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A high-efficiency solution-deposited thin-film photovoltaic device

Journal Article:

Abstract

High-quality Cu(In,Ga)Se{sub 2} (CIGS) films are deposited from hydrazine-based solutions and are employed as absorber layers in thin-film photovoltaic devices. The CIGS films exhibit tunable stoichiometry and well-formed grain structure without requiring post-deposition high-temperature selenium treatment. Devices based on these films offer power conversion efficiencies of 10% (AM1.5 illumination). (Abstract Copyright [2008], Wiley Periodicals, Inc.)
Authors:
Mitzi, David B; Yuan, Min; Liu, Wei; Chey, S Jay; Schrott, Alex G; [1]  Kellock, Andrew J; Deline, Vaughn [2] 
  1. IBM T. J. Watson Research Center, Yorktown Heights, NY (United States)
  2. IBM Almaden Research Center, San Jose, CA (United States)
Publication Date:
Oct 02, 2008
Product Type:
Journal Article
Resource Relation:
Journal Name: Advanced Materials (Weinheim); Journal Volume: 20; Journal Issue: 19; Other Information: With 4 figs., 0 tabs., 31 refs.. SICI: 0935-9648(20081002)20:19<3657::AID-ADMA200800555>3.0.TX;2-U
Subject:
14 SOLAR ENERGY; FILMS; COPPER SELENIDES; INDIUM SELENIDES; GALLIUM SELENIDES; PHOTOVOLTAIC CELLS; LAYERS; PERFORMANCE
OSTI ID:
21097551
Country of Origin:
Germany
Language:
English
Other Identifying Numbers:
Journal ID: ISSN 0935-9648; ADVMEW; TRN: DE08GB559
Availability:
Available from: http://dx.doi.org/10.1002/adma.200800555
Submitting Site:
DE
Size:
page(s) 3657-3662
Announcement Date:
Nov 07, 2008

Journal Article:

Citation Formats

Mitzi, David B, Yuan, Min, Liu, Wei, Chey, S Jay, Schrott, Alex G, Kellock, Andrew J, and Deline, Vaughn. A high-efficiency solution-deposited thin-film photovoltaic device. Germany: N. p., 2008. Web. doi:10.1002/ADMA.200800555.
Mitzi, David B, Yuan, Min, Liu, Wei, Chey, S Jay, Schrott, Alex G, Kellock, Andrew J, & Deline, Vaughn. A high-efficiency solution-deposited thin-film photovoltaic device. Germany. doi:10.1002/ADMA.200800555.
Mitzi, David B, Yuan, Min, Liu, Wei, Chey, S Jay, Schrott, Alex G, Kellock, Andrew J, and Deline, Vaughn. 2008. "A high-efficiency solution-deposited thin-film photovoltaic device." Germany. doi:10.1002/ADMA.200800555. https://www.osti.gov/servlets/purl/10.1002/ADMA.200800555.
@misc{etde_21097551,
title = {A high-efficiency solution-deposited thin-film photovoltaic device}
author = {Mitzi, David B, Yuan, Min, Liu, Wei, Chey, S Jay, Schrott, Alex G, Kellock, Andrew J, and Deline, Vaughn}
abstractNote = {High-quality Cu(In,Ga)Se{sub 2} (CIGS) films are deposited from hydrazine-based solutions and are employed as absorber layers in thin-film photovoltaic devices. The CIGS films exhibit tunable stoichiometry and well-formed grain structure without requiring post-deposition high-temperature selenium treatment. Devices based on these films offer power conversion efficiencies of 10% (AM1.5 illumination). (Abstract Copyright [2008], Wiley Periodicals, Inc.)}
doi = {10.1002/ADMA.200800555}
journal = {Advanced Materials (Weinheim)}
issue = {19}
volume = {20}
place = {Germany}
year = {2008}
month = {Oct}
}