Abstract
In this thesis some contributions of the positron-depth profiling technique to materials science have been described. Following studies are carried out: Positron-annihilation measurements on neon-implanted steel; Void creation in silicon by helium implantation; Density of vacancy-type defects present in amorphous silicon prepared by ion implantation; Measurements of other types of amorphous silicon; Epitaxial cobalt disilicide prepared by cobalt outdiffusion. Positron-annihilation experiments on low-pressure CVD silicon-nitride films. (orig./MM).
Citation Formats
Hakvoort, R A.
Applications of positron depth profiling.
Netherlands: N. p.,
1993.
Web.
Hakvoort, R A.
Applications of positron depth profiling.
Netherlands.
Hakvoort, R A.
1993.
"Applications of positron depth profiling."
Netherlands.
@misc{etde_208766,
title = {Applications of positron depth profiling}
author = {Hakvoort, R A}
abstractNote = {In this thesis some contributions of the positron-depth profiling technique to materials science have been described. Following studies are carried out: Positron-annihilation measurements on neon-implanted steel; Void creation in silicon by helium implantation; Density of vacancy-type defects present in amorphous silicon prepared by ion implantation; Measurements of other types of amorphous silicon; Epitaxial cobalt disilicide prepared by cobalt outdiffusion. Positron-annihilation experiments on low-pressure CVD silicon-nitride films. (orig./MM).}
place = {Netherlands}
year = {1993}
month = {Dec}
}
title = {Applications of positron depth profiling}
author = {Hakvoort, R A}
abstractNote = {In this thesis some contributions of the positron-depth profiling technique to materials science have been described. Following studies are carried out: Positron-annihilation measurements on neon-implanted steel; Void creation in silicon by helium implantation; Density of vacancy-type defects present in amorphous silicon prepared by ion implantation; Measurements of other types of amorphous silicon; Epitaxial cobalt disilicide prepared by cobalt outdiffusion. Positron-annihilation experiments on low-pressure CVD silicon-nitride films. (orig./MM).}
place = {Netherlands}
year = {1993}
month = {Dec}
}