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Silicon P.I.N. Junctions used for studies of radiation damage; Etude de l'irradiation aux neutrons rapides du silicium au moyen de jonctions P.I.N

Abstract

Irradiation of silicon P.I.N. junction has been studied primarily for the purpose of developing a radiation damage dosimeter, but also for the purpose of investigating silicon itself. It is known that the rate of recombination of electrons and holes is a linear function of defects introduced by neutron irradiation. Two methods have been used to measure that rate of recombination: forward characteristic measurements, recovery time measurements. In order to explain how these two parameters depend on recombination rate we have given a theory of the P.I.N. junction. We have also given an idea of the carrier lifetime dependence versus temperature. Annealing effects in the range of 70 to 700 K have also been studied, we found five annealing stages with corresponding activation energies. As an application for these studies, we developed a radiation damage dosimeter with which we made several experiments in facilities such as Naiade or Marias. (author) [French] L'irradiation de structures P.I.N. etait faite dans le but d'etudier principalement la mise au point d'un dosimetre a ''radiation damage'' et aussi pour etudier plus profondement le silicium lui-meme. On sait que le taux de recombinaison electrons-trous est une fonction lineaire du taux de defauts introduits par irradiation aux neutrons.  More>>
Authors:
Lanore, J [1] 
  1. Commissariat a l'Energie Atomique, Fontenay-aux-Roses (France). Centre d'Etudes Nucleaires
Publication Date:
Jun 01, 1964
Product Type:
Thesis/Dissertation
Report Number:
CEA-R-3061
Resource Relation:
Other Information: TH: These sciences; 77 refs; PBD: Jun 1964
Subject:
36 MATERIALS SCIENCE; ANNEALING; CARRIER LIFETIME; CRYSTAL DEFECTS; PHYSICAL RADIATION EFFECTS; SEMICONDUCTOR JUNCTIONS; SILICON; TEMPERATURE DEPENDENCE; WIGNER EFFECT
OSTI ID:
20621989
Research Organizations:
CEA Fontenay-aux-Roses, 92 (France); Faculte des Sciences de l'Universite de Paris, 75 (France)
Country of Origin:
France
Language:
French
Other Identifying Numbers:
TRN: FR05R3061065640
Availability:
Available from INIS in electronic form
Submitting Site:
FRN
Size:
[107] pages
Announcement Date:

Citation Formats

Lanore, J. Silicon P.I.N. Junctions used for studies of radiation damage; Etude de l'irradiation aux neutrons rapides du silicium au moyen de jonctions P.I.N. France: N. p., 1964. Web.
Lanore, J. Silicon P.I.N. Junctions used for studies of radiation damage; Etude de l'irradiation aux neutrons rapides du silicium au moyen de jonctions P.I.N. France.
Lanore, J. 1964. "Silicon P.I.N. Junctions used for studies of radiation damage; Etude de l'irradiation aux neutrons rapides du silicium au moyen de jonctions P.I.N." France.
@misc{etde_20621989,
title = {Silicon P.I.N. Junctions used for studies of radiation damage; Etude de l'irradiation aux neutrons rapides du silicium au moyen de jonctions P.I.N}
author = {Lanore, J}
abstractNote = {Irradiation of silicon P.I.N. junction has been studied primarily for the purpose of developing a radiation damage dosimeter, but also for the purpose of investigating silicon itself. It is known that the rate of recombination of electrons and holes is a linear function of defects introduced by neutron irradiation. Two methods have been used to measure that rate of recombination: forward characteristic measurements, recovery time measurements. In order to explain how these two parameters depend on recombination rate we have given a theory of the P.I.N. junction. We have also given an idea of the carrier lifetime dependence versus temperature. Annealing effects in the range of 70 to 700 K have also been studied, we found five annealing stages with corresponding activation energies. As an application for these studies, we developed a radiation damage dosimeter with which we made several experiments in facilities such as Naiade or Marias. (author) [French] L'irradiation de structures P.I.N. etait faite dans le but d'etudier principalement la mise au point d'un dosimetre a ''radiation damage'' et aussi pour etudier plus profondement le silicium lui-meme. On sait que le taux de recombinaison electrons-trous est une fonction lineaire du taux de defauts introduits par irradiation aux neutrons. Deux methodes ont ete utilisees pour atteindre ce taux de recombinaison: mesures de la caracteristique directe, mesures du temps de retournement. Pour expliquer de quelle facon ces parametres dependent du taux de recombinaison. Nous avons donne une theorie de la jonction P.I.N. Nous avons aussi donne l'allure des variations du temps de vie des porteurs en fonction de la temperature. Nous avons d'autre part effectue des recuits entre 70 et 700 K, domaine dans lequel nous avons trouve cinq etapes de ''guerison'' avec les energies d'activation correspondantes. En application de ces etudes nous avons mis ou point un dosimetre a ''radiation damage'' avec lequel nous avons effectue des mesures dans les protections de plusieurs dispositifs tels que Naiade et Morius. (auteur)}
place = {France}
year = {1964}
month = {Jun}
}