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Studies on the electrical properties of reactive DC magnetron-sputtered indium-doped silver oxide thin films: The role of oxygen

Abstract

Indium ({approx}10 at.%)-doped silver oxide (AIO) thin films have been prepared on glass substrates at room temperature (300 K) by reactive DC magnetron sputtering technique using an alloy target made of pure (99.99%) silver and indium (90:10 at.%) metals. The oxygen flow rates have been varied in the range 0.00-3.44 sccm during sputtering. The X-ray diffraction data on these indium-doped silver oxide films show polycrystalline nature. With increasing oxygen flow rate, the carrier concentration, the Hall mobility and the electron mean free path decrease. These films show a very low positive temperature coefficient of resistivity {approx}3.40x10{sup -8} ohm-cm/K. The work function values for these films (measured by Kelvin probe technique) are in the range 4.81-5.07 eV. The high electrical resistivity indicate that the films are in the island state (size effects). Calculations of the partial ionic charge (by Sanderson's theory) show that indium doping in silver oxide thin films enhance the ionicity.
Authors:
Subrahmanyam, A; [1]  Barik, Ullash Kumar [1] 
  1. Semiconductor Physics Laboratory, Department of Physics, Indian Institute of Technology Madras, Chennai 600036 (India)
Publication Date:
Mar 15, 2007
Product Type:
Journal Article
Resource Relation:
Journal Name: Physica. B, Condensed Matter; Journal Volume: 391; Journal Issue: 1; Other Information: DOI: 10.1016/j.physb.2006.08.046; PII: S0921-4526(06)01674-7; Copyright (c) 2006 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved; Country of input: International Atomic Energy Agency (IAEA)
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRONS; EV RANGE; INDIUM; INDIUM OXIDES; MEAN FREE PATH; OXYGEN; POLYCRYSTALS; SILVER; SILVER OXIDES; SPUTTERING; SUBSTRATES; TEMPERATURE COEFFICIENT; THIN FILMS; WORK FUNCTIONS; X-RAY DIFFRACTION
OSTI ID:
20926120
Country of Origin:
Netherlands
Language:
English
Other Identifying Numbers:
Journal ID: ISSN 0921-4526; PHYBE3; TRN: NL07T1475084888
Submitting Site:
NLN
Size:
page(s) 54-58
Announcement Date:
Oct 01, 2007

Citation Formats

Subrahmanyam, A, and Barik, Ullash Kumar. Studies on the electrical properties of reactive DC magnetron-sputtered indium-doped silver oxide thin films: The role of oxygen. Netherlands: N. p., 2007. Web. doi:10.1016/j.physb.2006.08.046.
Subrahmanyam, A, & Barik, Ullash Kumar. Studies on the electrical properties of reactive DC magnetron-sputtered indium-doped silver oxide thin films: The role of oxygen. Netherlands. doi:10.1016/j.physb.2006.08.046.
Subrahmanyam, A, and Barik, Ullash Kumar. 2007. "Studies on the electrical properties of reactive DC magnetron-sputtered indium-doped silver oxide thin films: The role of oxygen." Netherlands. doi:10.1016/j.physb.2006.08.046. https://www.osti.gov/servlets/purl/10.1016/j.physb.2006.08.046.
@misc{etde_20926120,
title = {Studies on the electrical properties of reactive DC magnetron-sputtered indium-doped silver oxide thin films: The role of oxygen}
author = {Subrahmanyam, A, and Barik, Ullash Kumar}
abstractNote = {Indium ({approx}10 at.%)-doped silver oxide (AIO) thin films have been prepared on glass substrates at room temperature (300 K) by reactive DC magnetron sputtering technique using an alloy target made of pure (99.99%) silver and indium (90:10 at.%) metals. The oxygen flow rates have been varied in the range 0.00-3.44 sccm during sputtering. The X-ray diffraction data on these indium-doped silver oxide films show polycrystalline nature. With increasing oxygen flow rate, the carrier concentration, the Hall mobility and the electron mean free path decrease. These films show a very low positive temperature coefficient of resistivity {approx}3.40x10{sup -8} ohm-cm/K. The work function values for these films (measured by Kelvin probe technique) are in the range 4.81-5.07 eV. The high electrical resistivity indicate that the films are in the island state (size effects). Calculations of the partial ionic charge (by Sanderson's theory) show that indium doping in silver oxide thin films enhance the ionicity.}
doi = {10.1016/j.physb.2006.08.046}
journal = {Physica. B, Condensed Matter}
issue = {1}
volume = {391}
place = {Netherlands}
year = {2007}
month = {Mar}
}