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Investigation of hyperfine interactions in pure silicon and NTD silicon by means of perturbed angular {gamma}-{gamma} correlation spectroscopy; Investigacao de interacoes hiperfinas em silicio puro e silicio NTD pela tecnica de correlacao angular {gamma}-{gamma} perturbada

Abstract

III the present work, a microscopic investigation of hyperfine interactions in single crystal silicon samples was carried out by means of Perturbed Angular {gamma} -{gamma} correlation technique (PAC), which is based in hyperfine interactions. In order to achieve these measurements, it was used {sup 111} In {yields} {sup 111}Cd radioactive probe nuclei, which decay through the well known {gamma} cascade 171-245 keV with an intermediate level of 245 keV ( I 5{sup +}/2, Q = 0.83b, T{sub 1/2} = 84.5 ns). The samples were prepared using different probe nuclei insertion methods, making possible to increase our understanding on the impact generated by each of these techniques in PAC measurements. Ion implantation, diffusion and evaporation were carefully investigated giving emphasis on its characteristics and particularities. Then, it was made a study about the concentration of intrinsic defects as function of severe annealing processes. Finally, a comparative analysis was made for all these probe nuclei insertion methods. This work also accomplished PAC measurements in single crystal silicon doped with phosphorus by means of Neutron Transmutation Doping (NTD) method, carried out in a research nuclear reactor. The extremely high doping uniformity allied to the nonexistence of previous measurements in these materials emphasize the  More>>
Publication Date:
Jul 01, 2007
Product Type:
Thesis/Dissertation
Report Number:
INIS-BR-5903
Resource Relation:
Other Information: TH: Diss. (M.Sc.); 41 refs., 34 figs., 5 tabs
Subject:
73 NUCLEAR PHYSICS AND RADIATION PHYSICS; ANGULAR CORRELATION; ANGULAR DISTRIBUTION; CADMIUM; DECAY; GAMMA DETECTION; GAMMA DOSIMETRY; GAMMA RADIATION; GAMMA SPECTROSCOPY; HYPERFINE STRUCTURE; INDIUM; NEUTRON DOSIMETRY; SILICON; SPECTRA
OSTI ID:
21219215
Research Organizations:
Instituto de Pesquisas Energeticas e Nucleares (IPEN/CNEN-SP), Sao Paulo, SP (Brazil)
Country of Origin:
Brazil
Language:
Portuguese
Other Identifying Numbers:
TRN: BR09V2913087763
Availability:
Available from INIS in electronic form
Submitting Site:
BRN
Size:
87 pages
Announcement Date:
Nov 05, 2009

Citation Formats

Cordeiro, Moacir Ribeiro. Investigation of hyperfine interactions in pure silicon and NTD silicon by means of perturbed angular {gamma}-{gamma} correlation spectroscopy; Investigacao de interacoes hiperfinas em silicio puro e silicio NTD pela tecnica de correlacao angular {gamma}-{gamma} perturbada. Brazil: N. p., 2007. Web.
Cordeiro, Moacir Ribeiro. Investigation of hyperfine interactions in pure silicon and NTD silicon by means of perturbed angular {gamma}-{gamma} correlation spectroscopy; Investigacao de interacoes hiperfinas em silicio puro e silicio NTD pela tecnica de correlacao angular {gamma}-{gamma} perturbada. Brazil.
Cordeiro, Moacir Ribeiro. 2007. "Investigation of hyperfine interactions in pure silicon and NTD silicon by means of perturbed angular {gamma}-{gamma} correlation spectroscopy; Investigacao de interacoes hiperfinas em silicio puro e silicio NTD pela tecnica de correlacao angular {gamma}-{gamma} perturbada." Brazil.
@misc{etde_21219215,
title = {Investigation of hyperfine interactions in pure silicon and NTD silicon by means of perturbed angular {gamma}-{gamma} correlation spectroscopy; Investigacao de interacoes hiperfinas em silicio puro e silicio NTD pela tecnica de correlacao angular {gamma}-{gamma} perturbada}
author = {Cordeiro, Moacir Ribeiro}
abstractNote = {III the present work, a microscopic investigation of hyperfine interactions in single crystal silicon samples was carried out by means of Perturbed Angular {gamma} -{gamma} correlation technique (PAC), which is based in hyperfine interactions. In order to achieve these measurements, it was used {sup 111} In {yields} {sup 111}Cd radioactive probe nuclei, which decay through the well known {gamma} cascade 171-245 keV with an intermediate level of 245 keV ( I 5{sup +}/2, Q = 0.83b, T{sub 1/2} = 84.5 ns). The samples were prepared using different probe nuclei insertion methods, making possible to increase our understanding on the impact generated by each of these techniques in PAC measurements. Ion implantation, diffusion and evaporation were carefully investigated giving emphasis on its characteristics and particularities. Then, it was made a study about the concentration of intrinsic defects as function of severe annealing processes. Finally, a comparative analysis was made for all these probe nuclei insertion methods. This work also accomplished PAC measurements in single crystal silicon doped with phosphorus by means of Neutron Transmutation Doping (NTD) method, carried out in a research nuclear reactor. The extremely high doping uniformity allied to the nonexistence of previous measurements in these materials emphasize the importance of the results obtained. These results are then compared with literature results for samples doped by conventional methods presenting the respective conclusions. (author)}
place = {Brazil}
year = {2007}
month = {Jul}
}