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Applications of positron depth profiling

Abstract

In this thesis some contributions of the positron-depth profiling technique to materials science have been described. Following studies are carried out: Positron-annihilation measurements on neon-implanted steel; Void creation in silicon by helium implantation; Density of vacancy-type defects present in amorphous silicon prepared by ion implantation; Measurements of other types of amorphous silicon; Epitaxial cobalt disilicide prepared by cobalt outdiffusion. Positron-annihilation experiments on low-pressure CVD silicon-nitride films. (orig./MM).
Authors:
Publication Date:
Dec 23, 1993
Product Type:
Thesis/Dissertation
Report Number:
INIS-mf-15146
Reference Number:
SCA: 665100; PA: AIX-27:030540; EDB-96:069309; NTS-96:017777; SN: 96001571247
Resource Relation:
Other Information: TH: Proefschrift.; PBD: 23 Dec 1993
Subject:
66 PHYSICS; COBALT SILICIDES; CRYSTAL DEFECTS; POSITRON BEAMS; SILICON; SILICON NITRIDES; STEELS; AMORPHOUS STATE; ANNIHILATION; ION IMPLANTATION; PENETRATION DEPTH; SURFACES
OSTI ID:
208766
Research Organizations:
Technische Univ. Delft (Netherlands). Interfacultair Reactor Inst.
Country of Origin:
Netherlands
Language:
English
Other Identifying Numbers:
Other: ON: DE96620079; ISBN 90-73861-15-2; TRN: NL96F3858030540
Availability:
INIS; OSTI as DE96620079
Submitting Site:
NLN
Size:
190 p.
Announcement Date:
Apr 24, 1996

Citation Formats

Hakvoort, R A. Applications of positron depth profiling. Netherlands: N. p., 1993. Web.
Hakvoort, R A. Applications of positron depth profiling. Netherlands.
Hakvoort, R A. 1993. "Applications of positron depth profiling." Netherlands.
@misc{etde_208766,
title = {Applications of positron depth profiling}
author = {Hakvoort, R A}
abstractNote = {In this thesis some contributions of the positron-depth profiling technique to materials science have been described. Following studies are carried out: Positron-annihilation measurements on neon-implanted steel; Void creation in silicon by helium implantation; Density of vacancy-type defects present in amorphous silicon prepared by ion implantation; Measurements of other types of amorphous silicon; Epitaxial cobalt disilicide prepared by cobalt outdiffusion. Positron-annihilation experiments on low-pressure CVD silicon-nitride films. (orig./MM).}
place = {Netherlands}
year = {1993}
month = {Dec}
}