You need JavaScript to view this

Contribution to the study of the behaviour of silicon planar transistors exposed to the {sup 60}Co {gamma} rays; Contribution a l'etude du comportement des transistors silicium a structure plane soumis aux rayons {gamma} du {sup 60}Co

Abstract

This report gives an account of studies carried out on bipolar silicon planar transistors irradiated by {sup 60}Co {gamma} rays. The author describes the interactions on the matter of the different types of particles and he gives a brief bibliographical recall of foreign studies. The technological structure of the planar transistors is then described in order to help the understanding of the phenomena, general comments are made about the choice of measured parameters and on the statistical interpretation of results. An automatic instrument for the measurement of the gain is described and the reproducibility of the results is stated The complexity of the problem and the difficulty to predict the behaviour of the semiconductors components are clearly shown. It is stated that the observed dispersions depend on: - the electrical bias during irradiation - the injection level in the emitter-base junction during the measurement - the manufacturer for a given type - the instantaneous dose rate - the geometry used The problem is then examined from the reliability point of view and methods are given to evaluate the reliability for a given dose - 'Worst case' method - moment method - Monte Carlo method. (author) [French] Ce rapport rend compte  More>>
Authors:
Le Ber, J [1] 
  1. Commissariat a l'Energie Atomique, Saclay (France). Centre d'Etudes Nucleaires
Publication Date:
May 15, 1967
Product Type:
Thesis/Dissertation
Report Number:
CEA-R-3313
Resource Relation:
Other Information: TH: These sciences; 53 refs
Subject:
42 ENGINEERING; COBALT 60; GAMMA RADIATION; MATERIALS TESTING; PHYSICAL RADIATION EFFECTS; RELIABILITY; SILICON; STATISTICS; SYSTEMS ANALYSIS; TRANSISTORS
OSTI ID:
20726949
Research Organizations:
CEA Saclay, 91 - Gif-sur-Yvette (France); Faculte des Sciences de Paris, Centre d'Orsay, 91 (France)
Country of Origin:
France
Language:
French
Other Identifying Numbers:
TRN: FR06R3313038394
Availability:
Available from INIS in electronic form
Submitting Site:
FRN
Size:
[67] pages
Announcement Date:
May 24, 2006

Citation Formats

Le Ber, J. Contribution to the study of the behaviour of silicon planar transistors exposed to the {sup 60}Co {gamma} rays; Contribution a l'etude du comportement des transistors silicium a structure plane soumis aux rayons {gamma} du {sup 60}Co. France: N. p., 1967. Web.
Le Ber, J. Contribution to the study of the behaviour of silicon planar transistors exposed to the {sup 60}Co {gamma} rays; Contribution a l'etude du comportement des transistors silicium a structure plane soumis aux rayons {gamma} du {sup 60}Co. France.
Le Ber, J. 1967. "Contribution to the study of the behaviour of silicon planar transistors exposed to the {sup 60}Co {gamma} rays; Contribution a l'etude du comportement des transistors silicium a structure plane soumis aux rayons {gamma} du {sup 60}Co." France.
@misc{etde_20726949,
title = {Contribution to the study of the behaviour of silicon planar transistors exposed to the {sup 60}Co {gamma} rays; Contribution a l'etude du comportement des transistors silicium a structure plane soumis aux rayons {gamma} du {sup 60}Co}
author = {Le Ber, J}
abstractNote = {This report gives an account of studies carried out on bipolar silicon planar transistors irradiated by {sup 60}Co {gamma} rays. The author describes the interactions on the matter of the different types of particles and he gives a brief bibliographical recall of foreign studies. The technological structure of the planar transistors is then described in order to help the understanding of the phenomena, general comments are made about the choice of measured parameters and on the statistical interpretation of results. An automatic instrument for the measurement of the gain is described and the reproducibility of the results is stated The complexity of the problem and the difficulty to predict the behaviour of the semiconductors components are clearly shown. It is stated that the observed dispersions depend on: - the electrical bias during irradiation - the injection level in the emitter-base junction during the measurement - the manufacturer for a given type - the instantaneous dose rate - the geometry used The problem is then examined from the reliability point of view and methods are given to evaluate the reliability for a given dose - 'Worst case' method - moment method - Monte Carlo method. (author) [French] Ce rapport rend compte du travail effectue sur les transistors bipolaires au silicium irradies au rayons {gamma} du cobalt 60. On passe en revue les mecanismes d'interaction des differents rayonnements avec la matiere et on fait un bref rappel bibliographique des etudes effectuees a l'etranger. On decrit ensuite la structure technologique du transistor pour aider a la comprehension des phenomenes, puis on donne des generalites sur le choix des parametres mesures et l'interpretation statistique des resultats. On decrit l'ensemble du systeme de mesure de gain et on s'attache a montrer la reproductibilite des mesures. Les resultats experimentaux mentionnes etablissent clairement la complexite du probleme et la difficulte qu'il y a de faire des previsions. On montre que des dispersions existent et sont fonction: - du point de mesure (niveau d'injection) - de la polarisation sous flux - de la dose instantanee - du fabricant pour un meme type de composant - de la geometrie utilisee Le probleme est ensuite traite au sens de la fiabilite et on donne des methodes permettant de garantir aux circuits une probabilite de bon fonctionnement pour une dose donnee. - methode du 'cas pire' - methode des moments - methode de Monte Carlo. (auteur)}
place = {France}
year = {1967}
month = {May}
}