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Effects of doping profile on the optoelectronic properties of GaN nanowires

Abstract

GaN NWs with two different doping profiles were grown on Si(111) substrates in nitrogen rich conditions without any catalyst using an AlN buffer layer. In one case Si was supplied during the first 2 hours of the growth followed by 30 min without supply of any doping species, subsequently growth was continuing for an additional 2 hours with supplying Mg (Type-A). In the other case the reverse structure was fabricated, starting with Mg doping and ending with Si doping (Type-B). For all samples of type-B, the DAP signal in PL, {mu}-PL and CL is less intense than the NBE peak and in some cases almost not detectable. In contrast Type-A samples show a very strong DAP signal. By combining PL, {mu}-PL and CL results, we concluded that during the first stages of the growth of GaN NWs, the incorporation of Mg is hampered, while in the later phase of the growth, the Mg is more effectively incorporated and acts as an acceptor in the GaN matrix.
Authors:
Limbach, Friederich; Gotschke, Tobias; Calarco, Raffaella; [1]  Paul-Drude-Institute for Solid State Electronics, Hausvogteiplatz 5-7, 10117 Berlin (Germany)]; Stoica, Toma; [1]  Pfueller, Carsten; Brandt, Oliver; Trampert, Achim; [2]  Geburt, Sebastian; Ronning, Carsten [3] 
  1. Institute of Bio- and Nanosystems (IBN-1), Research Centre Juelich GmbH, 52425 Juelich, Germany, and JARA-FIT Fundamentals of Future Information Technology (Germany)
  2. Paul-Drude-Institute for Solid State Electronics, Hausvogteiplatz 5-7, 10117 Berlin (Germany)
  3. University Jena, Inst Solid State Phys, D-07743 Jena (Germany)
Publication Date:
Jul 01, 2011
Product Type:
Journal Article
Resource Relation:
Journal Name: Verhandlungen der Deutschen Physikalischen Gesellschaft; Journal Issue: Dresden 2011 issue; Conference: 75. Annual meeting of the DPG and combined DPG Spring meeting of the condensed matter section and the section AMOP with further DPG divisions environmental physics, history of physics, microprobes, radiation and medical physics, as well as the working groups energy, equal opportunities, industry and business, information, philosophy of physics, physics and disarmament, young DPG, Dresden (Germany), 13-18 Mar 2011; Other Information: Session: HL 30.4 Di 11:00; No further information available; Also available as printed version: Verhandlungen der Deutschen Physikalischen Gesellschaft v. 46(1)
Subject:
36 MATERIALS SCIENCE; ALUMINIUM NITRIDES; CONCENTRATION RATIO; DOPED MATERIALS; GALLIUM NITRIDES; GROWTH; MAGNESIUM ADDITIONS; PHOTOLUMINESCENCE; QUANTUM WIRES; SILICON; SILICON ADDITIONS; SUBSTRATES
OSTI ID:
21484932
Country of Origin:
Germany
Language:
English
Other Identifying Numbers:
Journal ID: ISSN 0420-0195; VDPEAZ; TRN: DE11GC043
Availability:
http://www.dpg-verhandlungen.de
Submitting Site:
DE
Size:
1 pages
Announcement Date:
Oct 27, 2011

Citation Formats

Limbach, Friederich, Gotschke, Tobias, Calarco, Raffaella, Paul-Drude-Institute for Solid State Electronics, Hausvogteiplatz 5-7, 10117 Berlin (Germany)], Stoica, Toma, Pfueller, Carsten, Brandt, Oliver, Trampert, Achim, Geburt, Sebastian, and Ronning, Carsten. Effects of doping profile on the optoelectronic properties of GaN nanowires. Germany: N. p., 2011. Web.
Limbach, Friederich, Gotschke, Tobias, Calarco, Raffaella, Paul-Drude-Institute for Solid State Electronics, Hausvogteiplatz 5-7, 10117 Berlin (Germany)], Stoica, Toma, Pfueller, Carsten, Brandt, Oliver, Trampert, Achim, Geburt, Sebastian, & Ronning, Carsten. Effects of doping profile on the optoelectronic properties of GaN nanowires. Germany.
Limbach, Friederich, Gotschke, Tobias, Calarco, Raffaella, Paul-Drude-Institute for Solid State Electronics, Hausvogteiplatz 5-7, 10117 Berlin (Germany)], Stoica, Toma, Pfueller, Carsten, Brandt, Oliver, Trampert, Achim, Geburt, Sebastian, and Ronning, Carsten. 2011. "Effects of doping profile on the optoelectronic properties of GaN nanowires." Germany.
@misc{etde_21484932,
title = {Effects of doping profile on the optoelectronic properties of GaN nanowires}
author = {Limbach, Friederich, Gotschke, Tobias, Calarco, Raffaella, Paul-Drude-Institute for Solid State Electronics, Hausvogteiplatz 5-7, 10117 Berlin (Germany)], Stoica, Toma, Pfueller, Carsten, Brandt, Oliver, Trampert, Achim, Geburt, Sebastian, and Ronning, Carsten}
abstractNote = {GaN NWs with two different doping profiles were grown on Si(111) substrates in nitrogen rich conditions without any catalyst using an AlN buffer layer. In one case Si was supplied during the first 2 hours of the growth followed by 30 min without supply of any doping species, subsequently growth was continuing for an additional 2 hours with supplying Mg (Type-A). In the other case the reverse structure was fabricated, starting with Mg doping and ending with Si doping (Type-B). For all samples of type-B, the DAP signal in PL, {mu}-PL and CL is less intense than the NBE peak and in some cases almost not detectable. In contrast Type-A samples show a very strong DAP signal. By combining PL, {mu}-PL and CL results, we concluded that during the first stages of the growth of GaN NWs, the incorporation of Mg is hampered, while in the later phase of the growth, the Mg is more effectively incorporated and acts as an acceptor in the GaN matrix.}
journal = {Verhandlungen der Deutschen Physikalischen Gesellschaft}
issue = {Dresden 2011 issue}
place = {Germany}
year = {2011}
month = {Jul}
}