Abstract
ZnS thin films have been deposited onto glass substrates at temperature 90 deg. C by solution growth technique (SGT). The deposition parameters were optimized. Triethanolamine (TEA) was used as a complexing agent for uniform deposition of the thin films. The elemental composition of the film was confirmed by energy dispersive analysis by X-ray (EDAX) technique. Structure and surface morphology of as-deposited films were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM), atomic force microscopy (AFM), respectively. XRD patterns reveal that as-deposited thin films were amorphous in nature; while the obtained precipitate powder was polycrystalline in nature. SEM results revealed that deposited ZnS material has {approx}120 {+-} 20 nm average grain size and the spherical grains are distributed over the entire glass substrate. Low surface roughness was found to be 2.7 nm from AFM studies. Transmission spectra indicate a high transmission coefficient ({approx}75%) with direct band gap energy equal to 3.72 eV while indirect band gap was found to be 3.45 eV. A photoluminescence (PL) study of the ZnS at room temperature (300 K) indicates a strong luminescence band at energy 2.02 eV.
Sadekar, H K;
[1]
Thin film and Nanotechnology Laboratory, Department of Physics, Dr. B.A.M. University, Aurangabad 431004 (M.S.) (India)];
Deshpande, N G;
Gudage, Y G;
Ghosh, A;
Chavhan, S D;
Gosavi, S R;
[2]
Sharma, Ramphal
[2]
- Arts, Commerce and Science college, Sonai 414105 (M.S.) (India)
- Thin film and Nanotechnology Laboratory, Department of Physics, Dr. B.A.M. University, Aurangabad 431004 (M.S.) (India)
Citation Formats
Sadekar, H K, Thin film and Nanotechnology Laboratory, Department of Physics, Dr. B.A.M. University, Aurangabad 431004 (M.S.) (India)], Deshpande, N G, Gudage, Y G, Ghosh, A, Chavhan, S D, Gosavi, S R, and Sharma, Ramphal.
Growth, structural, optical and electrical study of ZnS thin films deposited by solution growth technique (SGT).
Netherlands: N. p.,
2008.
Web.
Sadekar, H K, Thin film and Nanotechnology Laboratory, Department of Physics, Dr. B.A.M. University, Aurangabad 431004 (M.S.) (India)], Deshpande, N G, Gudage, Y G, Ghosh, A, Chavhan, S D, Gosavi, S R, & Sharma, Ramphal.
Growth, structural, optical and electrical study of ZnS thin films deposited by solution growth technique (SGT).
Netherlands.
Sadekar, H K, Thin film and Nanotechnology Laboratory, Department of Physics, Dr. B.A.M. University, Aurangabad 431004 (M.S.) (India)], Deshpande, N G, Gudage, Y G, Ghosh, A, Chavhan, S D, Gosavi, S R, and Sharma, Ramphal.
2008.
"Growth, structural, optical and electrical study of ZnS thin films deposited by solution growth technique (SGT)."
Netherlands.
@misc{etde_21048829,
title = {Growth, structural, optical and electrical study of ZnS thin films deposited by solution growth technique (SGT)}
author = {Sadekar, H K, Thin film and Nanotechnology Laboratory, Department of Physics, Dr. B.A.M. University, Aurangabad 431004 (M.S.) (India)], Deshpande, N G, Gudage, Y G, Ghosh, A, Chavhan, S D, Gosavi, S R, and Sharma, Ramphal}
abstractNote = {ZnS thin films have been deposited onto glass substrates at temperature 90 deg. C by solution growth technique (SGT). The deposition parameters were optimized. Triethanolamine (TEA) was used as a complexing agent for uniform deposition of the thin films. The elemental composition of the film was confirmed by energy dispersive analysis by X-ray (EDAX) technique. Structure and surface morphology of as-deposited films were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM), atomic force microscopy (AFM), respectively. XRD patterns reveal that as-deposited thin films were amorphous in nature; while the obtained precipitate powder was polycrystalline in nature. SEM results revealed that deposited ZnS material has {approx}120 {+-} 20 nm average grain size and the spherical grains are distributed over the entire glass substrate. Low surface roughness was found to be 2.7 nm from AFM studies. Transmission spectra indicate a high transmission coefficient ({approx}75%) with direct band gap energy equal to 3.72 eV while indirect band gap was found to be 3.45 eV. A photoluminescence (PL) study of the ZnS at room temperature (300 K) indicates a strong luminescence band at energy 2.02 eV.}
journal = []
issue = {1-2}
volume = {453}
place = {Netherlands}
year = {2008}
month = {Apr}
}
title = {Growth, structural, optical and electrical study of ZnS thin films deposited by solution growth technique (SGT)}
author = {Sadekar, H K, Thin film and Nanotechnology Laboratory, Department of Physics, Dr. B.A.M. University, Aurangabad 431004 (M.S.) (India)], Deshpande, N G, Gudage, Y G, Ghosh, A, Chavhan, S D, Gosavi, S R, and Sharma, Ramphal}
abstractNote = {ZnS thin films have been deposited onto glass substrates at temperature 90 deg. C by solution growth technique (SGT). The deposition parameters were optimized. Triethanolamine (TEA) was used as a complexing agent for uniform deposition of the thin films. The elemental composition of the film was confirmed by energy dispersive analysis by X-ray (EDAX) technique. Structure and surface morphology of as-deposited films were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM), atomic force microscopy (AFM), respectively. XRD patterns reveal that as-deposited thin films were amorphous in nature; while the obtained precipitate powder was polycrystalline in nature. SEM results revealed that deposited ZnS material has {approx}120 {+-} 20 nm average grain size and the spherical grains are distributed over the entire glass substrate. Low surface roughness was found to be 2.7 nm from AFM studies. Transmission spectra indicate a high transmission coefficient ({approx}75%) with direct band gap energy equal to 3.72 eV while indirect band gap was found to be 3.45 eV. A photoluminescence (PL) study of the ZnS at room temperature (300 K) indicates a strong luminescence band at energy 2.02 eV.}
journal = []
issue = {1-2}
volume = {453}
place = {Netherlands}
year = {2008}
month = {Apr}
}