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Phase-coherent transport and spin-orbit coupling in InN nanowires connected in parallel

Abstract

Semiconductor nanowires based on InN are interesting candidates for future nanolelectronic devices because the surface accumulation layer guarantees a highly conductive channel. However, the spin-transport properties are basically unknown for this material system. In order to obtain information regarding the spin transport, we investigated the low-temperature magnetoconductance of InN nanowires connected in parallel. Usually, phase-coherent transport in small conductors results in conductance fluctuations. By connecting N nanowires in parallel a considerable decrease of the fluctuation amplitude and a reduction of the variance proportional to {radical}(N) can be achieved. This suppression of the fluctuations permits to study weak localization and weak antilocalization effects which are manifested in negative and positive magnetoconductivity around zero magnetic fields, respectively. From these features, information about the phase-coherence length and the spin-orbit scattering length can be obtained. At low magnetic fields we found a clear signature of the weak antilocalization effect indicating the presence of spin-orbit coupling in InN nanowires.
Authors:
Alagha, Shima; Estevez Hernandez, Sergio; Calarco, Raffaella; Schaepers, Thomas; Gruetzmacher, Detlev; [1]  JARA-Fundamentals of Future Information Technology (Germany)]
  1. Institute for Bio- and Nanosystems (IBN-1), Research Centre Juelich GmbH, Juelich (Germany)
Publication Date:
Jul 01, 2009
Product Type:
Journal Article
Resource Relation:
Journal Name: Verhandlungen der Deutschen Physikalischen Gesellschaft; Journal Issue: Dresden 2009 issue; Conference: DPG Spring meeting 2009 of the condensed matter section with the divisions biological physics, chemical and polymer physics, dielectric solids, dynamics and statistical physics, low temperature physics, magnetism, metal and material physics, semiconductor physics, surface science, thin films, vacuum science and technology as well as the working groups industry and business, physics of socio-economic systems, Dresden (Germany), 22-27 Mar 2009; Other Information: Session: HL 48.27 Do 15:00; No further information available; Also available as printed version: Verhandlungen der Deutschen Physikalischen Gesellschaft v. 44(5)
Subject:
36 MATERIALS SCIENCE; CHARGE TRANSPORT; FLUCTUATIONS; INDIUM NITRIDES; L-S COUPLING; MAGNETIC FIELDS; MAGNETORESISTANCE; QUANTUM WIRES
OSTI ID:
21284589
Country of Origin:
Germany
Language:
English
Other Identifying Numbers:
Journal ID: ISSN 0420-0195; VDPEAZ; TRN: DE10F3412
Availability:
http://www.dpg-verhandlungen.de
Submitting Site:
DEN
Size:
1 pages
Announcement Date:
Apr 12, 2010

Citation Formats

Alagha, Shima, Estevez Hernandez, Sergio, Calarco, Raffaella, Schaepers, Thomas, Gruetzmacher, Detlev, and JARA-Fundamentals of Future Information Technology (Germany)]. Phase-coherent transport and spin-orbit coupling in InN nanowires connected in parallel. Germany: N. p., 2009. Web.
Alagha, Shima, Estevez Hernandez, Sergio, Calarco, Raffaella, Schaepers, Thomas, Gruetzmacher, Detlev, & JARA-Fundamentals of Future Information Technology (Germany)]. Phase-coherent transport and spin-orbit coupling in InN nanowires connected in parallel. Germany.
Alagha, Shima, Estevez Hernandez, Sergio, Calarco, Raffaella, Schaepers, Thomas, Gruetzmacher, Detlev, and JARA-Fundamentals of Future Information Technology (Germany)]. 2009. "Phase-coherent transport and spin-orbit coupling in InN nanowires connected in parallel." Germany.
@misc{etde_21284589,
title = {Phase-coherent transport and spin-orbit coupling in InN nanowires connected in parallel}
author = {Alagha, Shima, Estevez Hernandez, Sergio, Calarco, Raffaella, Schaepers, Thomas, Gruetzmacher, Detlev, and JARA-Fundamentals of Future Information Technology (Germany)]}
abstractNote = {Semiconductor nanowires based on InN are interesting candidates for future nanolelectronic devices because the surface accumulation layer guarantees a highly conductive channel. However, the spin-transport properties are basically unknown for this material system. In order to obtain information regarding the spin transport, we investigated the low-temperature magnetoconductance of InN nanowires connected in parallel. Usually, phase-coherent transport in small conductors results in conductance fluctuations. By connecting N nanowires in parallel a considerable decrease of the fluctuation amplitude and a reduction of the variance proportional to {radical}(N) can be achieved. This suppression of the fluctuations permits to study weak localization and weak antilocalization effects which are manifested in negative and positive magnetoconductivity around zero magnetic fields, respectively. From these features, information about the phase-coherence length and the spin-orbit scattering length can be obtained. At low magnetic fields we found a clear signature of the weak antilocalization effect indicating the presence of spin-orbit coupling in InN nanowires.}
journal = {Verhandlungen der Deutschen Physikalischen Gesellschaft}
issue = {Dresden 2009 issue}
place = {Germany}
year = {2009}
month = {Jul}
}