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Selective MBE-growth of GaN nanowires on patterned substrates

Abstract

Self assembled III-nitride nanowires are promising candidates for optoelectronic devices. The precise control of size and position of the nanowires is crucial for further applications. We demonstrate the selective growth of arranged GaN nanowires by plasma-assisted molecular beam epitaxy on an AlN buffer. The position of each nanowire is controlled by a thin silicon oxide mask, patterned by electron beam lithography. The dependence of selectivity and nanowire morphology on the growth parameters and mask properties are investigated. We change the substrate temperature and the Ga-flux, retaining nitrogen rich conditions, which are suitable for self-assembled nanowire growth. Samples with different masks are produced, varying the thickness and the layout. The diameter of the holes and their distance from each other vary across the pattern. We discuss the influence of these parameters on the nanowire growth and morphology.
Authors:
Schumann, Timo; Gotschke, Tobias; Stoica, Toma; Limbach, Friedrich; Calarco, Raffaella; [1]  JARA-Fundamentals of Future Information Technology (Germany)]
  1. Institute of Bio- and Nanosystems (IBN-1), Research Center Juelich GmbH (Germany)
Publication Date:
Jul 01, 2010
Product Type:
Journal Article
Resource Relation:
Journal Name: Verhandlungen der Deutschen Physikalischen Gesellschaft; Journal Issue: Regensburg 2010 issue; Conference: DPG Spring meeting 2010 of the condensed matter section with the divisions biological physics, chemical and polymer physics, crystallography, dielectric solids, dynamics and statistical physics, low temperature physics, magnetism, metal and material physics, physics of socio-economic systems, radiation and medical physics, semiconductor physics, surface science, thin films, vacuum science and technology as well as the working group industry and business, with job market, symposia, teachers' days, tutorials, exhibition of scientific instruments and literature, Regensburg (Germany), 21-26 Mar 2010; Other Information: Session: HL 41.1 Mi 11:00; No further information available; Also available as printed version: Verhandlungen der Deutschen Physikalischen Gesellschaft v. 45(3)
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; 36 MATERIALS SCIENCE; CRYSTAL GROWTH; GALLIUM NITRIDES; MASKING; MOLECULAR BEAM EPITAXY; MORPHOLOGY; PLASMA; QUANTUM WIRES; SUBSTRATES
OSTI ID:
21429614
Country of Origin:
Germany
Language:
English
Other Identifying Numbers:
Journal ID: ISSN 0420-0195; VDPEAZ; TRN: DE11G6046
Availability:
http://www.dpg-verhandlungen.de
Submitting Site:
DE
Size:
1 pages
Announcement Date:
Jun 02, 2011

Citation Formats

Schumann, Timo, Gotschke, Tobias, Stoica, Toma, Limbach, Friedrich, Calarco, Raffaella, and JARA-Fundamentals of Future Information Technology (Germany)]. Selective MBE-growth of GaN nanowires on patterned substrates. Germany: N. p., 2010. Web.
Schumann, Timo, Gotschke, Tobias, Stoica, Toma, Limbach, Friedrich, Calarco, Raffaella, & JARA-Fundamentals of Future Information Technology (Germany)]. Selective MBE-growth of GaN nanowires on patterned substrates. Germany.
Schumann, Timo, Gotschke, Tobias, Stoica, Toma, Limbach, Friedrich, Calarco, Raffaella, and JARA-Fundamentals of Future Information Technology (Germany)]. 2010. "Selective MBE-growth of GaN nanowires on patterned substrates." Germany.
@misc{etde_21429614,
title = {Selective MBE-growth of GaN nanowires on patterned substrates}
author = {Schumann, Timo, Gotschke, Tobias, Stoica, Toma, Limbach, Friedrich, Calarco, Raffaella, and JARA-Fundamentals of Future Information Technology (Germany)]}
abstractNote = {Self assembled III-nitride nanowires are promising candidates for optoelectronic devices. The precise control of size and position of the nanowires is crucial for further applications. We demonstrate the selective growth of arranged GaN nanowires by plasma-assisted molecular beam epitaxy on an AlN buffer. The position of each nanowire is controlled by a thin silicon oxide mask, patterned by electron beam lithography. The dependence of selectivity and nanowire morphology on the growth parameters and mask properties are investigated. We change the substrate temperature and the Ga-flux, retaining nitrogen rich conditions, which are suitable for self-assembled nanowire growth. Samples with different masks are produced, varying the thickness and the layout. The diameter of the holes and their distance from each other vary across the pattern. We discuss the influence of these parameters on the nanowire growth and morphology.}
journal = {Verhandlungen der Deutschen Physikalischen Gesellschaft}
issue = {Regensburg 2010 issue}
place = {Germany}
year = {2010}
month = {Jul}
}