Abstract
Highlights: > ZnS{sub 1-x}Se{sub x} (x = 0 to 1) thin films are successfully deposited on glass substrates by soft chemical route. > Structural, optical and electrical properties are studied. > Change in band gap, crystallite size and resistivity is noted with change in S:Se ratio. > Wide band gap material (ZnS{sub 1-x}Se{sub x}) is useful for photosensor and solar cell applications. > It utilizes whole visible light spectrum and is a best alternative to conventionally used toxic CdS. - Abstract: Thin films of nanostructured ZnS{sub 1-x}Se{sub x} with optimized growth parameters were prepared by soft chemical route on glass substrates. Ammonia free precursors were used at 80 deg. C constant bath temperature. The ratio of sulphur to selenium was changed continuously by changing the composition x (0-1), while atomic concentration of zinc was kept constant. Structure, composition and surface morphology of as-deposited films were characterized by X-ray diffraction (XRD), energy dispersive X-ray analysis (EDAX) and scanning electron microscopy (SEM), atomic force microscopy (AFM) respectively. XRD studies revealed that as-deposited films were nanostructured in nature with cubic zinc blended structure. It was further observed that the preferred orientations are along (1 1 1) plane and crystallite size decreased with increase
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Sadekar, Harishchandra K;
[1]
Department of Physics, Arts, Commerce and Science College, Sonai 414105, Maharashtra (India)];
Ghule, Anil Vithal;
[2]
Sharma, Ramphal
[1]
- Thin Film and Nanotechnology Laboratory, Department of Physics, Dr. Babasaheb Ambedkar Marathwada University, Aurangabad 431004, Maharashtra (India)
- Department of Nanotechnology, Dr. Babasaheb Ambedkar Marathwada University, Aurangabad 431004, Maharashtra (India)
Citation Formats
Sadekar, Harishchandra K, Department of Physics, Arts, Commerce and Science College, Sonai 414105, Maharashtra (India)], Ghule, Anil Vithal, and Sharma, Ramphal.
Bandgap engineering by substitution of S by Se in nanostructured ZnS{sub 1-x}Se{sub x} thin films grown by soft chemical route for nontoxic optoelectronic device applications.
Netherlands: N. p.,
2011.
Web.
doi:10.1016/j.jallcom.2011.02.089.
Sadekar, Harishchandra K, Department of Physics, Arts, Commerce and Science College, Sonai 414105, Maharashtra (India)], Ghule, Anil Vithal, & Sharma, Ramphal.
Bandgap engineering by substitution of S by Se in nanostructured ZnS{sub 1-x}Se{sub x} thin films grown by soft chemical route for nontoxic optoelectronic device applications.
Netherlands.
https://doi.org/10.1016/j.jallcom.2011.02.089
Sadekar, Harishchandra K, Department of Physics, Arts, Commerce and Science College, Sonai 414105, Maharashtra (India)], Ghule, Anil Vithal, and Sharma, Ramphal.
2011.
"Bandgap engineering by substitution of S by Se in nanostructured ZnS{sub 1-x}Se{sub x} thin films grown by soft chemical route for nontoxic optoelectronic device applications."
Netherlands.
https://doi.org/10.1016/j.jallcom.2011.02.089.
