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Application of in-plane x-ray diffraction technique for residual stress measurement of TiN film/WC-Co alloy

Abstract

An in-plane X-ray diffraction technique was used to measure the residual stress of a CVD (chemical vapor deposition) TiN-coated WC-Co alloy. We could obtain the diffraction pattern from a thin film layer, eliminating that of the substrate. In the case of a conventional X-ray diffractometer, the X-ray penetration depth is about few {mu}m. However, for a grazing incidence beam it is only 0.2{mu}m. Depth profiles of residual stress in TiN film layer were evaluated by the present method and the conventional sin{sup 2}{psi} technique. We concluded that the in-plane diffraction technique enables us to determine the residual stress in a DVD-TiN film having an oriented texture. It was found that the residual tensile stress generated a mismatch of the coefficient of thermal expansion between the film and the substrate. (author)
Authors:
Takago, Shigeki; Yasui, Haruyuki; Awazu, Kaoru; [1]  Sasaki, Toshihiko; Hirose, Yukio; [2]  Sakurai, Kenji [3] 
  1. Industrial Research Inst. of Ishikawa, Kanazawa, Ishikawa (Japan)
  2. Kanazawa Univ., Dept. of Materials Science and Engineering, Kanazawa, Ishikawa (Japan)
  3. National Inst. for Materials Science, Tsukuba, Ibaraki (Japan)
Publication Date:
Jun 15, 2006
Product Type:
Journal Article
Resource Relation:
Journal Name: Bunseki Kagaku (Japan Analyst); Journal Volume: 55; Journal Issue: 6; Other Information: 16 refs., 8 figs., 2 tabs
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CERMETS; CHEMICAL VAPOR DEPOSITION; COBALT ALLOYS; FILMS; POISSON RATIO; RESIDUAL STRESSES; STRAINS; SURFACE COATING; TENSILE PROPERTIES; TITANIUM NITRIDES; TUNGSTEN CARBIDES; X-RAY DIFFRACTION; YOUNG MODULUS
OSTI ID:
20791737
Country of Origin:
Japan
Language:
Japanese
Other Identifying Numbers:
Journal ID: ISSN 0525-1931; BNSKAK; TRN: JP0602983093356
Submitting Site:
INIS
Size:
page(s) 405-410
Announcement Date:
Dec 18, 2006

Citation Formats

Takago, Shigeki, Yasui, Haruyuki, Awazu, Kaoru, Sasaki, Toshihiko, Hirose, Yukio, and Sakurai, Kenji. Application of in-plane x-ray diffraction technique for residual stress measurement of TiN film/WC-Co alloy. Japan: N. p., 2006. Web. doi:10.2116/bunsekikagaku.55.405.
Takago, Shigeki, Yasui, Haruyuki, Awazu, Kaoru, Sasaki, Toshihiko, Hirose, Yukio, & Sakurai, Kenji. Application of in-plane x-ray diffraction technique for residual stress measurement of TiN film/WC-Co alloy. Japan. doi:10.2116/bunsekikagaku.55.405.
Takago, Shigeki, Yasui, Haruyuki, Awazu, Kaoru, Sasaki, Toshihiko, Hirose, Yukio, and Sakurai, Kenji. 2006. "Application of in-plane x-ray diffraction technique for residual stress measurement of TiN film/WC-Co alloy." Japan. doi:10.2116/bunsekikagaku.55.405. https://www.osti.gov/servlets/purl/10.2116/bunsekikagaku.55.405.
@misc{etde_20791737,
title = {Application of in-plane x-ray diffraction technique for residual stress measurement of TiN film/WC-Co alloy}
author = {Takago, Shigeki, Yasui, Haruyuki, Awazu, Kaoru, Sasaki, Toshihiko, Hirose, Yukio, and Sakurai, Kenji}
abstractNote = {An in-plane X-ray diffraction technique was used to measure the residual stress of a CVD (chemical vapor deposition) TiN-coated WC-Co alloy. We could obtain the diffraction pattern from a thin film layer, eliminating that of the substrate. In the case of a conventional X-ray diffractometer, the X-ray penetration depth is about few {mu}m. However, for a grazing incidence beam it is only 0.2{mu}m. Depth profiles of residual stress in TiN film layer were evaluated by the present method and the conventional sin{sup 2}{psi} technique. We concluded that the in-plane diffraction technique enables us to determine the residual stress in a DVD-TiN film having an oriented texture. It was found that the residual tensile stress generated a mismatch of the coefficient of thermal expansion between the film and the substrate. (author)}
doi = {10.2116/bunsekikagaku.55.405}
journal = {Bunseki Kagaku (Japan Analyst)}
issue = {6}
volume = {55}
place = {Japan}
year = {2006}
month = {Jun}
}