Abstract
ZnO/CdSe/CuSCN extremely thin absorber (eta)-solar cells based on ZnO nano-wires have been successfully realized using easily accessible electrochemical and solution deposition techniques. An n-type ZnO film consisting of free-standing single crystal nano-wires several microns high and 100-200 nm in diameter was-deposited on a conducting glass (SnO{sub 2}:F) substrate covered by a thin spray pyrolysis ZnO electronic blocking layer. A 30-40-nm-thin layer of CdSe absorber was electrodeposited, coating the ZnO nano-wires. The voids between the ZnO/CdSe nano-wires were filled with p-type CuSCN; the entire assembly formed a p-i-n junction. The ZnO/CdSe nano-wire layer exhibited a high light-trapping effect, with an effective absorbance of {approx}89% and effective reflectance of {approx}8% in the 400-800 nm region of the solar spectrum (AM1.5). The effects of an annealing process on the CdSe grain size and on the energy conversion efficiency of the eta-solar cell have been analyzed. The obtained efficiencies, for cells with annealed CdSe (1.5-2.3%) show that the ZnO/CdSe/CuSCN nano-heterostructure is an interesting option for developing new solar cell devices. (authors)
Tena-Zaera, R;
Ryan, M A;
Abou, Katty;
Hodes, G;
Bastide, St;
Levy-Clement, C;
[1]
Tena-Zaera, R;
[2]
Ryan, M A;
[3]
Hodes, G
[4]
- LCMTR, Institut des sciences chimiques Seine-Amont, CNRS, 94 - Thiais (France)
- Valancia Univ., Dept. Fisica Aplicada i Electromagnetisme (Spain)
- Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA (United States)
- Weizmann Institute of Science, Dept. of Materials and Interfaces, Rehovot (Israel)
Citation Formats
Tena-Zaera, R, Ryan, M A, Abou, Katty, Hodes, G, Bastide, St, Levy-Clement, C, Tena-Zaera, R, Ryan, M A, and Hodes, G.
Fabrication and characterization of ZnO nano wires/Cd Se/CuSCN eta-solar cell.
France: N. p.,
2006.
Web.
doi:10.1016/J.CRCI.2005.03.034>.
Tena-Zaera, R, Ryan, M A, Abou, Katty, Hodes, G, Bastide, St, Levy-Clement, C, Tena-Zaera, R, Ryan, M A, & Hodes, G.
Fabrication and characterization of ZnO nano wires/Cd Se/CuSCN eta-solar cell.
France.
https://doi.org/10.1016/J.CRCI.2005.03.034>
Tena-Zaera, R, Ryan, M A, Abou, Katty, Hodes, G, Bastide, St, Levy-Clement, C, Tena-Zaera, R, Ryan, M A, and Hodes, G.
2006.
"Fabrication and characterization of ZnO nano wires/Cd Se/CuSCN eta-solar cell."
France.
https://doi.org/10.1016/J.CRCI.2005.03.034>.
@misc{etde_20783983,
title = {Fabrication and characterization of ZnO nano wires/Cd Se/CuSCN eta-solar cell}
author = {Tena-Zaera, R, Ryan, M A, Abou, Katty, Hodes, G, Bastide, St, Levy-Clement, C, Tena-Zaera, R, Ryan, M A, and Hodes, G}
abstractNote = {ZnO/CdSe/CuSCN extremely thin absorber (eta)-solar cells based on ZnO nano-wires have been successfully realized using easily accessible electrochemical and solution deposition techniques. An n-type ZnO film consisting of free-standing single crystal nano-wires several microns high and 100-200 nm in diameter was-deposited on a conducting glass (SnO{sub 2}:F) substrate covered by a thin spray pyrolysis ZnO electronic blocking layer. A 30-40-nm-thin layer of CdSe absorber was electrodeposited, coating the ZnO nano-wires. The voids between the ZnO/CdSe nano-wires were filled with p-type CuSCN; the entire assembly formed a p-i-n junction. The ZnO/CdSe nano-wire layer exhibited a high light-trapping effect, with an effective absorbance of {approx}89% and effective reflectance of {approx}8% in the 400-800 nm region of the solar spectrum (AM1.5). The effects of an annealing process on the CdSe grain size and on the energy conversion efficiency of the eta-solar cell have been analyzed. The obtained efficiencies, for cells with annealed CdSe (1.5-2.3%) show that the ZnO/CdSe/CuSCN nano-heterostructure is an interesting option for developing new solar cell devices. (authors)}
doi = {10.1016/J.CRCI.2005.03.034>}
journal = []
issue = {5-6t.9}
place = {France}
year = {2006}
month = {May}
}
title = {Fabrication and characterization of ZnO nano wires/Cd Se/CuSCN eta-solar cell}
author = {Tena-Zaera, R, Ryan, M A, Abou, Katty, Hodes, G, Bastide, St, Levy-Clement, C, Tena-Zaera, R, Ryan, M A, and Hodes, G}
abstractNote = {ZnO/CdSe/CuSCN extremely thin absorber (eta)-solar cells based on ZnO nano-wires have been successfully realized using easily accessible electrochemical and solution deposition techniques. An n-type ZnO film consisting of free-standing single crystal nano-wires several microns high and 100-200 nm in diameter was-deposited on a conducting glass (SnO{sub 2}:F) substrate covered by a thin spray pyrolysis ZnO electronic blocking layer. A 30-40-nm-thin layer of CdSe absorber was electrodeposited, coating the ZnO nano-wires. The voids between the ZnO/CdSe nano-wires were filled with p-type CuSCN; the entire assembly formed a p-i-n junction. The ZnO/CdSe nano-wire layer exhibited a high light-trapping effect, with an effective absorbance of {approx}89% and effective reflectance of {approx}8% in the 400-800 nm region of the solar spectrum (AM1.5). The effects of an annealing process on the CdSe grain size and on the energy conversion efficiency of the eta-solar cell have been analyzed. The obtained efficiencies, for cells with annealed CdSe (1.5-2.3%) show that the ZnO/CdSe/CuSCN nano-heterostructure is an interesting option for developing new solar cell devices. (authors)}
doi = {10.1016/J.CRCI.2005.03.034>}
journal = []
issue = {5-6t.9}
place = {France}
year = {2006}
month = {May}
}