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Sn-Sb-Se based binary and ternary alloys for phase change memory applications

Abstract

In this work, the effect of replacing Ge by Sn and Te by Se was studied for a systematic understanding and prediction of new potential candidates for phase change random access memories applications. The temperature dependence of the electrical/structural properties and crystallization kinetics of the Sn-Se based binary and Sn-Sb-Se based ternary alloys were determined and compared with those of the GeTe and Ge-Sb-Te system. The temperature dependence of electrical and structural properties were investigated by van der Pauw measurements, X-ray diffraction, X-ray reflectometry. By varying the heating rate, the Kissinger analysis has been used to determine the combined activation barrier for crystallization. To screen the kinetics of crystallization, a static laser tester was employed. In case of binary alloys of the type Sn{sub x}Se{sub 1-x}, the most interesting candidate is SnSe{sub 2} since it crystallizes into a single crystalline phase and has high electrical contrast and reasonably high activation energy for crystallization. In addition, the SnSe{sub 2}-Sb{sub 2}Se{sub 3} pseudobinary alloy system also might be sufficient for data retention due to their higher transition temperature and activation energy for crystallization in comparison to GeTe-Sb{sub 2}Te{sub 3} system. Furthermore, SnSe{sub 2}-Sb{sub 2}Se{sub 3} pseudobinary alloys have a higher crystalline resistivity.  More>>
Authors:
Publication Date:
Oct 28, 2008
Product Type:
Thesis/Dissertation
Report Number:
ETDE-DE-1933
Resource Relation:
Other Information: TH: Diss. (Dr.rer.nat.)
Subject:
36 MATERIALS SCIENCE; TIN ALLOYS; TEMPERATURE DEPENDENCE; CRYSTALLIZATION; KINETICS; X-RAY DIFFRACTION; ACTIVATION ENERGY; TRANSITION TEMPERATURE; ANTIMONY ALLOYS; SELENIUM ALLOYS; TERNARY ALLOY SYSTEMS; BINARY ALLOY SYSTEMS; ELECTRIC CONDUCTIVITY; BRAGG REFLECTION; CRYSTAL-PHASE TRANSFORMATIONS; FILMS; CRYSTAL LATTICES; EXPERIMENTAL DATA; THICKNESS; DENSITY
OSTI ID:
21135001
Research Organizations:
Rheinisch-Westfaelische Technische Hochschule Aachen (Germany). Fakultaet fuer Mathematik, Informatik und Naturwissenschaften
Country of Origin:
Germany
Language:
English
Other Identifying Numbers:
TRN: DE09G0857
Availability:
Commercial reproduction prohibited; OSTI as DE21135001
Submitting Site:
DE
Size:
202 pages
Announcement Date:
Mar 06, 2009

Citation Formats

Chung, Kyung-Min. Sn-Sb-Se based binary and ternary alloys for phase change memory applications. Germany: N. p., 2008. Web.
Chung, Kyung-Min. Sn-Sb-Se based binary and ternary alloys for phase change memory applications. Germany.
Chung, Kyung-Min. 2008. "Sn-Sb-Se based binary and ternary alloys for phase change memory applications." Germany.
@misc{etde_21135001,
title = {Sn-Sb-Se based binary and ternary alloys for phase change memory applications}
author = {Chung, Kyung-Min}
abstractNote = {In this work, the effect of replacing Ge by Sn and Te by Se was studied for a systematic understanding and prediction of new potential candidates for phase change random access memories applications. The temperature dependence of the electrical/structural properties and crystallization kinetics of the Sn-Se based binary and Sn-Sb-Se based ternary alloys were determined and compared with those of the GeTe and Ge-Sb-Te system. The temperature dependence of electrical and structural properties were investigated by van der Pauw measurements, X-ray diffraction, X-ray reflectometry. By varying the heating rate, the Kissinger analysis has been used to determine the combined activation barrier for crystallization. To screen the kinetics of crystallization, a static laser tester was employed. In case of binary alloys of the type Sn{sub x}Se{sub 1-x}, the most interesting candidate is SnSe{sub 2} since it crystallizes into a single crystalline phase and has high electrical contrast and reasonably high activation energy for crystallization. In addition, the SnSe{sub 2}-Sb{sub 2}Se{sub 3} pseudobinary alloy system also might be sufficient for data retention due to their higher transition temperature and activation energy for crystallization in comparison to GeTe-Sb{sub 2}Te{sub 3} system. Furthermore, SnSe{sub 2}-Sb{sub 2}Se{sub 3} pseudobinary alloys have a higher crystalline resistivity. The desired rapid crystallization speed can be obtained for Sn{sub 1}Sb{sub 2}Se{sub 5} and Sn{sub 2}Sb{sub 2}Se{sub 7} alloys. (orig.)}
place = {Germany}
year = {2008}
month = {Oct}
}