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Semiconductor nanowires as building blocks for quantum devices

Abstract

Semiconductor nanowires are versatile building blocks for the design of future electronic devices. Among the many possible materials, InN is particularly interesting because of its low energy band gap and its high surface conductivity. At low temperatures electron interference effects often play an important role in the transport characteristics of nanostructures. We studied the electronic transport of InN nanowires grown by plasma-assisted molecular beam epitaxy. The wires had a diameter ranging from 40 nm to 130 nm and a length of approximately 1 {mu}m. Information on the phase-coherent transport was gained from the measurement of universal conductance fluctuations. It was found that at low temperatures phase-coherence is maintained in the complete wire structure, which is an important prerequisite for quantum devices. For nanowires comprising a very small diameter of approximately 40 nm pronounced flux-periodic oscillations in the magneto-conductance were observed. This effect is attributed to the formation of coherent circular quantum states on in the tube-like surface electron gas.
Authors:
Schaepers, Thomas; Estevez Hernandez, Sergio; Petersen, Gunnar; Frielinghaus, Robert; Alagha, Shima; Bloemers, Christian; Richter, Thomas; Calarco, Raffaella; Lueth, Hans; Marso, Michel; [1]  Indlekofer, Michael [2] 
  1. Institute of Bio- and Nanosystems (IBN-1), JARA-Fundamentals of Future Information Technologies, Research Centre Juelich (Germany)
  2. Informationstechnologie and Elektrotechnik, Wiesbaden University of Applied Sciences, Ruesselsheim (Germany)
Publication Date:
Jul 01, 2009
Product Type:
Journal Article
Resource Relation:
Journal Name: Verhandlungen der Deutschen Physikalischen Gesellschaft; Journal Issue: Dresden 2009 issue; Conference: DPG Spring meeting 2009 of the condensed matter section with the divisions biological physics, chemical and polymer physics, dielectric solids, dynamics and statistical physics, low temperature physics, magnetism, metal and material physics, semiconductor physics, surface science, thin films, vacuum science and technology as well as the working groups industry and business, physics of socio-economic systems, Dresden (Germany), 22-27 Mar 2009; Other Information: Session: HL 26.6 Mi 12:30; No further information available; Also available as printed version: Verhandlungen der Deutschen Physikalischen Gesellschaft v. 44(5)
Subject:
36 MATERIALS SCIENCE; CHARGE TRANSPORT; ELECTRON GAS; ELECTRONIC STRUCTURE; ENERGY LEVELS; FLUCTUATIONS; INDIUM NITRIDES; LENGTH; MAGNETORESISTANCE; MOLECULAR BEAM EPITAXY; OSCILLATIONS; PLASMA; QUANTUM WIRES; SEMICONDUCTOR MATERIALS; SURFACES; WIDTH
OSTI ID:
21284477
Country of Origin:
Germany
Language:
English
Other Identifying Numbers:
Journal ID: ISSN 0420-0195; VDPEAZ; TRN: DE10F3524
Availability:
http://www.dpg-verhandlungen.de
Submitting Site:
DEN
Size:
1 pages
Announcement Date:
Apr 12, 2010

Citation Formats

Schaepers, Thomas, Estevez Hernandez, Sergio, Petersen, Gunnar, Frielinghaus, Robert, Alagha, Shima, Bloemers, Christian, Richter, Thomas, Calarco, Raffaella, Lueth, Hans, Marso, Michel, and Indlekofer, Michael. Semiconductor nanowires as building blocks for quantum devices. Germany: N. p., 2009. Web.
Schaepers, Thomas, Estevez Hernandez, Sergio, Petersen, Gunnar, Frielinghaus, Robert, Alagha, Shima, Bloemers, Christian, Richter, Thomas, Calarco, Raffaella, Lueth, Hans, Marso, Michel, & Indlekofer, Michael. Semiconductor nanowires as building blocks for quantum devices. Germany.
Schaepers, Thomas, Estevez Hernandez, Sergio, Petersen, Gunnar, Frielinghaus, Robert, Alagha, Shima, Bloemers, Christian, Richter, Thomas, Calarco, Raffaella, Lueth, Hans, Marso, Michel, and Indlekofer, Michael. 2009. "Semiconductor nanowires as building blocks for quantum devices." Germany.
@misc{etde_21284477,
title = {Semiconductor nanowires as building blocks for quantum devices}
author = {Schaepers, Thomas, Estevez Hernandez, Sergio, Petersen, Gunnar, Frielinghaus, Robert, Alagha, Shima, Bloemers, Christian, Richter, Thomas, Calarco, Raffaella, Lueth, Hans, Marso, Michel, and Indlekofer, Michael}
abstractNote = {Semiconductor nanowires are versatile building blocks for the design of future electronic devices. Among the many possible materials, InN is particularly interesting because of its low energy band gap and its high surface conductivity. At low temperatures electron interference effects often play an important role in the transport characteristics of nanostructures. We studied the electronic transport of InN nanowires grown by plasma-assisted molecular beam epitaxy. The wires had a diameter ranging from 40 nm to 130 nm and a length of approximately 1 {mu}m. Information on the phase-coherent transport was gained from the measurement of universal conductance fluctuations. It was found that at low temperatures phase-coherence is maintained in the complete wire structure, which is an important prerequisite for quantum devices. For nanowires comprising a very small diameter of approximately 40 nm pronounced flux-periodic oscillations in the magneto-conductance were observed. This effect is attributed to the formation of coherent circular quantum states on in the tube-like surface electron gas.}
journal = {Verhandlungen der Deutschen Physikalischen Gesellschaft}
issue = {Dresden 2009 issue}
place = {Germany}
year = {2009}
month = {Jul}
}