Abstract
Hafnium oxynitride (HfO{sub x}N{sub y}) films were fabricated by sputtering a HfO{sub 2} target with different nitrogen flow ratios f(N{sub 2}) of 0 approx50%, and air annealed in the 500-1000 deg. C range. The crystallization temperature of HfO{sub 2} increased from 500 deg. C to 700 deg. C through nitrogen incorporation. Spectrophotometric measurements show that a linear alpha(E){sup 1/2} versus E dependence at E > 6.1 eV due to indirect-band transitions can be observed in as-deposited and annealed films while a 'saturated' band of 5.9 eV <= E <= 6.1 eV in alpha(E) existed in as-deposited films with f(N{sub 2}) = 0 and 7%. This band can be suppressed in the films with f(N{sub 2}) >= 30% when annealing temperature is below 600 deg. C.
Longyan, Yuan;
Guojia, Fang;
Hai, Zhou;
Chang, Liu;
Xingzhong, Zhao;
[1]
Gao Yihua, E-mail: gjfang@whu.edu.c
[2]
- Key Lab of Acoustic and Photonic Materials and Devices of Ministry of Education, Department of Electronic Science and Technology, School of Physical Science and Technology, Wuhan University, Wuhan 430072 (China)
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074 (China)
Citation Formats
Longyan, Yuan, Guojia, Fang, Hai, Zhou, Chang, Liu, Xingzhong, Zhao, and Gao Yihua, E-mail: gjfang@whu.edu.c.
Suppression of near-edge optical absorption band in sputter deposited hafnium oxynitride via nitrogen incorporation and annealing.
United Kingdom: N. p.,
2009.
Web.
doi:10.1088/0022-3727/42/14/145302.
Longyan, Yuan, Guojia, Fang, Hai, Zhou, Chang, Liu, Xingzhong, Zhao, & Gao Yihua, E-mail: gjfang@whu.edu.c.
Suppression of near-edge optical absorption band in sputter deposited hafnium oxynitride via nitrogen incorporation and annealing.
United Kingdom.
https://doi.org/10.1088/0022-3727/42/14/145302
Longyan, Yuan, Guojia, Fang, Hai, Zhou, Chang, Liu, Xingzhong, Zhao, and Gao Yihua, E-mail: gjfang@whu.edu.c.
2009.
"Suppression of near-edge optical absorption band in sputter deposited hafnium oxynitride via nitrogen incorporation and annealing."
United Kingdom.
https://doi.org/10.1088/0022-3727/42/14/145302.
@misc{etde_21391978,
title = {Suppression of near-edge optical absorption band in sputter deposited hafnium oxynitride via nitrogen incorporation and annealing}
author = {Longyan, Yuan, Guojia, Fang, Hai, Zhou, Chang, Liu, Xingzhong, Zhao, and Gao Yihua, E-mail: gjfang@whu.edu.c}
abstractNote = {Hafnium oxynitride (HfO{sub x}N{sub y}) films were fabricated by sputtering a HfO{sub 2} target with different nitrogen flow ratios f(N{sub 2}) of 0 approx50%, and air annealed in the 500-1000 deg. C range. The crystallization temperature of HfO{sub 2} increased from 500 deg. C to 700 deg. C through nitrogen incorporation. Spectrophotometric measurements show that a linear alpha(E){sup 1/2} versus E dependence at E > 6.1 eV due to indirect-band transitions can be observed in as-deposited and annealed films while a 'saturated' band of 5.9 eV <= E <= 6.1 eV in alpha(E) existed in as-deposited films with f(N{sub 2}) = 0 and 7%. This band can be suppressed in the films with f(N{sub 2}) >= 30% when annealing temperature is below 600 deg. C.}
doi = {10.1088/0022-3727/42/14/145302}
journal = []
issue = {14}
volume = {42}
place = {United Kingdom}
year = {2009}
month = {Jul}
}
title = {Suppression of near-edge optical absorption band in sputter deposited hafnium oxynitride via nitrogen incorporation and annealing}
author = {Longyan, Yuan, Guojia, Fang, Hai, Zhou, Chang, Liu, Xingzhong, Zhao, and Gao Yihua, E-mail: gjfang@whu.edu.c}
abstractNote = {Hafnium oxynitride (HfO{sub x}N{sub y}) films were fabricated by sputtering a HfO{sub 2} target with different nitrogen flow ratios f(N{sub 2}) of 0 approx50%, and air annealed in the 500-1000 deg. C range. The crystallization temperature of HfO{sub 2} increased from 500 deg. C to 700 deg. C through nitrogen incorporation. Spectrophotometric measurements show that a linear alpha(E){sup 1/2} versus E dependence at E > 6.1 eV due to indirect-band transitions can be observed in as-deposited and annealed films while a 'saturated' band of 5.9 eV <= E <= 6.1 eV in alpha(E) existed in as-deposited films with f(N{sub 2}) = 0 and 7%. This band can be suppressed in the films with f(N{sub 2}) >= 30% when annealing temperature is below 600 deg. C.}
doi = {10.1088/0022-3727/42/14/145302}
journal = []
issue = {14}
volume = {42}
place = {United Kingdom}
year = {2009}
month = {Jul}
}