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Contribution to the theoretical and experimental study of the electron-volt effect in N-P junctions; Contribution a l'etude theorique et experimentale de l'effet electronvoltaique dans les jonctions N-P

Abstract

The proposed aim of this work is to study the behaviour of a semi-conducting junction under the action of {beta} radiation. These studies were directed on the one hand to direct conversion of the energy radiated by a radioactive source to electric energy usable by means of N-P junctions, and on the other hand to the kinetics of defects produced in the semi-conductor crystals by high energy {beta} rays. In the first part of this work, an attempt has been made to complete the earlier theories of the electron-volt effect in junctions by analysing the effect mathematically. This has led to a single equation containing the electrical and geometric parameters of the semi-conductor and of the junction, and the properties of the incident radiation. Apart from this, the diffusion current of the charge carriers created by the bombardment has been studied in more detail, taking into account all the factors which play a part in the expression of the efficiency of charge collection of a junction. In the second part, where experiments on the irradiation of N-P junctions have been carried out with a {sup 90}Sr-{sup 90}Y source, mention is made of the particular advantages of a gallium arsenide junction  More>>
Authors:
Nguyen Van, Dong [1] 
  1. Commissariat a l'Energie Atomique, Saclay (France). Centre d'Etudes Nucleaires
Publication Date:
Jul 15, 1959
Product Type:
Thesis/Dissertation
Report Number:
CEA-R-1443
Resource Relation:
Other Information: TH: These civil des telecommunications; 46 refs
Subject:
36 MATERIALS SCIENCE; 74 ATOMIC AND MOLECULAR PHYSICS; ANNEALING; ATOMIC DISPLACEMENTS; BETA PARTICLES; BETA SOURCES; BETAVOLTAIC CELLS; CRYSTAL LATTICES; ELECTRIC IMPEDANCE; ELECTRON BEAMS; ELECTRON-ATOM COLLISIONS; ELECTRON-HOLE COUPLING; ENERGY DEPENDENCE; FORBIDDEN TRANSITIONS; FRENKEL DEFECTS; MEV RANGE 01-10; P-N JUNCTIONS; POTENTIALS; RECOMBINATION; SELF-ABSORPTION; SUPERCONDUCTIVITY; THERMAL EQUILIBRIUM; VAN DE GRAAFF ACCELERATORS
OSTI ID:
20951793
Research Organizations:
CEA Saclay, 91 - Gif-sur-Yvette (France); Faculte des Sciences de l'Universite de Paris, 75 (France)
Country of Origin:
France
Language:
French
Other Identifying Numbers:
TRN: FR07R1443102019
Availability:
Available from INIS in electronic form
Submitting Site:
FRN
Size:
88 pages
Announcement Date:
Dec 21, 2007

