Abstract
The stoichiometry of single ternary III-V semiconductor nanowires was analyzed by Raman spectroscopy. Free-standing Al{sub x}Ga{sub 1-x}As nanowires were obtained through metal organic vapor phase epitaxy (MOVPE) by the vapor liquid solid (VLS) mechanism on GaAs substrates. The as-grown nanowires were studied with a scanning confocal Raman spectrometer (spatial resolution {approx}300 nm). They were located by Rayleigh imaging and individual nanowires selected for Raman spectroscopy. The acquired spectra exhibit 2-mode behavior. The stoichiometry of single nanowires was determined based on the frequencies of the GaAs- and AlAs-like transversal optical (TO) and longitudinal optical (LO) peaks with an accuracy of below 10%. Measurements at different positions along the axis revealed variations of the composition within single nanowires. This non-uniformity evidences that the nanowires possess an internal structure. (Abstract Copyright [2010], Wiley Periodicals, Inc.)
Buick, Benjamin;
Richter, Wolfgang;
[1]
Speiser, Eugen;
[2]
Prete, Paola;
[3]
Paiano, Pasquale;
Lovergine, Nicola;
[4]
Dipartimento di Ingegneria dell'Innovazione, Universita del Salento, Lecce (Italy)]
- Dipartimento di Fisica, Universita di Roma Tor Vergata, Roma (Italy)
- ISAS, Institute for Analytical Sciences Department Berlin (Germany)
- IMM-CNR, Lecce Research Unit, Lecce (Italy)
- CNISM, Unita di Ricerca di Lecce (Italy)
Citation Formats
Buick, Benjamin, Richter, Wolfgang, Speiser, Eugen, Prete, Paola, Paiano, Pasquale, Lovergine, Nicola, and Dipartimento di Ingegneria dell'Innovazione, Universita del Salento, Lecce (Italy)].
Single Al{sub x}Ga{sub 1-x}As nanowires probed by Raman spectroscopy.
Germany: N. p.,
2010.
Web.
doi:10.1002/PSSB.200983948.
Buick, Benjamin, Richter, Wolfgang, Speiser, Eugen, Prete, Paola, Paiano, Pasquale, Lovergine, Nicola, & Dipartimento di Ingegneria dell'Innovazione, Universita del Salento, Lecce (Italy)].
Single Al{sub x}Ga{sub 1-x}As nanowires probed by Raman spectroscopy.
Germany.
https://doi.org/10.1002/PSSB.200983948
Buick, Benjamin, Richter, Wolfgang, Speiser, Eugen, Prete, Paola, Paiano, Pasquale, Lovergine, Nicola, and Dipartimento di Ingegneria dell'Innovazione, Universita del Salento, Lecce (Italy)].
2010.
"Single Al{sub x}Ga{sub 1-x}As nanowires probed by Raman spectroscopy."
Germany.
https://doi.org/10.1002/PSSB.200983948.
@misc{etde_21339138,
title = {Single Al{sub x}Ga{sub 1-x}As nanowires probed by Raman spectroscopy}
author = {Buick, Benjamin, Richter, Wolfgang, Speiser, Eugen, Prete, Paola, Paiano, Pasquale, Lovergine, Nicola, and Dipartimento di Ingegneria dell'Innovazione, Universita del Salento, Lecce (Italy)]}
abstractNote = {The stoichiometry of single ternary III-V semiconductor nanowires was analyzed by Raman spectroscopy. Free-standing Al{sub x}Ga{sub 1-x}As nanowires were obtained through metal organic vapor phase epitaxy (MOVPE) by the vapor liquid solid (VLS) mechanism on GaAs substrates. The as-grown nanowires were studied with a scanning confocal Raman spectrometer (spatial resolution {approx}300 nm). They were located by Rayleigh imaging and individual nanowires selected for Raman spectroscopy. The acquired spectra exhibit 2-mode behavior. The stoichiometry of single nanowires was determined based on the frequencies of the GaAs- and AlAs-like transversal optical (TO) and longitudinal optical (LO) peaks with an accuracy of below 10%. Measurements at different positions along the axis revealed variations of the composition within single nanowires. This non-uniformity evidences that the nanowires possess an internal structure. (Abstract Copyright [2010], Wiley Periodicals, Inc.)}
doi = {10.1002/PSSB.200983948}
journal = []
issue = {8}
volume = {247}
place = {Germany}
year = {2010}
month = {Aug}
}
title = {Single Al{sub x}Ga{sub 1-x}As nanowires probed by Raman spectroscopy}
author = {Buick, Benjamin, Richter, Wolfgang, Speiser, Eugen, Prete, Paola, Paiano, Pasquale, Lovergine, Nicola, and Dipartimento di Ingegneria dell'Innovazione, Universita del Salento, Lecce (Italy)]}
abstractNote = {The stoichiometry of single ternary III-V semiconductor nanowires was analyzed by Raman spectroscopy. Free-standing Al{sub x}Ga{sub 1-x}As nanowires were obtained through metal organic vapor phase epitaxy (MOVPE) by the vapor liquid solid (VLS) mechanism on GaAs substrates. The as-grown nanowires were studied with a scanning confocal Raman spectrometer (spatial resolution {approx}300 nm). They were located by Rayleigh imaging and individual nanowires selected for Raman spectroscopy. The acquired spectra exhibit 2-mode behavior. The stoichiometry of single nanowires was determined based on the frequencies of the GaAs- and AlAs-like transversal optical (TO) and longitudinal optical (LO) peaks with an accuracy of below 10%. Measurements at different positions along the axis revealed variations of the composition within single nanowires. This non-uniformity evidences that the nanowires possess an internal structure. (Abstract Copyright [2010], Wiley Periodicals, Inc.)}
doi = {10.1002/PSSB.200983948}
journal = []
issue = {8}
volume = {247}
place = {Germany}
year = {2010}
month = {Aug}
}