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MBE grown InN nanowires: Doping effects of Si and Mg

Abstract

Si and Mg doped InN nanowires (NWs) were grown by plasma assisted molecular beam epitaxy on Si(111) substrates under nitrogen rich conditions. Influence of dopant flux, substrate temperature and In flux were investigated by means of SEM, PL and Raman. We can show that Si doped InN nanowires can be grown at higher substrate temperatures than the undoped once. By carefully choosing growth parameters the fabricated Si doped nanowires can be optimized in terms of morphology yielding to well separate nanowires with high aspect ratio and smooth sidewalls. The growth parameters chosen for the realization of Mg doped nanowires are very similar to that of undoped InN NWs. Photoluminescence measurements on Si doped nanowires show a band filling effect, which indicates a successful n-doping. PL intensity, peak energy and broadening of the peaks are fluctuating by doping with Mg. An intense LO mode in Raman measurements on InN nanowires has been observed. Mg doped NWs show a narrowing of the Raman peaks. A low energy tail emerges for the LO mode upon high doping with Si.
Authors:
Gotschke, Tobias; Limbach, Friederich; Caterino, Roberta; Stoica, Toma; Schaefer-Nolte, Eike Oliver; Calarco, Raffaella; [1]  JARA-Fundamentals of Future Information Technology (Germany)]; Sutter, E [2] 
  1. Institute of Bio- and Nanosystems (IBN-1), Research Centre Juelich GmbH (Germany)
  2. Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York (United States)
Publication Date:
Jul 01, 2010
Product Type:
Journal Article
Resource Relation:
Journal Name: Verhandlungen der Deutschen Physikalischen Gesellschaft; Journal Issue: Regensburg 2010 issue; Conference: DPG Spring meeting 2010 of the condensed matter section with the divisions biological physics, chemical and polymer physics, crystallography, dielectric solids, dynamics and statistical physics, low temperature physics, magnetism, metal and material physics, physics of socio-economic systems, radiation and medical physics, semiconductor physics, surface science, thin films, vacuum science and technology as well as the working group industry and business, with job market, symposia, teachers' days, tutorials, exhibition of scientific instruments and literature, Regensburg (Germany), 21-26 Mar 2010; Other Information: Session: HL 41.4 Mi 11:45; No further information available; Also available as printed version: Verhandlungen der Deutschen Physikalischen Gesellschaft v. 45(3)
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; BAND THEORY; DOPED MATERIALS; ELECTRONIC STRUCTURE; EMISSION SPECTRA; FLUCTUATIONS; INDIUM NITRIDES; LINE BROADENING; MAGNESIUM ADDITIONS; MOLECULAR BEAM EPITAXY; N-TYPE CONDUCTORS; PEAKS; PHONONS; PHOTOLUMINESCENCE; PLASMA; QUANTUM WIRES; RAMAN SPECTRA; SCANNING ELECTRON MICROSCOPY; SILICON; SILICON ADDITIONS; SUBSTRATES; SURFACES; TEMPERATURE DEPENDENCE
OSTI ID:
21429617
Country of Origin:
Germany
Language:
English
Other Identifying Numbers:
Journal ID: ISSN 0420-0195; VDPEAZ; TRN: DE11F6043
Availability:
http://www.dpg-verhandlungen.de
Submitting Site:
DEN
Size:
1 pages
Announcement Date:
Jun 02, 2011

Citation Formats

Gotschke, Tobias, Limbach, Friederich, Caterino, Roberta, Stoica, Toma, Schaefer-Nolte, Eike Oliver, Calarco, Raffaella, JARA-Fundamentals of Future Information Technology (Germany)], and Sutter, E. MBE grown InN nanowires: Doping effects of Si and Mg. Germany: N. p., 2010. Web.
Gotschke, Tobias, Limbach, Friederich, Caterino, Roberta, Stoica, Toma, Schaefer-Nolte, Eike Oliver, Calarco, Raffaella, JARA-Fundamentals of Future Information Technology (Germany)], & Sutter, E. MBE grown InN nanowires: Doping effects of Si and Mg. Germany.
Gotschke, Tobias, Limbach, Friederich, Caterino, Roberta, Stoica, Toma, Schaefer-Nolte, Eike Oliver, Calarco, Raffaella, JARA-Fundamentals of Future Information Technology (Germany)], and Sutter, E. 2010. "MBE grown InN nanowires: Doping effects of Si and Mg." Germany.
@misc{etde_21429617,
title = {MBE grown InN nanowires: Doping effects of Si and Mg}
author = {Gotschke, Tobias, Limbach, Friederich, Caterino, Roberta, Stoica, Toma, Schaefer-Nolte, Eike Oliver, Calarco, Raffaella, JARA-Fundamentals of Future Information Technology (Germany)], and Sutter, E}
abstractNote = {Si and Mg doped InN nanowires (NWs) were grown by plasma assisted molecular beam epitaxy on Si(111) substrates under nitrogen rich conditions. Influence of dopant flux, substrate temperature and In flux were investigated by means of SEM, PL and Raman. We can show that Si doped InN nanowires can be grown at higher substrate temperatures than the undoped once. By carefully choosing growth parameters the fabricated Si doped nanowires can be optimized in terms of morphology yielding to well separate nanowires with high aspect ratio and smooth sidewalls. The growth parameters chosen for the realization of Mg doped nanowires are very similar to that of undoped InN NWs. Photoluminescence measurements on Si doped nanowires show a band filling effect, which indicates a successful n-doping. PL intensity, peak energy and broadening of the peaks are fluctuating by doping with Mg. An intense LO mode in Raman measurements on InN nanowires has been observed. Mg doped NWs show a narrowing of the Raman peaks. A low energy tail emerges for the LO mode upon high doping with Si.}
journal = {Verhandlungen der Deutschen Physikalischen Gesellschaft}
issue = {Regensburg 2010 issue}
place = {Germany}
year = {2010}
month = {Jul}
}