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SiO{sub 2} on silicon: behavior under heavy ion irradiation; SiO{sub 2} sur silicium: comportement sous irradiation avec des ions lourds

Abstract

Heavy ion irradiation was performed on a-SiO{sub 2} layers deposited on Si. Damage of the surface was studied by means of Atomic Force Microscopy. Hillocks appear for an electronic stopping power higher than 16 keV/nm. The height of the hillocks decreases with the thickness of the oxide layer. Infrared Spectroscopy studies show that the damage threshold for a-SiO{sub 2} is at an electronic stopping power of 2 keV/nm. Therefore it is probable that the origin of the hillocks comes from the silicon layer. This could be explain within the frame of thermal spike model. The theoretical thresholds are 8 keV/nm and 1.8 keV/nm for silicon and a-SiO{sub 2} respectively. Chemical etching after irradiation gives a technical possibility to create nano-pits, whose size and shape can be controlled. Additionally, these structures allowed to determine the AFM tip radius. (author)
Authors:
Publication Date:
Mar 15, 2004
Product Type:
Thesis/Dissertation
Report Number:
FRNC-TH-6266
Resource Relation:
Other Information: TH: These milieux denses et materiaux
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ATOMIC FORCE MICROSCOPY; ELLIPSOMETRY; ETCHING; HEAVY IONS; INFRARED SPECTRA; NANOSTRUCTURES; RESEARCH PROGRAMS; SCANNING ELECTRON MICROSCOPY; SILICON; SILICON OXIDES; THERMAL SPIKES; THICKNESS
OSTI ID:
20726997
Research Organizations:
Caen Univ., 14 (France)
Country of Origin:
France
Language:
French
Other Identifying Numbers:
TRN: FR0503963038442
Availability:
Available from INIS in electronic form
Submitting Site:
FRN
Size:
181 pages
Announcement Date:
May 30, 2006

Citation Formats

Rotaru, C. SiO{sub 2} on silicon: behavior under heavy ion irradiation; SiO{sub 2} sur silicium: comportement sous irradiation avec des ions lourds. France: N. p., 2004. Web.
Rotaru, C. SiO{sub 2} on silicon: behavior under heavy ion irradiation; SiO{sub 2} sur silicium: comportement sous irradiation avec des ions lourds. France.
Rotaru, C. 2004. "SiO{sub 2} on silicon: behavior under heavy ion irradiation; SiO{sub 2} sur silicium: comportement sous irradiation avec des ions lourds." France.
@misc{etde_20726997,
title = {SiO{sub 2} on silicon: behavior under heavy ion irradiation; SiO{sub 2} sur silicium: comportement sous irradiation avec des ions lourds}
author = {Rotaru, C}
abstractNote = {Heavy ion irradiation was performed on a-SiO{sub 2} layers deposited on Si. Damage of the surface was studied by means of Atomic Force Microscopy. Hillocks appear for an electronic stopping power higher than 16 keV/nm. The height of the hillocks decreases with the thickness of the oxide layer. Infrared Spectroscopy studies show that the damage threshold for a-SiO{sub 2} is at an electronic stopping power of 2 keV/nm. Therefore it is probable that the origin of the hillocks comes from the silicon layer. This could be explain within the frame of thermal spike model. The theoretical thresholds are 8 keV/nm and 1.8 keV/nm for silicon and a-SiO{sub 2} respectively. Chemical etching after irradiation gives a technical possibility to create nano-pits, whose size and shape can be controlled. Additionally, these structures allowed to determine the AFM tip radius. (author)}
place = {France}
year = {2004}
month = {Mar}
}