Abstract
An experimental study of AlAs / GaAs / AlAs double barrier structure is carried out. The double barrier and quantum well structure are grown by MBE. The peak-to-valley ratio 2.6 : 1 with peak current density of 1.6 kA/cm/sup 2 at room temperature have been achieved. (authors)
Sheng, H Y;
Chua, S J
[1]
- Centre for Optoelectronics, Dept. of Electrical Engineering, National Univ. of Singapore (Singapore)
Citation Formats
Sheng, H Y, and Chua, S J.
Experimental study on the double barrier structure at room temperature.
Singapore: N. p.,
1994.
Web.
Sheng, H Y, & Chua, S J.
Experimental study on the double barrier structure at room temperature.
Singapore.
Sheng, H Y, and Chua, S J.
1994.
"Experimental study on the double barrier structure at room temperature."
Singapore.
@misc{etde_21512888,
title = {Experimental study on the double barrier structure at room temperature}
author = {Sheng, H Y, and Chua, S J}
abstractNote = {An experimental study of AlAs / GaAs / AlAs double barrier structure is carried out. The double barrier and quantum well structure are grown by MBE. The peak-to-valley ratio 2.6 : 1 with peak current density of 1.6 kA/cm/sup 2 at room temperature have been achieved. (authors)}
journal = []
issue = {1}
volume = {10}
place = {Singapore}
year = {1994}
month = {Jun}
}
title = {Experimental study on the double barrier structure at room temperature}
author = {Sheng, H Y, and Chua, S J}
abstractNote = {An experimental study of AlAs / GaAs / AlAs double barrier structure is carried out. The double barrier and quantum well structure are grown by MBE. The peak-to-valley ratio 2.6 : 1 with peak current density of 1.6 kA/cm/sup 2 at room temperature have been achieved. (authors)}
journal = []
issue = {1}
volume = {10}
place = {Singapore}
year = {1994}
month = {Jun}
}