Abstract
Full text: Practical and simple measurements of Non Ionising Energy Losses (NIEL) and Ionising Energy Losses (IEL) in neutron and proton fields are an important issue for quality assurance in a radiation environment at different radiation facilities. Such sensors are important for radiation damage monitoring of silicon detector and readout electronics in high energy physics. In this work the theoretical consideration of charge carrier concentration in high resistivity silicon under fast neutron irradiation has been studied. Theoretical analysis was applied to improve the response of forward biased dosimetric p-i-n diodes when studying non ionising energy losses in neutron and proton fields. The dosimetric characteristics of the new diodes have been studied in pulsed reactor, high energy neutron (50 MeV) and proton (250 MeV) fields. On the basis of this work the Centre for Medical Radiation Physics at the University of Wollongong has successfully designed, developed and tested a single sensor system for the measurement of NIEL and IEL in silicon. This sensor has been manufactured using high purity, n-type silicon utilising simple microelectronic technology. It is a fully depleted silicon planar detector with one n+ implanted ohmic contact and several p+ ion implanted strips. We have also investigated an annular
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Rozenfeld, A;
Lerch, A;
[1]
Reinhard, M;
[1]
Alexiev, M;
[2]
Taylor, D;
[3]
Peak, L
[4]
- University of Wollongong, NSW (Australia). Centre for Medical Radiation Physics
- Australian Nuclear Science and Technology Organisation, Menai, NSW (Australia). Radiation Standards Laboratory
- University of Melbourne, VIC (Australia). High Energy Physics Department
- University of Sydney, Sydney, NSW (Australia). High Energy Physics Department
Citation Formats
Rozenfeld, A, Lerch, A, Reinhard, M, Alexiev, M, Taylor, D, and Peak, L.
A new silicon sensor for use in radiation damage monitoring systems.
Australia: N. p.,
2002.
Web.
Rozenfeld, A, Lerch, A, Reinhard, M, Alexiev, M, Taylor, D, & Peak, L.
A new silicon sensor for use in radiation damage monitoring systems.
Australia.
Rozenfeld, A, Lerch, A, Reinhard, M, Alexiev, M, Taylor, D, and Peak, L.
2002.
"A new silicon sensor for use in radiation damage monitoring systems."
Australia.
@misc{etde_20619905,
title = {A new silicon sensor for use in radiation damage monitoring systems}
author = {Rozenfeld, A, Lerch, A, Reinhard, M, Alexiev, M, Taylor, D, and Peak, L}
abstractNote = {Full text: Practical and simple measurements of Non Ionising Energy Losses (NIEL) and Ionising Energy Losses (IEL) in neutron and proton fields are an important issue for quality assurance in a radiation environment at different radiation facilities. Such sensors are important for radiation damage monitoring of silicon detector and readout electronics in high energy physics. In this work the theoretical consideration of charge carrier concentration in high resistivity silicon under fast neutron irradiation has been studied. Theoretical analysis was applied to improve the response of forward biased dosimetric p-i-n diodes when studying non ionising energy losses in neutron and proton fields. The dosimetric characteristics of the new diodes have been studied in pulsed reactor, high energy neutron (50 MeV) and proton (250 MeV) fields. On the basis of this work the Centre for Medical Radiation Physics at the University of Wollongong has successfully designed, developed and tested a single sensor system for the measurement of NIEL and IEL in silicon. This sensor has been manufactured using high purity, n-type silicon utilising simple microelectronic technology. It is a fully depleted silicon planar detector with one n+ implanted ohmic contact and several p+ ion implanted strips. We have also investigated an annular version of this structure. In this case the n+ contact is located in the centre with one or more p+ strips surrounding the n+ contact. These structures in a fully depleted mode act as IEL monitors when operated in current or spectroscopy mode and as NIEL (Si) monitors when operated in a forward bias voltage mode readout. Using different p+ strips, ie. different base lengths it is possible to adjust the sensitivity of the NIEL sensor. Even a neutron/proton fluence of {approx}10{sup 14} will not cause the new diode to lose its capability of accurate IEL monitoring due to the fact that the deficit in charge collection is only {approx}5%.}
place = {Australia}
year = {2002}
month = {Jul}
}
title = {A new silicon sensor for use in radiation damage monitoring systems}
author = {Rozenfeld, A, Lerch, A, Reinhard, M, Alexiev, M, Taylor, D, and Peak, L}
abstractNote = {Full text: Practical and simple measurements of Non Ionising Energy Losses (NIEL) and Ionising Energy Losses (IEL) in neutron and proton fields are an important issue for quality assurance in a radiation environment at different radiation facilities. Such sensors are important for radiation damage monitoring of silicon detector and readout electronics in high energy physics. In this work the theoretical consideration of charge carrier concentration in high resistivity silicon under fast neutron irradiation has been studied. Theoretical analysis was applied to improve the response of forward biased dosimetric p-i-n diodes when studying non ionising energy losses in neutron and proton fields. The dosimetric characteristics of the new diodes have been studied in pulsed reactor, high energy neutron (50 MeV) and proton (250 MeV) fields. On the basis of this work the Centre for Medical Radiation Physics at the University of Wollongong has successfully designed, developed and tested a single sensor system for the measurement of NIEL and IEL in silicon. This sensor has been manufactured using high purity, n-type silicon utilising simple microelectronic technology. It is a fully depleted silicon planar detector with one n+ implanted ohmic contact and several p+ ion implanted strips. We have also investigated an annular version of this structure. In this case the n+ contact is located in the centre with one or more p+ strips surrounding the n+ contact. These structures in a fully depleted mode act as IEL monitors when operated in current or spectroscopy mode and as NIEL (Si) monitors when operated in a forward bias voltage mode readout. Using different p+ strips, ie. different base lengths it is possible to adjust the sensitivity of the NIEL sensor. Even a neutron/proton fluence of {approx}10{sup 14} will not cause the new diode to lose its capability of accurate IEL monitoring due to the fact that the deficit in charge collection is only {approx}5%.}
place = {Australia}
year = {2002}
month = {Jul}
}