Abstract
Full text: The Kane solid-state quantum computer employs as qubits an array of {sup 31}P atoms embedded with nanoscale precision in a silicon matrix. One proposal for the fabrication of such an array is by phosphorous-ion implantation. We present an overview of a program of research aiming to develop advanced imaging techniques to address key issues relating to the fabrication of the Kane device by ion implantation, focusing particularly on the development of surface-resist technology to allow the registration of single implanted ions and an examination of the extent of damage imposed on the silicon matrix. Our surface resists take the form of a polymethylmethacrylate (PMMA) thin-films, which have been exposed both to MeV and keV ions. Registration of ion implantation is based on the development of localised chemical modification arising from latent damage caused within the PMMA layer by the passage of an implanted ion. On development of the resist, atomic force microscopy imaging demonstrates the formation of clearly defined etched holes, of typical diameter 30 nm, which are ascribed to single-ion impacts. The use of novel scanning probes, such as carbon nanotubes, for imaging complex PMMA resist structures will be illustrated. Potential applications to the fabrication of self-aligned
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Pakes, C;
Millar, V;
Peng, J;
Cimmino, A;
Prawer, S;
Jamieson, D;
Yang, C;
[1]
McKinnon, R;
Stanley, F;
Clark, R;
[2]
Dzurak, A
[3]
- University of Melbourne, VIC (Australia). School of Physics, Centre for Quantum Computer Technology
- Centre for Quantum Computer Technology, (Australia)
- University of New South Wales, Sydney, NSW (Australia). School of Electrical Engineering and Telecommunications
Citation Formats
Pakes, C, Millar, V, Peng, J, Cimmino, A, Prawer, S, Jamieson, D, Yang, C, McKinnon, R, Stanley, F, Clark, R, and Dzurak, A.
Examination of the ion-implantation route to fabrication of the Kane quantum computer using advanced imaging techniques.
Australia: N. p.,
2002.
Web.
Pakes, C, Millar, V, Peng, J, Cimmino, A, Prawer, S, Jamieson, D, Yang, C, McKinnon, R, Stanley, F, Clark, R, & Dzurak, A.
Examination of the ion-implantation route to fabrication of the Kane quantum computer using advanced imaging techniques.
Australia.
Pakes, C, Millar, V, Peng, J, Cimmino, A, Prawer, S, Jamieson, D, Yang, C, McKinnon, R, Stanley, F, Clark, R, and Dzurak, A.
2002.
"Examination of the ion-implantation route to fabrication of the Kane quantum computer using advanced imaging techniques."
Australia.
@misc{etde_20619949,
title = {Examination of the ion-implantation route to fabrication of the Kane quantum computer using advanced imaging techniques}
author = {Pakes, C, Millar, V, Peng, J, Cimmino, A, Prawer, S, Jamieson, D, Yang, C, McKinnon, R, Stanley, F, Clark, R, and Dzurak, A}
abstractNote = {Full text: The Kane solid-state quantum computer employs as qubits an array of {sup 31}P atoms embedded with nanoscale precision in a silicon matrix. One proposal for the fabrication of such an array is by phosphorous-ion implantation. We present an overview of a program of research aiming to develop advanced imaging techniques to address key issues relating to the fabrication of the Kane device by ion implantation, focusing particularly on the development of surface-resist technology to allow the registration of single implanted ions and an examination of the extent of damage imposed on the silicon matrix. Our surface resists take the form of a polymethylmethacrylate (PMMA) thin-films, which have been exposed both to MeV and keV ions. Registration of ion implantation is based on the development of localised chemical modification arising from latent damage caused within the PMMA layer by the passage of an implanted ion. On development of the resist, atomic force microscopy imaging demonstrates the formation of clearly defined etched holes, of typical diameter 30 nm, which are ascribed to single-ion impacts. The use of novel scanning probes, such as carbon nanotubes, for imaging complex PMMA resist structures will be illustrated. Potential applications to the fabrication of self-aligned gate structures will be discussed.}
place = {Australia}
year = {2002}
month = {Jul}
}
title = {Examination of the ion-implantation route to fabrication of the Kane quantum computer using advanced imaging techniques}
author = {Pakes, C, Millar, V, Peng, J, Cimmino, A, Prawer, S, Jamieson, D, Yang, C, McKinnon, R, Stanley, F, Clark, R, and Dzurak, A}
abstractNote = {Full text: The Kane solid-state quantum computer employs as qubits an array of {sup 31}P atoms embedded with nanoscale precision in a silicon matrix. One proposal for the fabrication of such an array is by phosphorous-ion implantation. We present an overview of a program of research aiming to develop advanced imaging techniques to address key issues relating to the fabrication of the Kane device by ion implantation, focusing particularly on the development of surface-resist technology to allow the registration of single implanted ions and an examination of the extent of damage imposed on the silicon matrix. Our surface resists take the form of a polymethylmethacrylate (PMMA) thin-films, which have been exposed both to MeV and keV ions. Registration of ion implantation is based on the development of localised chemical modification arising from latent damage caused within the PMMA layer by the passage of an implanted ion. On development of the resist, atomic force microscopy imaging demonstrates the formation of clearly defined etched holes, of typical diameter 30 nm, which are ascribed to single-ion impacts. The use of novel scanning probes, such as carbon nanotubes, for imaging complex PMMA resist structures will be illustrated. Potential applications to the fabrication of self-aligned gate structures will be discussed.}
place = {Australia}
year = {2002}
month = {Jul}
}