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Peripheral dose measurement with a MOSFET detector

Abstract

The accuracy of a MOSFET dosimetry system with respect to peripheral therapeutic doses from high-energy X-rays has been evaluated . The results have been compared with ionisation chamber measurements in the same peripheral regions of the beam. For 6 MV and 18 MV X-ray beams, the MOSFET system in the high-sensitivity mode produces reproducibility of dose measurement with relative standard deviations within 1% of the maximal dose in the beam{sub ,} if the measurement is made upto 15 cm away from the beam edge. The results have shown that the MOSFET device can adequately measure peripheral doses, which would be beneficial for in vivo dose assessments in radiotherapy.
Authors:
Butson, Martin J; [1]  Cheung, Tsang; [2]  Yu, Peter K.N. [2] 
  1. Department of Physics and Materials Science, City University of Hong Kong, Kowloon Tong, Hong Kong (China) and Department of Medical Physics, Illawarra Cancer Care Centre, Crown St., Wollongong, NSW 2500 (Australia)
  2. Department of Physics and Materials Science, City University of Hong Kong, Kowloon Tong, Hong Kong (China)
Publication Date:
Apr 01, 2005
Product Type:
Journal Article
Resource Relation:
Journal Name: Applied Radiation and Isotopes; Journal Volume: 62; Journal Issue: 4; Other Information: DOI: 10.1016/j.apradiso.2004.09.001; PII: S0969-8043(04)00499-3; Copyright (c) 2004 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved; Country of input: International Atomic Energy Agency (IAEA); PBD: Apr 2005
Subject:
61 RADIATION PROTECTION AND DOSIMETRY; BEAMS; DOSIMETRY; IN VIVO; IONIZATION CHAMBERS; MOSFET; RADIATION DOSES; RADIOTHERAPY; SENSITIVITY; X RADIATION
OSTI ID:
20620219
Country of Origin:
United Kingdom
Language:
English
Other Identifying Numbers:
Journal ID: ISSN 0969-8043; ARISEF; TRN: GB05R1407063869
Submitting Site:
GBN
Size:
page(s) 631-634
Announcement Date:
Aug 28, 2005

Citation Formats

Butson, Martin J, Cheung, Tsang, and Yu, Peter K.N. Peripheral dose measurement with a MOSFET detector. United Kingdom: N. p., 2005. Web. doi:10.1016/j.apradiso.2004.09.001.
Butson, Martin J, Cheung, Tsang, & Yu, Peter K.N. Peripheral dose measurement with a MOSFET detector. United Kingdom. https://doi.org/10.1016/j.apradiso.2004.09.001
Butson, Martin J, Cheung, Tsang, and Yu, Peter K.N. 2005. "Peripheral dose measurement with a MOSFET detector." United Kingdom. https://doi.org/10.1016/j.apradiso.2004.09.001.
@misc{etde_20620219,
title = {Peripheral dose measurement with a MOSFET detector}
author = {Butson, Martin J, Cheung, Tsang, and Yu, Peter K.N.}
abstractNote = {The accuracy of a MOSFET dosimetry system with respect to peripheral therapeutic doses from high-energy X-rays has been evaluated . The results have been compared with ionisation chamber measurements in the same peripheral regions of the beam. For 6 MV and 18 MV X-ray beams, the MOSFET system in the high-sensitivity mode produces reproducibility of dose measurement with relative standard deviations within 1% of the maximal dose in the beam{sub ,} if the measurement is made upto 15 cm away from the beam edge. The results have shown that the MOSFET device can adequately measure peripheral doses, which would be beneficial for in vivo dose assessments in radiotherapy.}
doi = {10.1016/j.apradiso.2004.09.001}
journal = []
issue = {4}
volume = {62}
journal type = {AC}
place = {United Kingdom}
year = {2005}
month = {Apr}
}