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High-k dielectrics as bioelectronic interface for field-effect transistors

Abstract

Ion-sensitive field-effect transistors (ISFETs) are employed as bioelectronic sensors for the cell-transistor coupling and for the detection of DNA sequences. For these applications, thermally grown SiO{sub 2} films are used as standard gate dielectric. In the first part of this dissertation, the suitability of high-k dielectrics was studied to increase the gate capacitance and hence the signal-to-noise ratio of bioelectronic ISFETs: Upon culturing primary rat neurons on the corresponding high-k dielectrics, Al{sub 2}O{sub 3}, yttria stabilised zirkonia (YSZ), DyScO{sub 3}, CeO{sub 2}, LaAlO{sub 3}, GdScO{sub 3} and LaScO{sub 3} proved to be biocompatible substrates. Comprehensive electrical and electrochemical current-voltage measurements and capacitance-voltage measurements were performed for the determination of the dielectric properties of the high-k dielectrics. In the second part of the dissertation, standard SiO{sub 2} ISFETs with lower input capacitance and high-k dielectric Al{sub 2}O{sub 3}, YSZ und DyScO{sub 3} ISFETs were comprehensively characterised and compared with each other regarding their signal-to-noise ratio, their ion sensitivity and their drift behaviour. The ion sensitivity measurements showed that the YSZ ISFETs were considerably more sensitive to K{sup +} and Na{sup +} ions than the SiO{sub 2}, Al{sub 2}O{sub 3} und DyScO{sub 3} ISFETs. In the final third part of the dissertation,  More>>
Authors:
Publication Date:
Mar 15, 2007
Product Type:
Thesis/Dissertation
Report Number:
Juel-4247
Resource Relation:
Other Information: TH: Diss. (Dr.rer.nat.)
Subject:
36 MATERIALS SCIENCE; DIELECTRIC MATERIALS; FIELD EFFECT TRANSISTORS; POTASSIUM IONS; DNA SEQUENCING; DNA; THIN FILMS; CAPACITANCE; SIGNAL-TO-NOISE RATIO; RATS; NERVE CELLS; SUBSTRATES; ELECTRIC POTENTIAL; PERMITTIVITY; SENSITIVITY; SILICON OXIDES; ALUMINIUM OXIDES; YTTRIUM OXIDES; CERIUM OXIDES; ZIRCONIUM OXIDES; DYSPROSIUM OXIDES; SCANDIUM OXIDES; ALUMINATES; LANTHANUM OXIDES; GADOLINIUM OXIDES; ELECTRIC CONDUCTIVITY; HYSTERESIS; BREAKDOWN; SODIUM IONS; SURFACES
OSTI ID:
20903017
Research Organizations:
Forschungszentrum Juelich (Germany). Institute of Bio- and Nanosystems (IBN), Bioelectronics (IBN-2); Rheinisch-Westfaelische Technische Hochschule Aachen (Germany). Fakultaet fuer Mathematik, Informatik und Naturwissenschaften
Country of Origin:
Germany
Language:
English
Other Identifying Numbers:
Other: ISSN 0944-2952; TRN: DE07G8907
Availability:
Commercial reproduction prohibited; OSTI as DE20903017
Submitting Site:
DE
Size:
143 pages
Announcement Date:
Sep 06, 2007

Citation Formats

Borstlap, D. High-k dielectrics as bioelectronic interface for field-effect transistors. Germany: N. p., 2007. Web.
Borstlap, D. High-k dielectrics as bioelectronic interface for field-effect transistors. Germany.
Borstlap, D. 2007. "High-k dielectrics as bioelectronic interface for field-effect transistors." Germany.
@misc{etde_20903017,
title = {High-k dielectrics as bioelectronic interface for field-effect transistors}
author = {Borstlap, D}
abstractNote = {Ion-sensitive field-effect transistors (ISFETs) are employed as bioelectronic sensors for the cell-transistor coupling and for the detection of DNA sequences. For these applications, thermally grown SiO{sub 2} films are used as standard gate dielectric. In the first part of this dissertation, the suitability of high-k dielectrics was studied to increase the gate capacitance and hence the signal-to-noise ratio of bioelectronic ISFETs: Upon culturing primary rat neurons on the corresponding high-k dielectrics, Al{sub 2}O{sub 3}, yttria stabilised zirkonia (YSZ), DyScO{sub 3}, CeO{sub 2}, LaAlO{sub 3}, GdScO{sub 3} and LaScO{sub 3} proved to be biocompatible substrates. Comprehensive electrical and electrochemical current-voltage measurements and capacitance-voltage measurements were performed for the determination of the dielectric properties of the high-k dielectrics. In the second part of the dissertation, standard SiO{sub 2} ISFETs with lower input capacitance and high-k dielectric Al{sub 2}O{sub 3}, YSZ und DyScO{sub 3} ISFETs were comprehensively characterised and compared with each other regarding their signal-to-noise ratio, their ion sensitivity and their drift behaviour. The ion sensitivity measurements showed that the YSZ ISFETs were considerably more sensitive to K{sup +} and Na{sup +} ions than the SiO{sub 2}, Al{sub 2}O{sub 3} und DyScO{sub 3} ISFETs. In the final third part of the dissertation, bioelectronic experiments were performed with the high-k ISFETs. The shape of the signals, which were measured from HL-1 cells with YSZ ISFETs, differed considerably from the corresponding measurements with SiO{sub 2} and DyScO{sub 3} ISFETs: After the onset of the K{sup +} current, the action potentials measured with YSZ ISFETs showed a strong drift in the direction opposite to the K{sup +} current signal. First coupling experiments between HEK 293 cells, which were transfected with a K{sup +} ion channel, and YSZ ISFETs affirmed the assumption from the HL-1 experiments that the characteristic drift behaviour of YSZ ISFETs influences the measured signal shapes. (orig.)}
place = {Germany}
year = {2007}
month = {Mar}
}