You need JavaScript to view this

Study of recombination processes for 'electron-hole' pairs in germanium irradiated by {gamma} rays from {sup 60}Co using the photovoltaic effect in P-N junctions; Etude du processus de recombinaison des paires ''electron-trou'' dans le germanium irradie par les rayons {gamma} du cobalt 60 a l'aide de l'effet photovoltaique dans les jonctions P-N

Abstract

Using the photo-voltaic effect in p-n junctions, we have studied, during bombardment, the mechanism of the recombination of 'electron-hole' pairs in the presence of structure defects produced in germanium of the N and P types by {gamma} rays from a Co{sup 60} source. At 310 K the level of the recombination centres is situated 0.25 eV above the conduction band and the capture cross-sections of the holes and of the electrons have the respective values of: {sigma}{sub p} = 4 X 10{sup -15} cm{sup 2} and {sigma}{sub n} = 3 X 10{sup -15} cm{sup 2}. The value of {sigma}{sub n} appears to be under-estimated because the number of defects in P-type samples appears to be lower than that in N-type samples. These results lead to the conclusion that the interstitials are responsible for the recombination. At 80 K it has been found that in N-type samples, a shallow level exists at O.05 eV below the conduction band with a capture cross-section for the holes of {sigma}{sub p} {>=} 10{sup -14} cm{sup 2}. We believe that in this case the recombination of charge carriers is controlled by the neighbouring 'defect-interstitial' pairs. In P-type samples at low temperature, the life-time is practically  More>>
Authors:
Zahedi-Mochadam, A A [1] 
  1. Commissariat a l'Energie Atomique, Saclay (France). Centre d'Etudes Nucleaires
Publication Date:
Oct 01, 1964
Product Type:
Thesis/Dissertation
Report Number:
CEA-R-2723
Resource Relation:
Other Information: TH: These sciences; 29 refs
Subject:
36 MATERIALS SCIENCE; ELECTRON-HOLE COUPLING; GAMMA RADIATION; GERMANIUM; P-N JUNCTIONS; PHYSICAL RADIATION EFFECTS; RECOMBINATION
OSTI ID:
20680223
Research Organizations:
CEA Saclay, 91 - Gif-sur-Yvette (France); Faculte des Sciences de l'Universite de Paris, 75 (France)
Country of Origin:
France
Language:
French
Other Identifying Numbers:
TRN: FR05R2723115113
Availability:
Available from INIS in electronic form
Submitting Site:
FRN
Size:
77 pages
Announcement Date:
Jan 07, 2006

Citation Formats

Zahedi-Mochadam, A A. Study of recombination processes for 'electron-hole' pairs in germanium irradiated by {gamma} rays from {sup 60}Co using the photovoltaic effect in P-N junctions; Etude du processus de recombinaison des paires ''electron-trou'' dans le germanium irradie par les rayons {gamma} du cobalt 60 a l'aide de l'effet photovoltaique dans les jonctions P-N. France: N. p., 1964. Web.
Zahedi-Mochadam, A A. Study of recombination processes for 'electron-hole' pairs in germanium irradiated by {gamma} rays from {sup 60}Co using the photovoltaic effect in P-N junctions; Etude du processus de recombinaison des paires ''electron-trou'' dans le germanium irradie par les rayons {gamma} du cobalt 60 a l'aide de l'effet photovoltaique dans les jonctions P-N. France.
Zahedi-Mochadam, A A. 1964. "Study of recombination processes for 'electron-hole' pairs in germanium irradiated by {gamma} rays from {sup 60}Co using the photovoltaic effect in P-N junctions; Etude du processus de recombinaison des paires ''electron-trou'' dans le germanium irradie par les rayons {gamma} du cobalt 60 a l'aide de l'effet photovoltaique dans les jonctions P-N." France.
@misc{etde_20680223,
title = {Study of recombination processes for 'electron-hole' pairs in germanium irradiated by {gamma} rays from {sup 60}Co using the photovoltaic effect in P-N junctions; Etude du processus de recombinaison des paires ''electron-trou'' dans le germanium irradie par les rayons {gamma} du cobalt 60 a l'aide de l'effet photovoltaique dans les jonctions P-N}
author = {Zahedi-Mochadam, A A}
abstractNote = {Using the photo-voltaic effect in p-n junctions, we have studied, during bombardment, the mechanism of the recombination of 'electron-hole' pairs in the presence of structure defects produced in germanium of the N and P types by {gamma} rays from a Co{sup 60} source. At 310 K the level of the recombination centres is situated 0.25 eV above the conduction band and the capture cross-sections of the holes and of the electrons have the respective values of: {sigma}{sub p} = 4 X 10{sup -15} cm{sup 2} and {sigma}{sub n} = 3 X 10{sup -15} cm{sup 2}. The value of {sigma}{sub n} appears to be under-estimated because the number of defects in P-type samples appears to be lower than that in N-type samples. These results lead to the conclusion that the interstitials are responsible for the recombination. At 80 K it has been found that in N-type samples, a shallow level exists at O.05 eV below the conduction band with a capture cross-section for the holes of {sigma}{sub p} {>=} 10{sup -14} cm{sup 2}. We believe that in this case the recombination of charge carriers is controlled by the neighbouring 'defect-interstitial' pairs. In P-type samples at low temperature, the life-time is practically constant during irradiation. This fact is attributed to a spontaneous annealing of defects ol purely electrical origin. In the last part of the work the study of the photo-voltaic effect applied to the problem of gamma radiation dosimetry is considered. It is shown that such dosimeters, based on this principle, make it possible to measure the intensity of gamma rays over a very wide range. (author) [French] En utilisant l'effet photovoltaique dans les jonctions p-n, nous avons etudie au cours du bombardement le mecanisme de recombinaison des paires 'electron-trou' en presence des defauts de structure introduits dans le germanium de type N et de type P par les rayons gamma d'une source de Co{sup 60}. A 310 K, le niveau des centres de recombinaison se trouve a 0,25 eV au-dessous de la bande de conduction et les sections efficaces de capture des trous et des electrons ont respectivement pour valeurs: {sigma}{sub p} = 4 x 10{sup -15} cm{sup 2} et {sigma}{sub n} = 3 x 10{sup -15} cm{sup 2}. La valeur de {sigma}{sub n} semble sous-estimee, du fait que le nombre des defauts dans les echantillons de type P parait plus faible que dans ceux de type N. Ces resultats laissent a penser que les interstitiels sont responsables de la recombinaison. A 80 K, nous avons trouve dans les echantillons de type N, un niveau peu profond situe a 0,05 eV au-dessous de la bande de conduction avec la section de capture des trous {sigma}{sub p} {>=} 10{sup -14} cm{sup 2}. Nous pensons que dans ce cas, la recombinaison des porteurs de charge est controlee par des paires 'lacune-instertitiels' proches. Dans les echantillons de type P a basse temperature, la duree de vie reste pratiquement constante au cours de l'irradiation. Ce fait est attribue a une guerison spontanee des defauts d'origine purement electrique. Dans la derniere partie du travail, l'etude de l'effet photovoltaique applique au probleme de la dosimetrie des rayons gamma est consideree. On montre que de tels dosimetres bases sur ce principe permettent de mesurer l'intensite des rayons gamma dans une gamme tres etendue.}
place = {France}
year = {1964}
month = {Oct}
}