@misc{etde_21531493,
title = {Bandgap engineering by substitution of S by Se in nanostructured ZnS{sub 1-x}Se{sub x} thin films grown by soft chemical route for nontoxic optoelectronic device applications}
author = {Sadekar, Harishchandra K, Department of Physics, Arts, Commerce and Science College, Sonai 414105, Maharashtra (India)], Ghule, Anil Vithal, and Sharma, Ramphal}
abstractNote = {Highlights: > ZnS{sub 1-x}Se{sub x} (x = 0 to 1) thin films are successfully deposited on glass substrates by soft chemical route. > Structural, optical and electrical properties are studied. > Change in band gap, crystallite size and resistivity is noted with change in S:Se ratio. > Wide band gap material (ZnS{sub 1-x}Se{sub x}) is useful for photosensor and solar cell applications. > It utilizes whole visible light spectrum and is a best alternative to conventionally used toxic CdS. - Abstract: Thin films of nanostructured ZnS{sub 1-x}Se{sub x} with optimized growth parameters were prepared by soft chemical route on glass substrates. Ammonia free precursors were used at 80 deg. C constant bath temperature. The ratio of sulphur to selenium was changed continuously by changing the composition x (0-1), while atomic concentration of zinc was kept constant. Structure, composition and surface morphology of as-deposited films were characterized by X-ray diffraction (XRD), energy dispersive X-ray analysis (EDAX) and scanning electron microscopy (SEM), atomic force microscopy (AFM) respectively. XRD studies revealed that as-deposited films were nanostructured in nature with cubic zinc blended structure. It was further observed that the preferred orientations are along (1 1 1) plane and crystallite size decreased with increase in the value of x. SEM and AFM images revealed that films were uniform and pinhole free. The optical band gap (E{sub g}) was calculated from the observed transmittance spectra by Urbach method. It was found that the band gap varied linearly from 3.71 to 2.70 eV, as composition x varies 0-1. The electrical properties' study revealed that the decrease in resistivity and increase in photosensitivity, as composition x varied 0-1. The observed interesting properties of ZnS{sub 1-x}Se{sub x} thin films justified their significance in optoelectronic device fabrication and applications, and as an environment friendly alternative to the commonly used toxic material such as CdS.}
doi = {10.1016/j.jallcom.2011.02.089}
journal = []
issue = {18}
volume = {509}
place = {Netherlands}
year = {2011}
month = {May}
}
title = {Bandgap engineering by substitution of S by Se in nanostructured ZnS{sub 1-x}Se{sub x} thin films grown by soft chemical route for nontoxic optoelectronic device applications}
author = {Sadekar, Harishchandra K, Department of Physics, Arts, Commerce and Science College, Sonai 414105, Maharashtra (India)], Ghule, Anil Vithal, and Sharma, Ramphal}
abstractNote = {Highlights: > ZnS{sub 1-x}Se{sub x} (x = 0 to 1) thin films are successfully deposited on glass substrates by soft chemical route. > Structural, optical and electrical properties are studied. > Change in band gap, crystallite size and resistivity is noted with change in S:Se ratio. > Wide band gap material (ZnS{sub 1-x}Se{sub x}) is useful for photosensor and solar cell applications. > It utilizes whole visible light spectrum and is a best alternative to conventionally used toxic CdS. - Abstract: Thin films of nanostructured ZnS{sub 1-x}Se{sub x} with optimized growth parameters were prepared by soft chemical route on glass substrates. Ammonia free precursors were used at 80 deg. C constant bath temperature. The ratio of sulphur to selenium was changed continuously by changing the composition x (0-1), while atomic concentration of zinc was kept constant. Structure, composition and surface morphology of as-deposited films were characterized by X-ray diffraction (XRD), energy dispersive X-ray analysis (EDAX) and scanning electron microscopy (SEM), atomic force microscopy (AFM) respectively. XRD studies revealed that as-deposited films were nanostructured in nature with cubic zinc blended structure. It was further observed that the preferred orientations are along (1 1 1) plane and crystallite size decreased with increase in the value of x. SEM and AFM images revealed that films were uniform and pinhole free. The optical band gap (E{sub g}) was calculated from the observed transmittance spectra by Urbach method. It was found that the band gap varied linearly from 3.71 to 2.70 eV, as composition x varies 0-1. The electrical properties' study revealed that the decrease in resistivity and increase in photosensitivity, as composition x varied 0-1. The observed interesting properties of ZnS{sub 1-x}Se{sub x} thin films justified their significance in optoelectronic device fabrication and applications, and as an environment friendly alternative to the commonly used toxic material such as CdS.}
doi = {10.1016/j.jallcom.2011.02.089}
journal = []
issue = {18}
volume = {509}
place = {Netherlands}
year = {2011}
month = {May}
}