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Gate-controlled conductance fluctuations in InN nanowires

Abstract

Nanowires based on InN are interesting because of their large surface conductivity and their low energy band gap. For nanoscaled devices operated at low temperatures electron interference effects can largely affect the transport properties. Typical phenomena are universal conductance fluctuations or weak localization. The characteristic fluctuation pattern observed in the conductance was employed to obtain information on phase-coherent transport. The conductance fluctuations were measured at low temperatures as a function of the gate voltage at fixed magnetic fields. By analyzing the root mean square and the correlation field of the conductance fluctuations at various temperatures, the phase-coherence length was determined. From the conductance traces as a function of gate voltage the variance of the conductance var(G) was determined at different magnetic fields. The largest variance was found close to zero magnetic field while at finite magnetic fields var(G) is reduced to almost half value. This reduction can be explained by the broken time-reversal symmetry in the presence of a magnetic field.
Authors:
Estevez Hernandez, Sergio; Petersen, Gunnar; Frielinghaus, Robert; Meijers, Ralph; Calarco, Raffaella; Schaepers, Thomas; Gruetzmacher, Detlev; [1]  JARA-Fundamentals of Future Information Technology (Germany)]
  1. Institute for Bio- and Nanosystems (IBN-1), Research Centre Juelich GmbH, Juelich (Germany)
Publication Date:
Jul 01, 2009
Product Type:
Journal Article
Resource Relation:
Journal Name: Verhandlungen der Deutschen Physikalischen Gesellschaft; Journal Issue: Dresden 2009 issue; Conference: DPG Spring meeting 2009 of the condensed matter section with the divisions biological physics, chemical and polymer physics, dielectric solids, dynamics and statistical physics, low temperature physics, magnetism, metal and material physics, semiconductor physics, surface science, thin films, vacuum science and technology as well as the working groups industry and business, physics of socio-economic systems, Dresden (Germany), 22-27 Mar 2009; Other Information: Session: HL 48.26 Do 15:00; No further information available; Also available as printed version: Verhandlungen der Deutschen Physikalischen Gesellschaft v. 44(5)
Subject:
36 MATERIALS SCIENCE; CORRELATIONS; ELECTRIC CONDUCTIVITY; FLUCTUATIONS; INDIUM NITRIDES; MAGNETIC FIELDS; QUANTUM WIRES; SYMMETRY BREAKING; T INVARIANCE
OSTI ID:
21284588
Country of Origin:
Germany
Language:
English
Other Identifying Numbers:
Journal ID: ISSN 0420-0195; VDPEAZ; TRN: DE10F3413
Availability:
http://www.dpg-verhandlungen.de
Submitting Site:
DEN
Size:
1 pages
Announcement Date:
Apr 12, 2010

Citation Formats

Estevez Hernandez, Sergio, Petersen, Gunnar, Frielinghaus, Robert, Meijers, Ralph, Calarco, Raffaella, Schaepers, Thomas, Gruetzmacher, Detlev, and JARA-Fundamentals of Future Information Technology (Germany)]. Gate-controlled conductance fluctuations in InN nanowires. Germany: N. p., 2009. Web.
Estevez Hernandez, Sergio, Petersen, Gunnar, Frielinghaus, Robert, Meijers, Ralph, Calarco, Raffaella, Schaepers, Thomas, Gruetzmacher, Detlev, & JARA-Fundamentals of Future Information Technology (Germany)]. Gate-controlled conductance fluctuations in InN nanowires. Germany.
Estevez Hernandez, Sergio, Petersen, Gunnar, Frielinghaus, Robert, Meijers, Ralph, Calarco, Raffaella, Schaepers, Thomas, Gruetzmacher, Detlev, and JARA-Fundamentals of Future Information Technology (Germany)]. 2009. "Gate-controlled conductance fluctuations in InN nanowires." Germany.
@misc{etde_21284588,
title = {Gate-controlled conductance fluctuations in InN nanowires}
author = {Estevez Hernandez, Sergio, Petersen, Gunnar, Frielinghaus, Robert, Meijers, Ralph, Calarco, Raffaella, Schaepers, Thomas, Gruetzmacher, Detlev, and JARA-Fundamentals of Future Information Technology (Germany)]}
abstractNote = {Nanowires based on InN are interesting because of their large surface conductivity and their low energy band gap. For nanoscaled devices operated at low temperatures electron interference effects can largely affect the transport properties. Typical phenomena are universal conductance fluctuations or weak localization. The characteristic fluctuation pattern observed in the conductance was employed to obtain information on phase-coherent transport. The conductance fluctuations were measured at low temperatures as a function of the gate voltage at fixed magnetic fields. By analyzing the root mean square and the correlation field of the conductance fluctuations at various temperatures, the phase-coherence length was determined. From the conductance traces as a function of gate voltage the variance of the conductance var(G) was determined at different magnetic fields. The largest variance was found close to zero magnetic field while at finite magnetic fields var(G) is reduced to almost half value. This reduction can be explained by the broken time-reversal symmetry in the presence of a magnetic field.}
journal = {Verhandlungen der Deutschen Physikalischen Gesellschaft}
issue = {Dresden 2009 issue}
place = {Germany}
year = {2009}
month = {Jul}
}