Abstract
A study is made here, from the point of view of the realization and the performance, of thick nuclear-compensated silicon detectors. After recalling the need for compensation and reviewing the existing methods, the author describes in detail the controlled realization of thick detectors by nuclear compensation from the theoretical and experimental points of view. The practical precautions which should be observed are given: control of the homogeneity of the starting material, control of the evolution of the compensation, elimination of parasitic processes. The performances of the detectors obtained are then studied: electrical characteristics (current, life-time) on the one hand, detection and spectrometry of penetrating radiations on the other hand. The results show, that the compensated diodes having an effective thickness of two millimeters operate satisfactorily as detectors for applied voltages of about 500 volts. The resolutions observed are then about 2 per cent for mono-energetic electrons and about 4 per cent for the gamma; they can be improved by the use of a pre-amplifier of very low background noise. (author) [French] Les detecteurs epais au silicium compense nucleairement sont etudies ici du double point de vue realisation et performances. Apres un rappel sur la necessite de la compensation et les
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Le Coroller, Y
[1]
- Commissariat a l'Energie Atomique, Saclay (France). Centre d'Etudes Nucleaires
Citation Formats
Le Coroller, Y.
Study of thick, nuclear-compensated silicon detectors; Etude des detecteurs epais au silicium compense nucleairement.
France: N. p.,
1964.
Web.
Le Coroller, Y.
Study of thick, nuclear-compensated silicon detectors; Etude des detecteurs epais au silicium compense nucleairement.
France.
Le Coroller, Y.
1964.
"Study of thick, nuclear-compensated silicon detectors; Etude des detecteurs epais au silicium compense nucleairement."
France.
@misc{etde_20680222,
title = {Study of thick, nuclear-compensated silicon detectors; Etude des detecteurs epais au silicium compense nucleairement}
author = {Le Coroller, Y}
abstractNote = {A study is made here, from the point of view of the realization and the performance, of thick nuclear-compensated silicon detectors. After recalling the need for compensation and reviewing the existing methods, the author describes in detail the controlled realization of thick detectors by nuclear compensation from the theoretical and experimental points of view. The practical precautions which should be observed are given: control of the homogeneity of the starting material, control of the evolution of the compensation, elimination of parasitic processes. The performances of the detectors obtained are then studied: electrical characteristics (current, life-time) on the one hand, detection and spectrometry of penetrating radiations on the other hand. The results show, that the compensated diodes having an effective thickness of two millimeters operate satisfactorily as detectors for applied voltages of about 500 volts. The resolutions observed are then about 2 per cent for mono-energetic electrons and about 4 per cent for the gamma; they can be improved by the use of a pre-amplifier of very low background noise. (author) [French] Les detecteurs epais au silicium compense nucleairement sont etudies ici du double point de vue realisation et performances. Apres un rappel sur la necessite de la compensation et les procedes existants, la realisation controlee des detecteurs epais par compensation nucleaire est decrite en detail sous l'aspect theorique et l'aspect experimental. On met en evidence les precautions a prendre dans la pratique: controle de l'homogeneite du materiau de base, controle de l'evolution de la compensation, elimination des processus parasites. On etudie ensuite les performances de detecteurs obtenus : caracteristiques electriques (courant, duree de vie) d'une part, d'autre part detection et spectrometrie des rayonnements penetrants. Les resultats montrent que les diodes compensees ayant une epaisseur utile de deux millimetres fonctionnent correctement en detecteurs pour des tensions appliquees d'environ 500 volts. Les resolutions observees sont alors de l'ordre de 2 pour centpour les electrons monocinetiques et de 4 pour cent pour les gamma; elles peuvent etre ameliorees par l'emploi d'un preamplificateur a tres faible bruit.}
place = {France}
year = {1964}
month = {Sep}
}
title = {Study of thick, nuclear-compensated silicon detectors; Etude des detecteurs epais au silicium compense nucleairement}
author = {Le Coroller, Y}
abstractNote = {A study is made here, from the point of view of the realization and the performance, of thick nuclear-compensated silicon detectors. After recalling the need for compensation and reviewing the existing methods, the author describes in detail the controlled realization of thick detectors by nuclear compensation from the theoretical and experimental points of view. The practical precautions which should be observed are given: control of the homogeneity of the starting material, control of the evolution of the compensation, elimination of parasitic processes. The performances of the detectors obtained are then studied: electrical characteristics (current, life-time) on the one hand, detection and spectrometry of penetrating radiations on the other hand. The results show, that the compensated diodes having an effective thickness of two millimeters operate satisfactorily as detectors for applied voltages of about 500 volts. The resolutions observed are then about 2 per cent for mono-energetic electrons and about 4 per cent for the gamma; they can be improved by the use of a pre-amplifier of very low background noise. (author) [French] Les detecteurs epais au silicium compense nucleairement sont etudies ici du double point de vue realisation et performances. Apres un rappel sur la necessite de la compensation et les procedes existants, la realisation controlee des detecteurs epais par compensation nucleaire est decrite en detail sous l'aspect theorique et l'aspect experimental. On met en evidence les precautions a prendre dans la pratique: controle de l'homogeneite du materiau de base, controle de l'evolution de la compensation, elimination des processus parasites. On etudie ensuite les performances de detecteurs obtenus : caracteristiques electriques (courant, duree de vie) d'une part, d'autre part detection et spectrometrie des rayonnements penetrants. Les resultats montrent que les diodes compensees ayant une epaisseur utile de deux millimetres fonctionnent correctement en detecteurs pour des tensions appliquees d'environ 500 volts. Les resolutions observees sont alors de l'ordre de 2 pour centpour les electrons monocinetiques et de 4 pour cent pour les gamma; elles peuvent etre ameliorees par l'emploi d'un preamplificateur a tres faible bruit.}
place = {France}
year = {1964}
month = {Sep}
}