Abstract
III-V compounds nanowires (NWs) are of central interest due to their innovative physical properties and potential applications in electronic and photo-electronic devices. Freestanding AlGaAs NWs were grown by MOVPE by the Vapor Liquid Solid method along the (111) direction on GaAs(111) substrates. Raman measurements were performed on single as-grown NWs with a scanning confocal micro-Raman spectrometer. Rayleigh imaging, was applied to locate individual NWs and define their position for Raman measurements. The spectra of the AlGaAs NWs exhibit two-mode behavior: GaAs- and AlAs-like modes which were exploited to determine the stoichiometry. Its dependence on the growth temperature was determined. The Raman spectra show two sets of GaAs- and AlAs-like modes indicating regions with different stoichiometries within a single NW. The composition gradient oft the NWs can be understood as the unintentional formation of a core-shell structure. Furthermore, the presence of coupled plasmon-LO phonon peaks in the spectra was related to (unintentional) doping of the NWs.
Buick, Benjamin;
Richter, Wolfgang;
[1]
Speiser, Eugen;
[1]
ISAS Department Berlin, Berlin (Germany)];
Prete, Paola;
[2]
Paiano, Pasquale;
Lovergine, Nicola;
[3]
Universita del Salento, Lecce (Italy)]
- Universita di Roma Tor Vergata, Rome (Italy)
- IMM-CNR di Lecce, Lecce (Italy)
- CNISM di Lecce (Italy)
Citation Formats
Buick, Benjamin, Richter, Wolfgang, Speiser, Eugen, ISAS Department Berlin, Berlin (Germany)], Prete, Paola, Paiano, Pasquale, Lovergine, Nicola, and Universita del Salento, Lecce (Italy)].
Single As-grown Al{sub x}Ga{sub 1-x}As nanowires probed by raman spectroscopy.
Germany: N. p.,
2010.
Web.
Buick, Benjamin, Richter, Wolfgang, Speiser, Eugen, ISAS Department Berlin, Berlin (Germany)], Prete, Paola, Paiano, Pasquale, Lovergine, Nicola, & Universita del Salento, Lecce (Italy)].
Single As-grown Al{sub x}Ga{sub 1-x}As nanowires probed by raman spectroscopy.
Germany.
Buick, Benjamin, Richter, Wolfgang, Speiser, Eugen, ISAS Department Berlin, Berlin (Germany)], Prete, Paola, Paiano, Pasquale, Lovergine, Nicola, and Universita del Salento, Lecce (Italy)].
2010.
"Single As-grown Al{sub x}Ga{sub 1-x}As nanowires probed by raman spectroscopy."
Germany.
@misc{etde_21429590,
title = {Single As-grown Al{sub x}Ga{sub 1-x}As nanowires probed by raman spectroscopy}
author = {Buick, Benjamin, Richter, Wolfgang, Speiser, Eugen, ISAS Department Berlin, Berlin (Germany)], Prete, Paola, Paiano, Pasquale, Lovergine, Nicola, and Universita del Salento, Lecce (Italy)]}
abstractNote = {III-V compounds nanowires (NWs) are of central interest due to their innovative physical properties and potential applications in electronic and photo-electronic devices. Freestanding AlGaAs NWs were grown by MOVPE by the Vapor Liquid Solid method along the (111) direction on GaAs(111) substrates. Raman measurements were performed on single as-grown NWs with a scanning confocal micro-Raman spectrometer. Rayleigh imaging, was applied to locate individual NWs and define their position for Raman measurements. The spectra of the AlGaAs NWs exhibit two-mode behavior: GaAs- and AlAs-like modes which were exploited to determine the stoichiometry. Its dependence on the growth temperature was determined. The Raman spectra show two sets of GaAs- and AlAs-like modes indicating regions with different stoichiometries within a single NW. The composition gradient oft the NWs can be understood as the unintentional formation of a core-shell structure. Furthermore, the presence of coupled plasmon-LO phonon peaks in the spectra was related to (unintentional) doping of the NWs.}
journal = []
issue = {Regensburg 2010 issue}
place = {Germany}
year = {2010}
month = {Jul}
}
title = {Single As-grown Al{sub x}Ga{sub 1-x}As nanowires probed by raman spectroscopy}
author = {Buick, Benjamin, Richter, Wolfgang, Speiser, Eugen, ISAS Department Berlin, Berlin (Germany)], Prete, Paola, Paiano, Pasquale, Lovergine, Nicola, and Universita del Salento, Lecce (Italy)]}
abstractNote = {III-V compounds nanowires (NWs) are of central interest due to their innovative physical properties and potential applications in electronic and photo-electronic devices. Freestanding AlGaAs NWs were grown by MOVPE by the Vapor Liquid Solid method along the (111) direction on GaAs(111) substrates. Raman measurements were performed on single as-grown NWs with a scanning confocal micro-Raman spectrometer. Rayleigh imaging, was applied to locate individual NWs and define their position for Raman measurements. The spectra of the AlGaAs NWs exhibit two-mode behavior: GaAs- and AlAs-like modes which were exploited to determine the stoichiometry. Its dependence on the growth temperature was determined. The Raman spectra show two sets of GaAs- and AlAs-like modes indicating regions with different stoichiometries within a single NW. The composition gradient oft the NWs can be understood as the unintentional formation of a core-shell structure. Furthermore, the presence of coupled plasmon-LO phonon peaks in the spectra was related to (unintentional) doping of the NWs.}
journal = []
issue = {Regensburg 2010 issue}
place = {Germany}
year = {2010}
month = {Jul}
}