Abstract
Full text: Transport properties of extremely high purity 2D electron systems at low temperatures are still not well understood either experimentally or theoretically, even though these systems are fast becoming a mainstream basis of computing devices. Evidence has accumulated suggesting with very low levels of impurities that a transition can be induced from an insulating to metallic state by increasing the electron density. The total number of impurities is so low that the interactions between the electrons dominate the nature of the electron state. We propose a semiempirical one parameter scaling equation for the temperature dependent resistivity at low but finite temperatures T{approx}1 K. The equation has a physically meaningful insulating limit and predicts a metallic ground state at higher electron densities. The temperature dependence of the resistivity we obtain from this renormalization group equation gives good fits to experimental data near the separatrix.
Neilson, D;
[1]
Geldart, D J.W.
[2]
- University of New South Wales, Sydney, NSW (Australia). School of Physics
- Dalhousie University, NS (Canada). Physics Department
Citation Formats
Neilson, D, and Geldart, D J.W.
Low temperature properties of 2D electrons in weakly disordered materials.
Australia: N. p.,
2002.
Web.
Neilson, D, & Geldart, D J.W.
Low temperature properties of 2D electrons in weakly disordered materials.
Australia.
Neilson, D, and Geldart, D J.W.
2002.
"Low temperature properties of 2D electrons in weakly disordered materials."
Australia.
@misc{etde_20619930,
title = {Low temperature properties of 2D electrons in weakly disordered materials}
author = {Neilson, D, and Geldart, D J.W.}
abstractNote = {Full text: Transport properties of extremely high purity 2D electron systems at low temperatures are still not well understood either experimentally or theoretically, even though these systems are fast becoming a mainstream basis of computing devices. Evidence has accumulated suggesting with very low levels of impurities that a transition can be induced from an insulating to metallic state by increasing the electron density. The total number of impurities is so low that the interactions between the electrons dominate the nature of the electron state. We propose a semiempirical one parameter scaling equation for the temperature dependent resistivity at low but finite temperatures T{approx}1 K. The equation has a physically meaningful insulating limit and predicts a metallic ground state at higher electron densities. The temperature dependence of the resistivity we obtain from this renormalization group equation gives good fits to experimental data near the separatrix.}
place = {Australia}
year = {2002}
month = {Jul}
}
title = {Low temperature properties of 2D electrons in weakly disordered materials}
author = {Neilson, D, and Geldart, D J.W.}
abstractNote = {Full text: Transport properties of extremely high purity 2D electron systems at low temperatures are still not well understood either experimentally or theoretically, even though these systems are fast becoming a mainstream basis of computing devices. Evidence has accumulated suggesting with very low levels of impurities that a transition can be induced from an insulating to metallic state by increasing the electron density. The total number of impurities is so low that the interactions between the electrons dominate the nature of the electron state. We propose a semiempirical one parameter scaling equation for the temperature dependent resistivity at low but finite temperatures T{approx}1 K. The equation has a physically meaningful insulating limit and predicts a metallic ground state at higher electron densities. The temperature dependence of the resistivity we obtain from this renormalization group equation gives good fits to experimental data near the separatrix.}
place = {Australia}
year = {2002}
month = {Jul}
}