Abstract
We have investigated the pentacene based Organic Thin Film Transistors (OTFTs) with high-k dielectric Nd{sub 2}O{sub 3}. Use of high dielectric constant (high-k) gate insulator Nd{sub 2}O{sub 3} reduces the threshold voltage and sub threshold swing of the OTFTs. The calculated threshold voltage -2.2V and sub-threshold swing 1V/decade, current ON-OFF ratio is 1.7 X 10{sup 4} and mobility is 0.13cm{sup 2}/V.s. Pentacene film is deposited on Nd{sub 2}O{sub 3} surface using two step deposition method. Deposited pentacene film is found poly crystalline in nature. (author)
Sarma, R;
Saikia, D;
[1]
Saikia, Puja;
Saikia, P K;
Baishya, B
[2]
- J B College, Jorhat, Assam (India). Dept. of Physics. Thin Film Lab.
- Dibrugarh University, Dibrugarh, Assam (India)
Citation Formats
Sarma, R, Saikia, D, Saikia, Puja, Saikia, P K, and Baishya, B.
Pentacene based thin film transistors with high-k dielectric Nd{sub 2}O{sub 3} as a gate insulator.
Brazil: N. p.,
2010.
Web.
doi:10.1590/S0103-97332010000300019.
Sarma, R, Saikia, D, Saikia, Puja, Saikia, P K, & Baishya, B.
Pentacene based thin film transistors with high-k dielectric Nd{sub 2}O{sub 3} as a gate insulator.
Brazil.
https://doi.org/10.1590/S0103-97332010000300019
Sarma, R, Saikia, D, Saikia, Puja, Saikia, P K, and Baishya, B.
2010.
"Pentacene based thin film transistors with high-k dielectric Nd{sub 2}O{sub 3} as a gate insulator."
Brazil.
https://doi.org/10.1590/S0103-97332010000300019.
@misc{etde_21397731,
title = {Pentacene based thin film transistors with high-k dielectric Nd{sub 2}O{sub 3} as a gate insulator}
author = {Sarma, R, Saikia, D, Saikia, Puja, Saikia, P K, and Baishya, B}
abstractNote = {We have investigated the pentacene based Organic Thin Film Transistors (OTFTs) with high-k dielectric Nd{sub 2}O{sub 3}. Use of high dielectric constant (high-k) gate insulator Nd{sub 2}O{sub 3} reduces the threshold voltage and sub threshold swing of the OTFTs. The calculated threshold voltage -2.2V and sub-threshold swing 1V/decade, current ON-OFF ratio is 1.7 X 10{sup 4} and mobility is 0.13cm{sup 2}/V.s. Pentacene film is deposited on Nd{sub 2}O{sub 3} surface using two step deposition method. Deposited pentacene film is found poly crystalline in nature. (author)}
doi = {10.1590/S0103-97332010000300019}
journal = []
issue = {3}
volume = {40}
place = {Brazil}
year = {2010}
month = {Sep}
}
title = {Pentacene based thin film transistors with high-k dielectric Nd{sub 2}O{sub 3} as a gate insulator}
author = {Sarma, R, Saikia, D, Saikia, Puja, Saikia, P K, and Baishya, B}
abstractNote = {We have investigated the pentacene based Organic Thin Film Transistors (OTFTs) with high-k dielectric Nd{sub 2}O{sub 3}. Use of high dielectric constant (high-k) gate insulator Nd{sub 2}O{sub 3} reduces the threshold voltage and sub threshold swing of the OTFTs. The calculated threshold voltage -2.2V and sub-threshold swing 1V/decade, current ON-OFF ratio is 1.7 X 10{sup 4} and mobility is 0.13cm{sup 2}/V.s. Pentacene film is deposited on Nd{sub 2}O{sub 3} surface using two step deposition method. Deposited pentacene film is found poly crystalline in nature. (author)}
doi = {10.1590/S0103-97332010000300019}
journal = []
issue = {3}
volume = {40}
place = {Brazil}
year = {2010}
month = {Sep}
}