Abstract
We report on our study of the influence of varying concentrations of Si doping on the secondary electron emission (SEE) yield of MgO thin films prepared by electron beam evaporation technique. The series of Si-doped MgO films were microstructurally characterized with various tools like X-ray diffraction, scanning electron microscopy and atomic force microscopy. The optimization of the concentration of Si doping is seen to enhance the SEE yield. We discuss the correlation of SEE yield in the context of different deposition and measurement conditions and crystalline orientation.
Ram, Sanjay K., E-mail: sanjayk.ram@gmail.co [Laboratoire de Physique des Interfaces et des Couches Minces (UMR 7647 du CNRS), Ecole Polytechnique, 91128 Palaiseau Cedex (France);
Department of Physics, Indian Institute of Technology Kanpur, Kanpur-208016 (India)];
Barik, U K;
[1]
Sarkar, Surajit;
Biswas, Paramananda;
[2]
Singh, Vandana;
[3]
Dwivedi, H K;
[1]
Kumar, Satyendra
[2]
- Samtel Color Limited, Ghaziabad-201009 (India)
- Department of Physics, Indian Institute of Technology Kanpur, Kanpur-208016 (India)
- Laboratoire de Physique des Interfaces et des Couches Minces (UMR 7647 du CNRS), Ecole Polytechnique, 91128 Palaiseau Cedex (France)
Citation Formats
Ram, Sanjay K., E-mail: sanjayk.ram@gmail.co [Laboratoire de Physique des Interfaces et des Couches Minces (UMR 7647 du CNRS), Ecole Polytechnique, 91128 Palaiseau Cedex (France), Department of Physics, Indian Institute of Technology Kanpur, Kanpur-208016 (India)], Barik, U K, Sarkar, Surajit, Biswas, Paramananda, Singh, Vandana, Dwivedi, H K, and Kumar, Satyendra.
Discharge characteristics of plasma display panels with Si-doped MgO protective layers.
Netherlands: N. p.,
2009.
Web.
doi:10.1016/j.tsf.2009.02.111.
Ram, Sanjay K., E-mail: sanjayk.ram@gmail.co [Laboratoire de Physique des Interfaces et des Couches Minces (UMR 7647 du CNRS), Ecole Polytechnique, 91128 Palaiseau Cedex (France), Department of Physics, Indian Institute of Technology Kanpur, Kanpur-208016 (India)], Barik, U K, Sarkar, Surajit, Biswas, Paramananda, Singh, Vandana, Dwivedi, H K, & Kumar, Satyendra.
Discharge characteristics of plasma display panels with Si-doped MgO protective layers.
Netherlands.
https://doi.org/10.1016/j.tsf.2009.02.111
Ram, Sanjay K., E-mail: sanjayk.ram@gmail.co [Laboratoire de Physique des Interfaces et des Couches Minces (UMR 7647 du CNRS), Ecole Polytechnique, 91128 Palaiseau Cedex (France), Department of Physics, Indian Institute of Technology Kanpur, Kanpur-208016 (India)], Barik, U K, Sarkar, Surajit, Biswas, Paramananda, Singh, Vandana, Dwivedi, H K, and Kumar, Satyendra.
2009.
"Discharge characteristics of plasma display panels with Si-doped MgO protective layers."
Netherlands.
https://doi.org/10.1016/j.tsf.2009.02.111.
@misc{etde_21458751,
title = {Discharge characteristics of plasma display panels with Si-doped MgO protective layers}
author = {Ram, Sanjay K., E-mail: sanjayk.ram@gmail.co [Laboratoire de Physique des Interfaces et des Couches Minces (UMR 7647 du CNRS), Ecole Polytechnique, 91128 Palaiseau Cedex (France), Department of Physics, Indian Institute of Technology Kanpur, Kanpur-208016 (India)], Barik, U K, Sarkar, Surajit, Biswas, Paramananda, Singh, Vandana, Dwivedi, H K, and Kumar, Satyendra}
abstractNote = {We report on our study of the influence of varying concentrations of Si doping on the secondary electron emission (SEE) yield of MgO thin films prepared by electron beam evaporation technique. The series of Si-doped MgO films were microstructurally characterized with various tools like X-ray diffraction, scanning electron microscopy and atomic force microscopy. The optimization of the concentration of Si doping is seen to enhance the SEE yield. We discuss the correlation of SEE yield in the context of different deposition and measurement conditions and crystalline orientation.}
doi = {10.1016/j.tsf.2009.02.111}
journal = []
issue = {23}
volume = {517}
place = {Netherlands}
year = {2009}
month = {Oct}
}
title = {Discharge characteristics of plasma display panels with Si-doped MgO protective layers}
author = {Ram, Sanjay K., E-mail: sanjayk.ram@gmail.co [Laboratoire de Physique des Interfaces et des Couches Minces (UMR 7647 du CNRS), Ecole Polytechnique, 91128 Palaiseau Cedex (France), Department of Physics, Indian Institute of Technology Kanpur, Kanpur-208016 (India)], Barik, U K, Sarkar, Surajit, Biswas, Paramananda, Singh, Vandana, Dwivedi, H K, and Kumar, Satyendra}
abstractNote = {We report on our study of the influence of varying concentrations of Si doping on the secondary electron emission (SEE) yield of MgO thin films prepared by electron beam evaporation technique. The series of Si-doped MgO films were microstructurally characterized with various tools like X-ray diffraction, scanning electron microscopy and atomic force microscopy. The optimization of the concentration of Si doping is seen to enhance the SEE yield. We discuss the correlation of SEE yield in the context of different deposition and measurement conditions and crystalline orientation.}
doi = {10.1016/j.tsf.2009.02.111}
journal = []
issue = {23}
volume = {517}
place = {Netherlands}
year = {2009}
month = {Oct}
}