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Vertical and lateral heterostructure of GaN/InGaN within nanowires

Abstract

A vertical and lateral GaN/InGaN heterostructure within a nanowire has been grown by plasma assisted molecular beam epitaxy. The resulting wires have a complex morphology which results from a combination of vertical and lateral heterostructure interfaces. Photoluminescence indicates Indium content in the InGaN alloy of approximately 30 % and evidences in addition a high quality of the GaN nanowire. Raman investigation based on the analysis of the LO peak position and its shape reveal a composition variation between 20 % and 30 %. XRD measurements show a peak with an onset at 17.26 that extends to 16.6 also suggesting a spread in compositions. Transmission electron microscopy analysis indicates composition variations along the wire growth direction. In addition insight is gained about the position of the heterointerfaces. This allows an understanding of the complex shape of the nanowire.
Authors:
Limbach, Friederich; Gotschke, Tobias; Stoica, Toma; Calarco, Raffaella; [1]  JARA-Fundamentals of Future Information Technology (Germany)]; Sutter, E; [2]  Cusco, Ramon; Artus, Luis [3] 
  1. Institute of Bio- and Nanosystems (IBN-1), Research Center Juelich GmbH (Germany)
  2. Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York (United States)
  3. Institut Jaume Almera, Consell Superior d'Investigacions Cientifiques (CSIC), Barcelona, Catalonia (Spain)
Publication Date:
Jul 01, 2010
Product Type:
Journal Article
Resource Relation:
Journal Name: Verhandlungen der Deutschen Physikalischen Gesellschaft; Journal Issue: Regensburg 2010 issue; Conference: DPG Spring meeting 2010 of the condensed matter section with the divisions biological physics, chemical and polymer physics, crystallography, dielectric solids, dynamics and statistical physics, low temperature physics, magnetism, metal and material physics, physics of socio-economic systems, radiation and medical physics, semiconductor physics, surface science, thin films, vacuum science and technology as well as the working group industry and business, with job market, symposia, teachers' days, tutorials, exhibition of scientific instruments and literature, Regensburg (Germany), 21-26 Mar 2010; Other Information: Session: HL 41.3 Mi 11:30; No further information available; Also available as printed version: Verhandlungen der Deutschen Physikalischen Gesellschaft v. 45(3)
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; 36 MATERIALS SCIENCE; CHEMICAL COMPOSITION; GALLIUM NITRIDES; HETEROJUNCTIONS; INDIUM NITRIDES; INTERFACES; MOLECULAR BEAM EPITAXY; MORPHOLOGY; PEAKS; PHOTOLUMINESCENCE; PLASMA; QUANTUM WIRES; RAMAN SPECTRA; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION
OSTI ID:
21429616
Country of Origin:
Germany
Language:
English
Other Identifying Numbers:
Journal ID: ISSN 0420-0195; VDPEAZ; TRN: DE11F6044
Availability:
http://www.dpg-verhandlungen.de
Submitting Site:
DEN
Size:
1 pages
Announcement Date:
Jun 02, 2011

Citation Formats

Limbach, Friederich, Gotschke, Tobias, Stoica, Toma, Calarco, Raffaella, JARA-Fundamentals of Future Information Technology (Germany)], Sutter, E, Cusco, Ramon, and Artus, Luis. Vertical and lateral heterostructure of GaN/InGaN within nanowires. Germany: N. p., 2010. Web.
Limbach, Friederich, Gotschke, Tobias, Stoica, Toma, Calarco, Raffaella, JARA-Fundamentals of Future Information Technology (Germany)], Sutter, E, Cusco, Ramon, & Artus, Luis. Vertical and lateral heterostructure of GaN/InGaN within nanowires. Germany.
Limbach, Friederich, Gotschke, Tobias, Stoica, Toma, Calarco, Raffaella, JARA-Fundamentals of Future Information Technology (Germany)], Sutter, E, Cusco, Ramon, and Artus, Luis. 2010. "Vertical and lateral heterostructure of GaN/InGaN within nanowires." Germany.
@misc{etde_21429616,
title = {Vertical and lateral heterostructure of GaN/InGaN within nanowires}
author = {Limbach, Friederich, Gotschke, Tobias, Stoica, Toma, Calarco, Raffaella, JARA-Fundamentals of Future Information Technology (Germany)], Sutter, E, Cusco, Ramon, and Artus, Luis}
abstractNote = {A vertical and lateral GaN/InGaN heterostructure within a nanowire has been grown by plasma assisted molecular beam epitaxy. The resulting wires have a complex morphology which results from a combination of vertical and lateral heterostructure interfaces. Photoluminescence indicates Indium content in the InGaN alloy of approximately 30 % and evidences in addition a high quality of the GaN nanowire. Raman investigation based on the analysis of the LO peak position and its shape reveal a composition variation between 20 % and 30 %. XRD measurements show a peak with an onset at 17.26 that extends to 16.6 also suggesting a spread in compositions. Transmission electron microscopy analysis indicates composition variations along the wire growth direction. In addition insight is gained about the position of the heterointerfaces. This allows an understanding of the complex shape of the nanowire.}
journal = {Verhandlungen der Deutschen Physikalischen Gesellschaft}
issue = {Regensburg 2010 issue}
place = {Germany}
year = {2010}
month = {Jul}
}