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GaN and InN nanowires: Si and Mg doping

Abstract

Doping is essential for the realization of optoelectronic devices and represents a complex task if related to nanowires. We have studied GaN and InN nanowires (NWs) doped by Si and Mg obtained by catalyst-free MBE on Si(111) in N-rich conditions. Increasing the Si amount the morphology as well as the density of the wires changes. Successful n-doping of GaN nanowires has been shown by electrical and optoelectrical measurements. Due to the sensitivity of the electrical transport to the wire diameter (size dependent surface barrier), it was possible to determine the doping level of single nanowire. A small amount of Mg increases the tendency of the wires to coalesce. For InN nanowires doped with Si a reduced NWs density is observed as compared to the undoped counterpart. The Mg doping does not change the morphology of the NWs as compared to the undoped however some staking faults at the tip could be observed.
Authors:
Stoica, Toma; Meijers, Ralph; Debnath, Ratan; Richter, Thomas; Lueth, Hans; Calarco, Raffaella; [1]  Sutter, Eli; [2]  Jeganathan, Kulandaivel; [1]  Department of Physics, Bharathidasan University, Trichirappalli (India)]; Marso, Michel; [1]  University of Luxembourg (Luxembourg). Faculty of Sciences, Technology and Communication]
  1. Institute of Semiconductor Nanoelectronics (IBN-1), Research Centre Juelich GmbH, D-52425 Juelich, JARA- Fundamentals of Future Information Technology (Germany)
  2. Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York (United States)
Publication Date:
Jul 01, 2009
Product Type:
Journal Article
Resource Relation:
Journal Name: Verhandlungen der Deutschen Physikalischen Gesellschaft; Journal Issue: Dresden 2009 issue; Conference: DPG Spring meeting 2009 of the condensed matter section with the divisions biological physics, chemical and polymer physics, dielectric solids, dynamics and statistical physics, low temperature physics, magnetism, metal and material physics, semiconductor physics, surface science, thin films, vacuum science and technology as well as the working groups industry and business, physics of socio-economic systems, Dresden (Germany), 22-27 Mar 2009; Other Information: Session: HL 33.8 Mi 16:00; No further information available; Also available as printed version: Verhandlungen der Deutschen Physikalischen Gesellschaft v. 44(5)
Subject:
36 MATERIALS SCIENCE; COALESCENCE; CRYSTAL DOPING; DENSITY; DOPED MATERIALS; GALLIUM NITRIDES; INDIUM NITRIDES; MAGNESIUM ADDITIONS; MOLECULAR BEAM EPITAXY; MORPHOLOGY; N-TYPE CONDUCTORS; QUANTUM WIRES; SILICON; SILICON ADDITIONS; STACKING FAULTS; SUBSTRATES; SURFACES
OSTI ID:
21284527
Country of Origin:
Germany
Language:
English
Other Identifying Numbers:
Journal ID: ISSN 0420-0195; VDPEAZ; TRN: DE10F3474
Availability:
http://www.dpg-verhandlungen.de
Submitting Site:
DEN
Size:
1 pages
Announcement Date:
Apr 12, 2010

Citation Formats

Stoica, Toma, Meijers, Ralph, Debnath, Ratan, Richter, Thomas, Lueth, Hans, Calarco, Raffaella, Sutter, Eli, Jeganathan, Kulandaivel, Department of Physics, Bharathidasan University, Trichirappalli (India)], Marso, Michel, and University of Luxembourg (Luxembourg). Faculty of Sciences, Technology and Communication]. GaN and InN nanowires: Si and Mg doping. Germany: N. p., 2009. Web.
Stoica, Toma, Meijers, Ralph, Debnath, Ratan, Richter, Thomas, Lueth, Hans, Calarco, Raffaella, Sutter, Eli, Jeganathan, Kulandaivel, Department of Physics, Bharathidasan University, Trichirappalli (India)], Marso, Michel, & University of Luxembourg (Luxembourg). Faculty of Sciences, Technology and Communication]. GaN and InN nanowires: Si and Mg doping. Germany.
Stoica, Toma, Meijers, Ralph, Debnath, Ratan, Richter, Thomas, Lueth, Hans, Calarco, Raffaella, Sutter, Eli, Jeganathan, Kulandaivel, Department of Physics, Bharathidasan University, Trichirappalli (India)], Marso, Michel, and University of Luxembourg (Luxembourg). Faculty of Sciences, Technology and Communication]. 2009. "GaN and InN nanowires: Si and Mg doping." Germany.
@misc{etde_21284527,
title = {GaN and InN nanowires: Si and Mg doping}
author = {Stoica, Toma, Meijers, Ralph, Debnath, Ratan, Richter, Thomas, Lueth, Hans, Calarco, Raffaella, Sutter, Eli, Jeganathan, Kulandaivel, Department of Physics, Bharathidasan University, Trichirappalli (India)], Marso, Michel, and University of Luxembourg (Luxembourg). Faculty of Sciences, Technology and Communication]}
abstractNote = {Doping is essential for the realization of optoelectronic devices and represents a complex task if related to nanowires. We have studied GaN and InN nanowires (NWs) doped by Si and Mg obtained by catalyst-free MBE on Si(111) in N-rich conditions. Increasing the Si amount the morphology as well as the density of the wires changes. Successful n-doping of GaN nanowires has been shown by electrical and optoelectrical measurements. Due to the sensitivity of the electrical transport to the wire diameter (size dependent surface barrier), it was possible to determine the doping level of single nanowire. A small amount of Mg increases the tendency of the wires to coalesce. For InN nanowires doped with Si a reduced NWs density is observed as compared to the undoped counterpart. The Mg doping does not change the morphology of the NWs as compared to the undoped however some staking faults at the tip could be observed.}
journal = {Verhandlungen der Deutschen Physikalischen Gesellschaft}
issue = {Dresden 2009 issue}
place = {Germany}
year = {2009}
month = {Jul}
}