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Regularities of radiation defects build up on oxide materials surface; Zakonomernosti nakopleniya radiatsionnykh defektov na poverkhnosti oksidnykh materialov

Conference:

Abstract

Analysis of experimental data by radiation defects study on different oxide elements (silicon, beryllium, aluminium, rare earth elements) irradiated by the photo-, gamma-, neutron-, alpha- radiation, protons and helium ions show, that gas adsorption process on the surface centers and radiation defects build up in metal oxide correlated between themselves. These processes were described by the equivalent kinetic equations for analysis of radiation defects build up in the different metal oxides. It was revealed in the result of the analysis: number of radiation defects are droningly increasing up to limit value with the treatment temperature growth. Constant of radicals death at ionizing radiation increases as well. Amount of surface defects in different oxides defining absorbing activity of these materials looks as: silicon oxide{yields}beryllium oxide{yields}aluminium oxide. So it was found, that most optimal material for absorbing system preparation is silicon oxide by it power intensity and berylium oxide by it adsorption efficiency.
Authors:
Bitenbaev, M I; Polyakov, A I; [1]  Tuseev, T [2] 
  1. Fiziko-Tekhnicheskij Inst., Almaty (Kazakhstan)
  2. Inst. Yadernoj Fiziki, Almaty (Kazakhstan)
Publication Date:
Jul 01, 2005
Product Type:
Conference
Resource Relation:
Conference: 5. International conference 'Nuclear and Radiation Physics', 5. Mezhdunarodnaya konferentsiya 'Yadernaya i Radiatsionnaya Fizika', Almaty (Kazakhstan), 26-29 Sep 2005; Related Information: In: Abstracts of 5. International conference 'Nuclear and Radiation Physics', 658 pages.
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALPHA PARTICLES; ALUMINIUM OXIDES; BERYLLIUM OXIDES; CRYSTAL DEFECTS; GAMMA RADIATION; HELIUM IONS; IONIZING RADIATIONS; NEUTRONS; PHOTOLYSIS; PHYSICAL RADIATION EFFECTS; PROTONS; SILICON OXIDES; SURFACES
OSTI ID:
20817518
Research Organizations:
Natsional'nyj Yadernyj Tsentr Respubliki Kazakhstan, Kurchatov (Kazakhstan); Inst. Yadernoj Fiziki Natsional'nogo Yadernogoj Tsentra Respubliki Kazakhstan, Almaty (Kazakhstan)
Country of Origin:
Kazakstan (Kazakhstan)
Language:
Russian
Other Identifying Numbers:
Other: ISBN 9965-675-22-8; TRN: KZ0604070117637
Submitting Site:
INIS
Size:
page(s) 330-331
Announcement Date:
Dec 30, 2006

Conference:

Citation Formats

Bitenbaev, M I, Polyakov, A I, and Tuseev, T. Regularities of radiation defects build up on oxide materials surface; Zakonomernosti nakopleniya radiatsionnykh defektov na poverkhnosti oksidnykh materialov. Kazakstan (Kazakhstan): N. p., 2005. Web.
Bitenbaev, M I, Polyakov, A I, & Tuseev, T. Regularities of radiation defects build up on oxide materials surface; Zakonomernosti nakopleniya radiatsionnykh defektov na poverkhnosti oksidnykh materialov. Kazakstan (Kazakhstan).
Bitenbaev, M I, Polyakov, A I, and Tuseev, T. 2005. "Regularities of radiation defects build up on oxide materials surface; Zakonomernosti nakopleniya radiatsionnykh defektov na poverkhnosti oksidnykh materialov." Kazakstan (Kazakhstan).
@misc{etde_20817518,
title = {Regularities of radiation defects build up on oxide materials surface; Zakonomernosti nakopleniya radiatsionnykh defektov na poverkhnosti oksidnykh materialov}
author = {Bitenbaev, M I, Polyakov, A I, and Tuseev, T}
abstractNote = {Analysis of experimental data by radiation defects study on different oxide elements (silicon, beryllium, aluminium, rare earth elements) irradiated by the photo-, gamma-, neutron-, alpha- radiation, protons and helium ions show, that gas adsorption process on the surface centers and radiation defects build up in metal oxide correlated between themselves. These processes were described by the equivalent kinetic equations for analysis of radiation defects build up in the different metal oxides. It was revealed in the result of the analysis: number of radiation defects are droningly increasing up to limit value with the treatment temperature growth. Constant of radicals death at ionizing radiation increases as well. Amount of surface defects in different oxides defining absorbing activity of these materials looks as: silicon oxide{yields}beryllium oxide{yields}aluminium oxide. So it was found, that most optimal material for absorbing system preparation is silicon oxide by it power intensity and berylium oxide by it adsorption efficiency.}
place = {Kazakstan (Kazakhstan)}
year = {2005}
month = {Jul}
}