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Electrical characterization of metal contacts on p-doped galliumnitride nanowires

Abstract

GaN nanowires as a group III-nitride semiconductor offer an interesting potential for optoelectronics and nano-electronics devices running at ambient temperatures. We report on recent investigations on the realization of electric contacts on p-doped GaN nanowires. After growth of the NW by molecular beam epitaxy with in situ Magnesium doping we define individual metal source-drain electrodes by electron-beam lithography. We study the characteristics of different metal contact material combinations. The fabricated contacts and the influence of rapid thermal annealing steps are characterized by IV-measurements at room temperature. We find that Ti/Au contacts commonly used for n-type GaN exhibit poor contact properties in contrast to combinations using Ag or Pd to contact the wire.
Authors:
Kinzel, Joerg; Nawaz, Ahsan; Krenner, Hubert; [1]  Ebbecke, Jens; [2]  Calarco, Raffaella; Stoica, Toma; [3]  Wixforth, Achim; [1]  Center for NanoScience, Ludwig-Maximilians-Universitaet, Muenchen (Germany)]
  1. Lehrstuhl fuer Experimentalphysik 1, Universitaet Augsburg (Germany)
  2. NanoSYD - Mads Clausen Institute, University of Southern Denmark, Soenderborg (Denmark)
  3. Institute of Bio- and Nanosystems (IBN-1), Research Centre Juelich GmbH (Germany)
Publication Date:
Jul 01, 2010
Product Type:
Journal Article
Resource Relation:
Journal Name: Verhandlungen der Deutschen Physikalischen Gesellschaft; Journal Issue: Regensburg 2010 issue; Conference: DPG Spring meeting 2010 of the condensed matter section with the divisions biological physics, chemical and polymer physics, crystallography, dielectric solids, dynamics and statistical physics, low temperature physics, magnetism, metal and material physics, physics of socio-economic systems, radiation and medical physics, semiconductor physics, surface science, thin films, vacuum science and technology as well as the working group industry and business, with job market, symposia, teachers' days, tutorials, exhibition of scientific instruments and literature, Regensburg (Germany), 21-26 Mar 2010; Other Information: Session: HL 31.13 Di 18:30; No further information available; Also available as printed version: Verhandlungen der Deutschen Physikalischen Gesellschaft v. 45(3)
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; 36 MATERIALS SCIENCE; ANNEALING; COMPARATIVE EVALUATIONS; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRIC CONTACTS; ELECTRODES; GALLIUM NITRIDES; GOLD; MAGNESIUM ADDITIONS; MOLECULAR BEAM EPITAXY; P-TYPE CONDUCTORS; PALLADIUM; QUANTUM WIRES; SILVER; TEMPERATURE RANGE 0273-0400 K; TITANIUM
OSTI ID:
21429482
Country of Origin:
Germany
Language:
English
Other Identifying Numbers:
Journal ID: ISSN 0420-0195; VDPEAZ; TRN: DE11G6178
Availability:
http://www.dpg-verhandlungen.de
Submitting Site:
DE
Size:
1 pages
Announcement Date:
Jun 02, 2011

Citation Formats

Kinzel, Joerg, Nawaz, Ahsan, Krenner, Hubert, Ebbecke, Jens, Calarco, Raffaella, Stoica, Toma, Wixforth, Achim, and Center for NanoScience, Ludwig-Maximilians-Universitaet, Muenchen (Germany)]. Electrical characterization of metal contacts on p-doped galliumnitride nanowires. Germany: N. p., 2010. Web.
Kinzel, Joerg, Nawaz, Ahsan, Krenner, Hubert, Ebbecke, Jens, Calarco, Raffaella, Stoica, Toma, Wixforth, Achim, & Center for NanoScience, Ludwig-Maximilians-Universitaet, Muenchen (Germany)]. Electrical characterization of metal contacts on p-doped galliumnitride nanowires. Germany.
Kinzel, Joerg, Nawaz, Ahsan, Krenner, Hubert, Ebbecke, Jens, Calarco, Raffaella, Stoica, Toma, Wixforth, Achim, and Center for NanoScience, Ludwig-Maximilians-Universitaet, Muenchen (Germany)]. 2010. "Electrical characterization of metal contacts on p-doped galliumnitride nanowires." Germany.
@misc{etde_21429482,
title = {Electrical characterization of metal contacts on p-doped galliumnitride nanowires}
author = {Kinzel, Joerg, Nawaz, Ahsan, Krenner, Hubert, Ebbecke, Jens, Calarco, Raffaella, Stoica, Toma, Wixforth, Achim, and Center for NanoScience, Ludwig-Maximilians-Universitaet, Muenchen (Germany)]}
abstractNote = {GaN nanowires as a group III-nitride semiconductor offer an interesting potential for optoelectronics and nano-electronics devices running at ambient temperatures. We report on recent investigations on the realization of electric contacts on p-doped GaN nanowires. After growth of the NW by molecular beam epitaxy with in situ Magnesium doping we define individual metal source-drain electrodes by electron-beam lithography. We study the characteristics of different metal contact material combinations. The fabricated contacts and the influence of rapid thermal annealing steps are characterized by IV-measurements at room temperature. We find that Ti/Au contacts commonly used for n-type GaN exhibit poor contact properties in contrast to combinations using Ag or Pd to contact the wire.}
journal = {Verhandlungen der Deutschen Physikalischen Gesellschaft}
issue = {Regensburg 2010 issue}
place = {Germany}
year = {2010}
month = {Jul}
}