbP/InAs structures are analyzed using experimental data on the distribution of electroluminescence intensity over the diode surface and taking into account thickening the current streamlines near the contacts. The influence of the potential barrier associated with the N-InAsSbP/n-InAs junction in double heterostructures on the differential resistance of diodes under zero bias, the value of the reverse current, and spreading of the forward current is discussed.}
doi = {10.1134/S1063782611040245}
journal = {Semiconductors}
issue = {4}
volume = {45}
journal type = {AC}
place = {United States}
year = {2011}
month = {Apr}
}