Citation Formats

Nguyen Van, Dong. Contribution to the theoretical and experimental study of the electron-volt effect in N-P junctions; Contribution a l'etude theorique et experimentale de l'effet electronvoltaique dans les jonctions N-P. France: N. p., 1959. Web.
Nguyen Van, Dong. Contribution to the theoretical and experimental study of the electron-volt effect in N-P junctions; Contribution a l'etude theorique et experimentale de l'effet electronvoltaique dans les jonctions N-P. France.
Nguyen Van, Dong. 1959. "Contribution to the theoretical and experimental study of the electron-volt effect in N-P junctions; Contribution a l'etude theorique et experimentale de l'effet electronvoltaique dans les jonctions N-P." France.
@misc{etde_20951793,
title = {Contribution to the theoretical and experimental study of the electron-volt effect in N-P junctions; Contribution a l'etude theorique et experimentale de l'effet electronvoltaique dans les jonctions N-P}
author = {Nguyen Van, Dong}
abstractNote = {The proposed aim of this work is to study the behaviour of a semi-conducting junction under the action of {beta} radiation. These studies were directed on the one hand to direct conversion of the energy radiated by a radioactive source to electric energy usable by means of N-P junctions, and on the other hand to the kinetics of defects produced in the semi-conductor crystals by high energy {beta} rays. In the first part of this work, an attempt has been made to complete the earlier theories of the electron-volt effect in junctions by analysing the effect mathematically. This has led to a single equation containing the electrical and geometric parameters of the semi-conductor and of the junction, and the properties of the incident radiation. Apart from this, the diffusion current of the charge carriers created by the bombardment has been studied in more detail, taking into account all the factors which play a part in the expression of the efficiency of charge collection of a junction. In the second part, where experiments on the irradiation of N-P junctions have been carried out with a {sup 90}Sr-{sup 90}Y source, mention is made of the particular advantages of a gallium arsenide junction capable of operating at relatively high temperatures (in the region of 100 deg. C). The third part presents the study of defects created in a semi-conductor crystal by high-energy {beta} rays, according to the method of electron-volt effect. It is shown here that from a study of the degradation of the short-circuit current of the junction it may be possible to determine the recombination level and the probabilities of electron and hole capture, as from a study of the lifetime decay of minority carriers in a crystal of known type. Experiments on the bombardment of Ge junctions by 2 MeV electrons were performed with a Van de Graaff. Very clear anomalies of the electron-volt effect at 100 deg. K were observed. An attempt was made at interpretation of these anomalies in the junction, taking into account other phenomena which occur at low temperature. In the fourth part, results concerning the healing of the defects and protection measures against too energetic {beta} rays are described. A healing difference was observed between the lifetime and the conductivity. Finally, interesting results were obtained from experiments using a cadmium sulphide film to transform the {beta} particles of {sup 90}Sr-{sup 90}Y into photons. (author) [French] Le but propose dons le cadre de ce travail est d'etudier le comportement d'une jonction semi-conductrice sous l'action des rayons {beta}. L'etude a porte d'une part sur la conversion directe de l'energie rayonnee par une source radioactive en energie electrique utilisable a l'aide des jonctions N-P, et d'autre part sur la cinetique des defauts produits dans les cristaux de semi-conducteur par les rayons {beta} de grande energie. Dans la premiere partie du travail, on a essaye de completer les theories anterieures de l'effet electron-voltaique dans les jonctions en faisant une analyse mathematique de l'effet. Ceci a permis d'atteindre une equation unique dans laquelle figurent les parametres electriques et geometriques du semi-conducteur, de la jonction et les proprietes du rayonnement incident. D'autre part, on a etudie d'une maniere plus approfondie le courant de diffusion des porteurs de charge crees par le bombardement en tenant compte de tous les facteurs intervenant dans l'expression de l'efficacite de collection de charge d'une jonction. Dans la deuxieme partie, ou des experiences d'irradiation des jonctions N-P ont ete effectuees avec une source de {sup 90}Sr- {sup 90}Y, on a signale l'interet particulier d'une jonction d'arseniure de gallium susceptible de travailler a des temperatures relativement elevees (voisines de 100 deg. C). La troisieme partie presente l'etude des defauts crees dans un cristal de semi-conducteur par les rayons {beta} de grande energie, selon la methode de l'effet electron-voltaique. On a montre ici que l'etude de la degradation du courant de court-circuit de la jonction peut permettre de determiner le niveau de recombinaison et les probabilites de capture des electrons et des trous, au meme titre que l'etude du declin de la duree de vie des porteurs minoritaires dans un cristal de type connu. Des experiences de bombardement des jonctions de Ge par des electrons de 2 MeV ont ete realisees avec un Van de Graaf. Des anomalies tres nettes de l'effet electron-voltaique a 100 deg. K ont ete constatees. On a essaye d'interpreter ces anomalies de la jonction en tenant compte d'autres phenomenes intervenant a basse temperature. Dans la quatrieme partie, on decrit les resultats de guerison des defauts et les moyens de protection contre les rayons {beta} trop energiques. On a observe une difference de guerison entre la duree de vie et la conductivite. Enfin, des experiences utilisant une couche de sulfure de cadmium pour transformer les particules {beta} du {sup 90}Sr-{sup 90}Y en photons ont donne des resultats interessants. (auteur)}
place = {France}
year = {1959}
month = {Jul}
}