Abstract
With 4.2 nm quantum-dots (QDs) as seeds on TiO{sub 2} film, a highly efficient TiO{sub 2} photoelectrode was prepared by a seed-growing process using chemical bath deposition technique, followed by a covering process with ZnS layer, and a post-sintering process at 400 C. The assembled solar cells presented IPCE peak values of 73% and power conversion efficiency of 3.21% under AM 1.5 G irradiation. (author)
Fan, Sheng-Qiang;
Kim, Duckhyun;
Kim, Jeum-Jong;
Kang, Sang Ook;
Ko, Jaejung;
[1]
Jung, Dong Woon
[2]
- Department of Advanced Material Chemistry, Korea University, Jochiwon, Chungnam 339-700 (Korea)
- Department of Chemistry, Wonkwang University, Ikasan Jeonbuk 570-749 (Korea)
Citation Formats
Fan, Sheng-Qiang, Kim, Duckhyun, Kim, Jeum-Jong, Kang, Sang Ook, Ko, Jaejung, and Jung, Dong Woon.
Highly efficient CdSe quantum-dot-sensitized TiO{sub 2} photoelectrodes for solar cell applications.
Netherlands: N. p.,
2009.
Web.
doi:10.1016/J.ELECOM.2009.04.037.
Fan, Sheng-Qiang, Kim, Duckhyun, Kim, Jeum-Jong, Kang, Sang Ook, Ko, Jaejung, & Jung, Dong Woon.
Highly efficient CdSe quantum-dot-sensitized TiO{sub 2} photoelectrodes for solar cell applications.
Netherlands.
https://doi.org/10.1016/J.ELECOM.2009.04.037
Fan, Sheng-Qiang, Kim, Duckhyun, Kim, Jeum-Jong, Kang, Sang Ook, Ko, Jaejung, and Jung, Dong Woon.
2009.
"Highly efficient CdSe quantum-dot-sensitized TiO{sub 2} photoelectrodes for solar cell applications."
Netherlands.
https://doi.org/10.1016/J.ELECOM.2009.04.037.
@misc{etde_21210819,
title = {Highly efficient CdSe quantum-dot-sensitized TiO{sub 2} photoelectrodes for solar cell applications}
author = {Fan, Sheng-Qiang, Kim, Duckhyun, Kim, Jeum-Jong, Kang, Sang Ook, Ko, Jaejung, and Jung, Dong Woon}
abstractNote = {With 4.2 nm quantum-dots (QDs) as seeds on TiO{sub 2} film, a highly efficient TiO{sub 2} photoelectrode was prepared by a seed-growing process using chemical bath deposition technique, followed by a covering process with ZnS layer, and a post-sintering process at 400 C. The assembled solar cells presented IPCE peak values of 73% and power conversion efficiency of 3.21% under AM 1.5 G irradiation. (author)}
doi = {10.1016/J.ELECOM.2009.04.037}
journal = []
issue = {6}
volume = {11}
place = {Netherlands}
year = {2009}
month = {Jun}
}
title = {Highly efficient CdSe quantum-dot-sensitized TiO{sub 2} photoelectrodes for solar cell applications}
author = {Fan, Sheng-Qiang, Kim, Duckhyun, Kim, Jeum-Jong, Kang, Sang Ook, Ko, Jaejung, and Jung, Dong Woon}
abstractNote = {With 4.2 nm quantum-dots (QDs) as seeds on TiO{sub 2} film, a highly efficient TiO{sub 2} photoelectrode was prepared by a seed-growing process using chemical bath deposition technique, followed by a covering process with ZnS layer, and a post-sintering process at 400 C. The assembled solar cells presented IPCE peak values of 73% and power conversion efficiency of 3.21% under AM 1.5 G irradiation. (author)}
doi = {10.1016/J.ELECOM.2009.04.037}
journal = []
issue = {6}
volume = {11}
place = {Netherlands}
year = {2009}
month = {Jun}
}