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Experimental study on the double barrier structure at room temperature

Journal Article:

Abstract

An experimental study of AlAs / GaAs / AlAs double barrier structure is carried out. The double barrier and quantum well structure are grown by MBE. The peak-to-valley ratio 2.6 : 1 with peak current density of 1.6 kA/cm/sup 2 at room temperature have been achieved. (authors)
Authors:
Sheng, H Y; Chua, S J [1] 
  1. Centre for Optoelectronics, Dept. of Electrical Engineering, National Univ. of Singapore (Singapore)
Publication Date:
Jun 15, 1994
Product Type:
Journal Article
Resource Relation:
Journal Name: Singapore Journal of Physics; Journal Volume: 10; Journal Issue: 1
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; FABRICATION; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR DIODES; TRANSISTORS; CRYSTAL GROWTH METHODS; EPITAXY; SEMICONDUCTOR DEVICES; SEMICONDUCTOR JUNCTIONS
OSTI ID:
21512888
Country of Origin:
Singapore
Language:
English
Other Identifying Numbers:
Journal ID: ISSN 0217-4251; TRN: SG1100012104335
Submitting Site:
INIS
Size:
page(s) 53-57
Announcement Date:
Dec 10, 2011

Journal Article:

Citation Formats

Sheng, H Y, and Chua, S J. Experimental study on the double barrier structure at room temperature. Singapore: N. p., 1994. Web.
Sheng, H Y, & Chua, S J. Experimental study on the double barrier structure at room temperature. Singapore.
Sheng, H Y, and Chua, S J. 1994. "Experimental study on the double barrier structure at room temperature." Singapore.
@misc{etde_21512888,
title = {Experimental study on the double barrier structure at room temperature}
author = {Sheng, H Y, and Chua, S J}
abstractNote = {An experimental study of AlAs / GaAs / AlAs double barrier structure is carried out. The double barrier and quantum well structure are grown by MBE. The peak-to-valley ratio 2.6 : 1 with peak current density of 1.6 kA/cm/sup 2 at room temperature have been achieved. (authors)}
journal = {Singapore Journal of Physics}
issue = {1}
volume = {10}
place = {Singapore}
year = {1994}
month = {Jun}
}