Abstract
We illustrate the behaviour of As when it is confined, by the implantation technique, in a SiO{sub 2}(70nm)/Si(30nm)/SiO{sub 2}(70nm) multilayer and its spatial redistribution when annealing processes are performed. By Rutherford backscattering spectrometry and Z-contrast transmission electron microscopy we found an As accumulation at the Si/SiO{sub 2} interfaces and at the Si grain boundaries with no segregation of the As in the Si layer. Such an effect is in agreement with a model that assumes a traps distribution in the Si in the first 2-3 nm above the SiO{sub 2}/Si interfaces and along the Si grain boundaries. The traps concentration at the Si/SiO{sub 2} interfaces was estimated in 10{sup 14} traps/cm{sup 2}. The outlined results can open perspectives on the doping properties of As in Si nanocrystals, whose applications in nanoelectronics and optoelectronics are widely investigated (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)
Ruffino, Francesco;
Miritello, Maria;
[1]
Tomasello, Mario Vincenzo;
[2]
De Bastiani, Riccardo;
Grimaldi, Maria Grazia;
[3]
CNR-IMM MATIS, via S. Sofia 64, 95123 Catania (Italy)];
Nicotra, Giuseppe;
Spinella, Corrado
[4]
- CNR-IMM MATIS, via S. Sofia 64, 95123 Catania (Italy)
- Scuola Superiore di Catania, via San Nullo 5/i, 95123 Catania (Italy)
- Dipartimento di Fisica ed Astronomia, Universita di Catania, via S. Sofia 64, 95123 Catania (Italy)
- Consiglio Nazionale delle Ricerche-Istituto per la Microelettronica e Microsistemi (CNR-IMM), VIII Strada 5, 95121 Catania (Italy)
Citation Formats
Ruffino, Francesco, Miritello, Maria, Tomasello, Mario Vincenzo, De Bastiani, Riccardo, Grimaldi, Maria Grazia, CNR-IMM MATIS, via S. Sofia 64, 95123 Catania (Italy)], Nicotra, Giuseppe, and Spinella, Corrado.
Analyses of the As doping of SiO{sub 2}/Si/SiO{sub 2} nanostructures.
Germany: N. p.,
2011.
Web.
doi:10.1002/PSSC.201000044.
Ruffino, Francesco, Miritello, Maria, Tomasello, Mario Vincenzo, De Bastiani, Riccardo, Grimaldi, Maria Grazia, CNR-IMM MATIS, via S. Sofia 64, 95123 Catania (Italy)], Nicotra, Giuseppe, & Spinella, Corrado.
Analyses of the As doping of SiO{sub 2}/Si/SiO{sub 2} nanostructures.
Germany.
https://doi.org/10.1002/PSSC.201000044
Ruffino, Francesco, Miritello, Maria, Tomasello, Mario Vincenzo, De Bastiani, Riccardo, Grimaldi, Maria Grazia, CNR-IMM MATIS, via S. Sofia 64, 95123 Catania (Italy)], Nicotra, Giuseppe, and Spinella, Corrado.
2011.
"Analyses of the As doping of SiO{sub 2}/Si/SiO{sub 2} nanostructures."
Germany.
https://doi.org/10.1002/PSSC.201000044.
@misc{etde_21429868,
title = {Analyses of the As doping of SiO{sub 2}/Si/SiO{sub 2} nanostructures}
author = {Ruffino, Francesco, Miritello, Maria, Tomasello, Mario Vincenzo, De Bastiani, Riccardo, Grimaldi, Maria Grazia, CNR-IMM MATIS, via S. Sofia 64, 95123 Catania (Italy)], Nicotra, Giuseppe, and Spinella, Corrado}
abstractNote = {We illustrate the behaviour of As when it is confined, by the implantation technique, in a SiO{sub 2}(70nm)/Si(30nm)/SiO{sub 2}(70nm) multilayer and its spatial redistribution when annealing processes are performed. By Rutherford backscattering spectrometry and Z-contrast transmission electron microscopy we found an As accumulation at the Si/SiO{sub 2} interfaces and at the Si grain boundaries with no segregation of the As in the Si layer. Such an effect is in agreement with a model that assumes a traps distribution in the Si in the first 2-3 nm above the SiO{sub 2}/Si interfaces and along the Si grain boundaries. The traps concentration at the Si/SiO{sub 2} interfaces was estimated in 10{sup 14} traps/cm{sup 2}. The outlined results can open perspectives on the doping properties of As in Si nanocrystals, whose applications in nanoelectronics and optoelectronics are widely investigated (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)}
doi = {10.1002/PSSC.201000044}
journal = []
issue = {3}
volume = {8}
place = {Germany}
year = {2011}
month = {Mar}
}
title = {Analyses of the As doping of SiO{sub 2}/Si/SiO{sub 2} nanostructures}
author = {Ruffino, Francesco, Miritello, Maria, Tomasello, Mario Vincenzo, De Bastiani, Riccardo, Grimaldi, Maria Grazia, CNR-IMM MATIS, via S. Sofia 64, 95123 Catania (Italy)], Nicotra, Giuseppe, and Spinella, Corrado}
abstractNote = {We illustrate the behaviour of As when it is confined, by the implantation technique, in a SiO{sub 2}(70nm)/Si(30nm)/SiO{sub 2}(70nm) multilayer and its spatial redistribution when annealing processes are performed. By Rutherford backscattering spectrometry and Z-contrast transmission electron microscopy we found an As accumulation at the Si/SiO{sub 2} interfaces and at the Si grain boundaries with no segregation of the As in the Si layer. Such an effect is in agreement with a model that assumes a traps distribution in the Si in the first 2-3 nm above the SiO{sub 2}/Si interfaces and along the Si grain boundaries. The traps concentration at the Si/SiO{sub 2} interfaces was estimated in 10{sup 14} traps/cm{sup 2}. The outlined results can open perspectives on the doping properties of As in Si nanocrystals, whose applications in nanoelectronics and optoelectronics are widely investigated (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)}
doi = {10.1002/PSSC.201000044}
journal = []
issue = {3}
volume = {8}
place = {Germany}
year = {2011}
month = {Mar}
}