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Determining doping concentration and mobility in GaN nanowires by opto-electrical characterization

Abstract

Nanostructures such as semiconductor nanowires have an increasing interest as possible candidates for novel beyond-CMOS nanodevice concepts. This is strongly motivated by their already proved high versatility and practical applications. Nevertheless of these promising achievements, there are still great challenges concerning fundamental questions of physics in those nanoscaling devices. Properties like the doping and resulting electrical transport are an important field of research. We report the growth of GaN nanowires by plasma-assisted molecular beam epitaxy on Si(111) substrate. These nanowires vary in density and diameter from 20 to300 nm. For the electrical characterisation the nanowires GaN have then be transferred to a Si(100) substrate covered with a layer of SiO{sub 2}. Single nanowire devices have been fabricated by e-beam patterning technique. The electrical transport properties of the resulting metal-semiconductor-metal nanostructures are analyzed by means of current-voltage measurements. The transport in nanowires is extremely sensitive to the wire diameter due to the size dependent recombination barrier. This effect is used to determine doping level and mobility of the nanowires and to confirm our previously developed surface recombination model for GaN nanowires.
Authors:
Publication Date:
Jul 01, 2008
Product Type:
Journal Article
Resource Relation:
Journal Name: Verhandlungen der Deutschen Physikalischen Gesellschaft; Journal Volume: 43; Journal Issue: 1; Conference: 72. annual meeting and DPG (Deutsche Physikalische Gesellschaft e.V.) Spring meeting of the Condensed Matter Section and the Divisions: Physics Education, History of Physics, Radiation and Medical Physics as well as the Working Groups Equal Opportunities, Industry and Business, Information, Physics and Disarmament, Physics of Socio-economic Systems, Young DPG, 72. Jahrestagung und DPG (Deutsche Physikalische Gesellschaft e.V.) Fruehjahrstagung der Sektion Kondensierte Materie und den Fachverbaenden: Didaktik der Physik, Geschichte der Physik, Strahlen- und Medizinphysik und den Arbeitskreisen Chancengleichheit, Industrie und Wirtschaft, Information, Physik und Abruestung, Physik Sozio-oekonomischer Systeme, Junge DPG, Berlin (Germany), 25-29 Feb 2008; Other Information: Session: HL 23.1 Di 11:00; No further information available
Subject:
36 MATERIALS SCIENCE; CARRIER MOBILITY; QUANTUM WIRES; PLASMA; MOLECULAR BEAM EPITAXY; SUBSTRATES; LAYERS; SURFACES; SILICON OXIDES; GALLIUM NITRIDES; SILICON; DOPED MATERIALS; CARRIER DENSITY; ELECTROPLATING; ELECTRIC CONDUCTIVITY
OSTI ID:
21169077
Country of Origin:
Germany
Language:
English
Other Identifying Numbers:
Journal ID: ISSN 0420-0195; VDPEAZ; TRN: DE09G5953
Availability:
Also available online: http://www.dpg-tagungen.de/index_en.html
Submitting Site:
DE
Size:
1 pages
Announcement Date:
May 28, 2009

Citation Formats

Richter, Thomas, Marso, Michel, Meijers, Ralph, Calarco, Raffaella, Gruetzmacher, Detlev, Lueth, Hans, and Centre of Nanoelectronic Systems for Information Technology, Research Center Juelich, D-52425 Juelich (Germany)]. Determining doping concentration and mobility in GaN nanowires by opto-electrical characterization. Germany: N. p., 2008. Web.
Richter, Thomas, Marso, Michel, Meijers, Ralph, Calarco, Raffaella, Gruetzmacher, Detlev, Lueth, Hans, & Centre of Nanoelectronic Systems for Information Technology, Research Center Juelich, D-52425 Juelich (Germany)]. Determining doping concentration and mobility in GaN nanowires by opto-electrical characterization. Germany.
Richter, Thomas, Marso, Michel, Meijers, Ralph, Calarco, Raffaella, Gruetzmacher, Detlev, Lueth, Hans, and Centre of Nanoelectronic Systems for Information Technology, Research Center Juelich, D-52425 Juelich (Germany)]. 2008. "Determining doping concentration and mobility in GaN nanowires by opto-electrical characterization." Germany.
@misc{etde_21169077,
title = {Determining doping concentration and mobility in GaN nanowires by opto-electrical characterization}
author = {Richter, Thomas, Marso, Michel, Meijers, Ralph, Calarco, Raffaella, Gruetzmacher, Detlev, Lueth, Hans, and Centre of Nanoelectronic Systems for Information Technology, Research Center Juelich, D-52425 Juelich (Germany)]}
abstractNote = {Nanostructures such as semiconductor nanowires have an increasing interest as possible candidates for novel beyond-CMOS nanodevice concepts. This is strongly motivated by their already proved high versatility and practical applications. Nevertheless of these promising achievements, there are still great challenges concerning fundamental questions of physics in those nanoscaling devices. Properties like the doping and resulting electrical transport are an important field of research. We report the growth of GaN nanowires by plasma-assisted molecular beam epitaxy on Si(111) substrate. These nanowires vary in density and diameter from 20 to300 nm. For the electrical characterisation the nanowires GaN have then be transferred to a Si(100) substrate covered with a layer of SiO{sub 2}. Single nanowire devices have been fabricated by e-beam patterning technique. The electrical transport properties of the resulting metal-semiconductor-metal nanostructures are analyzed by means of current-voltage measurements. The transport in nanowires is extremely sensitive to the wire diameter due to the size dependent recombination barrier. This effect is used to determine doping level and mobility of the nanowires and to confirm our previously developed surface recombination model for GaN nanowires.}
journal = {Verhandlungen der Deutschen Physikalischen Gesellschaft}
issue = {1}
volume = {43}
place = {Germany}
year = {2008}
month = {Jul}
}