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Growth, structural, optical and electrical study of ZnS thin films deposited by solution growth technique (SGT)

Journal Article:

Abstract

ZnS thin films have been deposited onto glass substrates at temperature 90 deg. C by solution growth technique (SGT). The deposition parameters were optimized. Triethanolamine (TEA) was used as a complexing agent for uniform deposition of the thin films. The elemental composition of the film was confirmed by energy dispersive analysis by X-ray (EDAX) technique. Structure and surface morphology of as-deposited films were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM), atomic force microscopy (AFM), respectively. XRD patterns reveal that as-deposited thin films were amorphous in nature; while the obtained precipitate powder was polycrystalline in nature. SEM results revealed that deposited ZnS material has {approx}120 {+-} 20 nm average grain size and the spherical grains are distributed over the entire glass substrate. Low surface roughness was found to be 2.7 nm from AFM studies. Transmission spectra indicate a high transmission coefficient ({approx}75%) with direct band gap energy equal to 3.72 eV while indirect band gap was found to be 3.45 eV. A photoluminescence (PL) study of the ZnS at room temperature (300 K) indicates a strong luminescence band at energy 2.02 eV.
Authors:
Sadekar, H K; [1]  Thin film and Nanotechnology Laboratory, Department of Physics, Dr. B.A.M. University, Aurangabad 431004 (M.S.) (India)]; Deshpande, N G; Gudage, Y G; Ghosh, A; Chavhan, S D; Gosavi, S R; [2]  Sharma, Ramphal [2] 
  1. Arts, Commerce and Science college, Sonai 414105 (M.S.) (India)
  2. Thin film and Nanotechnology Laboratory, Department of Physics, Dr. B.A.M. University, Aurangabad 431004 (M.S.) (India)
Publication Date:
Apr 03, 2008
Product Type:
Journal Article
Resource Relation:
Journal Name: Journal of Alloys and Compounds; Journal Volume: 453; Journal Issue: 1-2; Other Information: DOI: 10.1016/j.jallcom.2007.10.123; PII: S0925-8388(07)02091-9; Copyright (c) 2007 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved; Country of input: International Atomic Energy Agency (IAEA)
Subject:
36 MATERIALS SCIENCE; ATOMIC FORCE MICROSCOPY; CHELATING AGENTS; CRYSTAL STRUCTURE; DEPOSITION; EV RANGE 01-10; GLASS; GRAIN SIZE; MORPHOLOGY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; POLYCRYSTALS; PRECIPITATION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR MATERIALS; SPECTRA; SYNTHESIS; TEMPERATURE RANGE 0273-0400 K; THIN FILMS; TRANSMISSION; X RADIATION; X-RAY DIFFRACTION; ZINC SULFIDES
OSTI ID:
21048829
Country of Origin:
Netherlands
Language:
English
Other Identifying Numbers:
Journal ID: ISSN 0925-8388; JALCEU; TRN: NL08R2062060941
Availability:
Available from http://dx.doi.org/10.1016/j.jallcom.2007.10.123;INIS
Submitting Site:
NLN
Size:
page(s) 519-524
Announcement Date:
Aug 05, 2008

Journal Article:

Citation Formats

Sadekar, H K, Thin film and Nanotechnology Laboratory, Department of Physics, Dr. B.A.M. University, Aurangabad 431004 (M.S.) (India)], Deshpande, N G, Gudage, Y G, Ghosh, A, Chavhan, S D, Gosavi, S R, and Sharma, Ramphal. Growth, structural, optical and electrical study of ZnS thin films deposited by solution growth technique (SGT). Netherlands: N. p., 2008. Web.
Sadekar, H K, Thin film and Nanotechnology Laboratory, Department of Physics, Dr. B.A.M. University, Aurangabad 431004 (M.S.) (India)], Deshpande, N G, Gudage, Y G, Ghosh, A, Chavhan, S D, Gosavi, S R, & Sharma, Ramphal. Growth, structural, optical and electrical study of ZnS thin films deposited by solution growth technique (SGT). Netherlands.
Sadekar, H K, Thin film and Nanotechnology Laboratory, Department of Physics, Dr. B.A.M. University, Aurangabad 431004 (M.S.) (India)], Deshpande, N G, Gudage, Y G, Ghosh, A, Chavhan, S D, Gosavi, S R, and Sharma, Ramphal. 2008. "Growth, structural, optical and electrical study of ZnS thin films deposited by solution growth technique (SGT)." Netherlands.
@misc{etde_21048829,
title = {Growth, structural, optical and electrical study of ZnS thin films deposited by solution growth technique (SGT)}
author = {Sadekar, H K, Thin film and Nanotechnology Laboratory, Department of Physics, Dr. B.A.M. University, Aurangabad 431004 (M.S.) (India)], Deshpande, N G, Gudage, Y G, Ghosh, A, Chavhan, S D, Gosavi, S R, and Sharma, Ramphal}
abstractNote = {ZnS thin films have been deposited onto glass substrates at temperature 90 deg. C by solution growth technique (SGT). The deposition parameters were optimized. Triethanolamine (TEA) was used as a complexing agent for uniform deposition of the thin films. The elemental composition of the film was confirmed by energy dispersive analysis by X-ray (EDAX) technique. Structure and surface morphology of as-deposited films were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM), atomic force microscopy (AFM), respectively. XRD patterns reveal that as-deposited thin films were amorphous in nature; while the obtained precipitate powder was polycrystalline in nature. SEM results revealed that deposited ZnS material has {approx}120 {+-} 20 nm average grain size and the spherical grains are distributed over the entire glass substrate. Low surface roughness was found to be 2.7 nm from AFM studies. Transmission spectra indicate a high transmission coefficient ({approx}75%) with direct band gap energy equal to 3.72 eV while indirect band gap was found to be 3.45 eV. A photoluminescence (PL) study of the ZnS at room temperature (300 K) indicates a strong luminescence band at energy 2.02 eV.}
journal = {Journal of Alloys and Compounds}
issue = {1-2}
volume = {453}
place = {Netherlands}
year = {2008}
month = {Apr}
}