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Hydrazine-based deposition route for device-quality CIGS films

Abstract

A simple solution-based approach for depositing CIGS (Cu-In-Ga-Se/S) absorber layers is discussed, with an emphasis on film characterization, interfacial properties and integration into photovoltaic devices. The process involves incorporating all metal and chalcogenide components into a single hydrazine-based solution, spin coating a precursor film, and heat treating in an inert atmosphere, to form the desired CIGS film with up to micron-scaled film thickness and grain size. PV devices (glass/Mo/CIGS/CdS/i-ZnO/ITO) employing the spin-coated CIGS and using processing temperatures below 500 deg. C have yielded power conversion efficiencies of up to 10% (AM 1.5 illumination), without the need for a post-CIGS-deposition treatment in a gaseous Se source or a cyanide-based bath etch. Short-duration low-temperature (T < 200 deg. C ) oxygen treatment of completed devices is shown to have a positive impact on the performance of initially underperforming cells, thereby enabling better performance in devices prepared at temperatures below 500 deg. C.
Authors:
Mitzi, David B. , E-mail: dmitzi@us.ibm.com; [1]  Yuan, Min; Liu, Wei; [1]  Kellock, Andrew J; [2]  Chey, S Jay; Gignac, Lynne; Schrott, Alex G [1] 
  1. IBM T. J. Watson Research Center, P. O. Box 218, Yorktown Heights, NY 10598 (United States)
  2. IBM Almaden Research Center, 650 Harry Rd, San Jose, CA 95120 (United States)
Publication Date:
Feb 02, 2009
Product Type:
Journal Article
Resource Relation:
Journal Name: Thin Solid Films; Journal Volume: 517; Journal Issue: 7; Conference: EMRS 2008 spring meeting: Symposium L: Thin film chalogenide photovoltaic materials, Strasbourg (France), 26-30 May 2008; Other Information: DOI: 10.1016/j.tsf.2008.10.079; PII: S0040-6090(08)01311-4; Copyright (c) 2008 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved; Country of input: International Atomic Energy Agency (IAEA)
Subject:
36 MATERIALS SCIENCE; CADMIUM SULFIDES; GLASS; GRAIN SIZE; HEAT; HYDRAZINE; ILLUMINANCE; INERT ATMOSPHERE; LAYERS; METALS; OXYGEN; PERFORMANCE; PHOTOVOLTAIC EFFECT; SOLAR CELLS; SOLUTIONS; SPIN-ON COATING; TEMPERATURE RANGE 0273-0400 K; THIN FILMS; ZINC OXIDES
OSTI ID:
21189576
Country of Origin:
Netherlands
Language:
English
Other Identifying Numbers:
Journal ID: ISSN 0040-6090; THSFAP; TRN: NL09R7236061838
Availability:
Available from http://dx.doi.org/10.1016/j.tsf.2008.10.079;INIS
Submitting Site:
NLN
Size:
page(s) 2158-2162
Announcement Date:
Aug 15, 2009

Citation Formats

Mitzi, David B. , E-mail: dmitzi@us.ibm.com, Yuan, Min, Liu, Wei, Kellock, Andrew J, Chey, S Jay, Gignac, Lynne, and Schrott, Alex G. Hydrazine-based deposition route for device-quality CIGS films. Netherlands: N. p., 2009. Web. doi:10.1016/j.tsf.2008.10.079.
Mitzi, David B. , E-mail: dmitzi@us.ibm.com, Yuan, Min, Liu, Wei, Kellock, Andrew J, Chey, S Jay, Gignac, Lynne, & Schrott, Alex G. Hydrazine-based deposition route for device-quality CIGS films. Netherlands. doi:10.1016/j.tsf.2008.10.079.
Mitzi, David B. , E-mail: dmitzi@us.ibm.com, Yuan, Min, Liu, Wei, Kellock, Andrew J, Chey, S Jay, Gignac, Lynne, and Schrott, Alex G. 2009. "Hydrazine-based deposition route for device-quality CIGS films." Netherlands. doi:10.1016/j.tsf.2008.10.079. https://www.osti.gov/servlets/purl/10.1016/j.tsf.2008.10.079.
@misc{etde_21189576,
title = {Hydrazine-based deposition route for device-quality CIGS films}
author = {Mitzi, David B. , E-mail: dmitzi@us.ibm.com, Yuan, Min, Liu, Wei, Kellock, Andrew J, Chey, S Jay, Gignac, Lynne, and Schrott, Alex G}
abstractNote = {A simple solution-based approach for depositing CIGS (Cu-In-Ga-Se/S) absorber layers is discussed, with an emphasis on film characterization, interfacial properties and integration into photovoltaic devices. The process involves incorporating all metal and chalcogenide components into a single hydrazine-based solution, spin coating a precursor film, and heat treating in an inert atmosphere, to form the desired CIGS film with up to micron-scaled film thickness and grain size. PV devices (glass/Mo/CIGS/CdS/i-ZnO/ITO) employing the spin-coated CIGS and using processing temperatures below 500 deg. C have yielded power conversion efficiencies of up to 10% (AM 1.5 illumination), without the need for a post-CIGS-deposition treatment in a gaseous Se source or a cyanide-based bath etch. Short-duration low-temperature (T < 200 deg. C ) oxygen treatment of completed devices is shown to have a positive impact on the performance of initially underperforming cells, thereby enabling better performance in devices prepared at temperatures below 500 deg. C.}
doi = {10.1016/j.tsf.2008.10.079}
journal = {Thin Solid Films}
issue = {7}
volume = {517}
place = {Netherlands}
year = {2009}
month = {Feb}
}