You need JavaScript to view this

Nanostructured broadband antireflection coatings on AlInP fabricated by nanoimprint lithography

Abstract

We report the fabrication of moth-eye antireflection nanostructures on AlInP compound commonly used as a window layer in high-efficiency multijunction solar cells. The broadband antireflective nanostructures were fabricated by nanoimprint lithography directly on molecular beam epitaxy grown AlInP/GaAs surface. At normal incidence, the structures exhibited an average reflectivity of 2.7% measured in a spectral range 450-1650 nm. Photoluminescence measurements of the emission from GaAs substrate suggest that the optical losses associated with the moth-eye pattern are low. Nanoimprint lithography offers a cost-effective approach to fabricate broadband antireflection coatings required in III-V high-efficiency multijunction solar cells. (author)
Authors:
Tommila, J; Polojaervi, V; Aho, A; Tukiainen, A; Viheriaelae, J; Salmi, J; Schramm, A; Kontio, J M; Turtiainen, A; Niemi, T; Guina, M [1] 
  1. Optoelectronics Research Centre, Tampere University of Technology, Korkeakoulunkatu 3, 33720, Tampere, P.O. Box 692, 33101 Tampere (Finland)
Publication Date:
Oct 15, 2010
Product Type:
Journal Article
Resource Relation:
Journal Name: Solar Energy Materials and Solar Cells; Journal Volume: 94; Journal Issue: 10; Other Information: Elsevier Ltd. All rights reserved
Subject:
14 SOLAR ENERGY; SOLAR CELLS; PHOTOLUMINESCENCE; ANTIREFLECTION COATINGS; GALLIUM ARSENIDES; MOLECULAR BEAM EPITAXY; NANOSTRUCTURES; REFLECTIVITY; EFFICIENCY; Nanoimprint lithography; Multijunction photovoltaic cell; Antireflection coating; Moth-eye
OSTI ID:
21338211
Country of Origin:
Netherlands
Language:
English
Other Identifying Numbers:
Journal ID: ISSN 0927-0248; SEMCEQ; TRN: NL10V4494
Availability:
Available from: http://dx.doi.org/10.1016/j.solmat.2010.05.053
Submitting Site:
ECN
Size:
page(s) 1845-1848
Announcement Date:
Oct 07, 2010

Citation Formats

Tommila, J, Polojaervi, V, Aho, A, Tukiainen, A, Viheriaelae, J, Salmi, J, Schramm, A, Kontio, J M, Turtiainen, A, Niemi, T, and Guina, M. Nanostructured broadband antireflection coatings on AlInP fabricated by nanoimprint lithography. Netherlands: N. p., 2010. Web. doi:10.1016/J.SOLMAT.2010.05.053.
Tommila, J, Polojaervi, V, Aho, A, Tukiainen, A, Viheriaelae, J, Salmi, J, Schramm, A, Kontio, J M, Turtiainen, A, Niemi, T, & Guina, M. Nanostructured broadband antireflection coatings on AlInP fabricated by nanoimprint lithography. Netherlands. https://doi.org/10.1016/J.SOLMAT.2010.05.053
Tommila, J, Polojaervi, V, Aho, A, Tukiainen, A, Viheriaelae, J, Salmi, J, Schramm, A, Kontio, J M, Turtiainen, A, Niemi, T, and Guina, M. 2010. "Nanostructured broadband antireflection coatings on AlInP fabricated by nanoimprint lithography." Netherlands. https://doi.org/10.1016/J.SOLMAT.2010.05.053.
@misc{etde_21338211,
title = {Nanostructured broadband antireflection coatings on AlInP fabricated by nanoimprint lithography}
author = {Tommila, J, Polojaervi, V, Aho, A, Tukiainen, A, Viheriaelae, J, Salmi, J, Schramm, A, Kontio, J M, Turtiainen, A, Niemi, T, and Guina, M}
abstractNote = {We report the fabrication of moth-eye antireflection nanostructures on AlInP compound commonly used as a window layer in high-efficiency multijunction solar cells. The broadband antireflective nanostructures were fabricated by nanoimprint lithography directly on molecular beam epitaxy grown AlInP/GaAs surface. At normal incidence, the structures exhibited an average reflectivity of 2.7% measured in a spectral range 450-1650 nm. Photoluminescence measurements of the emission from GaAs substrate suggest that the optical losses associated with the moth-eye pattern are low. Nanoimprint lithography offers a cost-effective approach to fabricate broadband antireflection coatings required in III-V high-efficiency multijunction solar cells. (author)}
doi = {10.1016/J.SOLMAT.2010.05.053}
journal = []
issue = {10}
volume = {94}
place = {Netherlands}
year = {2010}
month = {Oct}
}