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Mg-doped GaN nanowires: Their optical and morphological properties

Abstract

High crystal quality GaN nanowires doped by Mg were obtained using plasma assisted molecular beam epitaxy growth in N-rich conditions. The influence of the growth temperature on the morphology, structural and optical properties of NW growth is studied. An additional Mg flux increases the tendency of the wires to coalesce. The morphology of the doped wires with respect to their undoped counterpart is otherwise not changed. With decreasing substrate temperature the NW density decreases, at the same time the coalescence is enhanced. The samples have been investigated by means of photoluminescence (PL) as well as Raman spectroscopy. By increasing the Mg doping and reducing the deposition temperature, the ultra violet (UV) luminescence band due to Mg doping increases with respect to the near band edge emission. In addition the dominance of D{sup 0}X{sub A} emission of the near band edge peak is diminished and an increased contribution of the A{sup 0}X{sub A} can be observed. Raman spectroscopy indicates that there is no significant degradation in material quality due to Mg supply during growth.
Authors:
Limbach, Friederich; Stoica, Toma; Caterino, Roberta; Schaefer-Nolte, Eike Oliver; Gotschke, Tobias; Calarco, Raffaella; [1]  JARA-Fundamentals of Future Information Technology (Germany)]; Sutter, Eli [2] 
  1. Institute of Bio- and Nanosystems (IBN-1), Research Centre Juelich GmbH (Germany)
  2. Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York (United States)
Publication Date:
Jul 01, 2010
Product Type:
Journal Article
Resource Relation:
Journal Name: Verhandlungen der Deutschen Physikalischen Gesellschaft; Journal Issue: Regensburg 2010 issue; Conference: DPG Spring meeting 2010 of the condensed matter section with the divisions biological physics, chemical and polymer physics, crystallography, dielectric solids, dynamics and statistical physics, low temperature physics, magnetism, metal and material physics, physics of socio-economic systems, radiation and medical physics, semiconductor physics, surface science, thin films, vacuum science and technology as well as the working group industry and business, with job market, symposia, teachers' days, tutorials, exhibition of scientific instruments and literature, Regensburg (Germany), 21-26 Mar 2010; Other Information: Session: HL 31.16 Di 18:30; No further information available; Also available as printed version: Verhandlungen der Deutschen Physikalischen Gesellschaft v. 45(3)
Subject:
36 MATERIALS SCIENCE; COALESCENCE; CRYSTAL DOPING; DENSITY; DOPED MATERIALS; EMISSION SPECTRA; GALLIUM NITRIDES; MAGNESIUM ADDITIONS; MOLECULAR BEAM EPITAXY; MORPHOLOGY; PHOTOLUMINESCENCE; PLASMA; QUANTUM WIRES; RAMAN SPECTRA; TEMPERATURE DEPENDENCE; ULTRAVIOLET SPECTRA
OSTI ID:
21429484
Country of Origin:
Germany
Language:
English
Other Identifying Numbers:
Journal ID: ISSN 0420-0195; VDPEAZ; TRN: DE11G6176
Availability:
http://www.dpg-verhandlungen.de
Submitting Site:
DE
Size:
1 pages
Announcement Date:
Jun 02, 2011

Citation Formats

Limbach, Friederich, Stoica, Toma, Caterino, Roberta, Schaefer-Nolte, Eike Oliver, Gotschke, Tobias, Calarco, Raffaella, JARA-Fundamentals of Future Information Technology (Germany)], and Sutter, Eli. Mg-doped GaN nanowires: Their optical and morphological properties. Germany: N. p., 2010. Web.
Limbach, Friederich, Stoica, Toma, Caterino, Roberta, Schaefer-Nolte, Eike Oliver, Gotschke, Tobias, Calarco, Raffaella, JARA-Fundamentals of Future Information Technology (Germany)], & Sutter, Eli. Mg-doped GaN nanowires: Their optical and morphological properties. Germany.
Limbach, Friederich, Stoica, Toma, Caterino, Roberta, Schaefer-Nolte, Eike Oliver, Gotschke, Tobias, Calarco, Raffaella, JARA-Fundamentals of Future Information Technology (Germany)], and Sutter, Eli. 2010. "Mg-doped GaN nanowires: Their optical and morphological properties." Germany.
@misc{etde_21429484,
title = {Mg-doped GaN nanowires: Their optical and morphological properties}
author = {Limbach, Friederich, Stoica, Toma, Caterino, Roberta, Schaefer-Nolte, Eike Oliver, Gotschke, Tobias, Calarco, Raffaella, JARA-Fundamentals of Future Information Technology (Germany)], and Sutter, Eli}
abstractNote = {High crystal quality GaN nanowires doped by Mg were obtained using plasma assisted molecular beam epitaxy growth in N-rich conditions. The influence of the growth temperature on the morphology, structural and optical properties of NW growth is studied. An additional Mg flux increases the tendency of the wires to coalesce. The morphology of the doped wires with respect to their undoped counterpart is otherwise not changed. With decreasing substrate temperature the NW density decreases, at the same time the coalescence is enhanced. The samples have been investigated by means of photoluminescence (PL) as well as Raman spectroscopy. By increasing the Mg doping and reducing the deposition temperature, the ultra violet (UV) luminescence band due to Mg doping increases with respect to the near band edge emission. In addition the dominance of D{sup 0}X{sub A} emission of the near band edge peak is diminished and an increased contribution of the A{sup 0}X{sub A} can be observed. Raman spectroscopy indicates that there is no significant degradation in material quality due to Mg supply during growth.}
journal = {Verhandlungen der Deutschen Physikalischen Gesellschaft}
issue = {Regensburg 2010 issue}
place = {Germany}
year = {2010}
month = {Jul}
}