Abstract
Full text: A silicon based solid-state quantum computer is a very desirable goal. The proposal of Kane provides a starting point for the development of such a computer based on an array of single {sup 31}P atoms in a pure {sup 28}Si substrate. But numerous daunting technological challenges must be overcome in its construction and operation. The device is constructed from accurately positioned arrays of single atoms, forming qubits, registered to individual electrodes, or gates, that allow individual atoms to be addressed. Operation of the device requires control and readout of single nuclear and electron spins. The first part of this presentation reviews the theoretical models developed using Technology Computer Aided Design (TCAD) that simulate and refine many of the physical processes involved in operation of the Kane device. The second part of the presentation reviews the two strategies that have been developed to meet the challenge of construction of a working prototype. The first is the 'bottom-up strategy' that employs an AFM machined array of holes in a hydrogen resist that allows an array of {sup 31}P atoms derived from PH{sub 3} deposition to be fabricated on a {sup 28}Si substrate. Successful fabrication of {sup 31}P arrays by this
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Jamieson, D;
Pakes, C I;
Yang, C;
Donnelan, P G;
Coulthurst, A;
George, D P;
Spizzirri, P G;
McCallum, J C;
Lay, M;
Millar, V;
Wellard, C J;
Hollenberg, L C.L.;
Prawer, S;
[1]
Dzurak, A S;
Stanley, F E;
Gauja, E;
Peceros, K;
Macks, L D;
Szymanksa, J;
Buehler, T M;
McKinnon, R P;
Chan, V;
Mitic, M;
Reilly, D J;
Simmons, M Y;
Oberbeck, L;
Curson, N J;
Schofield, S R;
Hamilton, A R;
Clark, R G
[2]
- University of Melbourne, VIC (Australia). School of Physics, Centre for Quantum Computer Technology
- University of New South Wales, NSW (Australia). Centre for Quantum Computer Technology
Citation Formats
Jamieson, D, Pakes, C I, Yang, C, Donnelan, P G, Coulthurst, A, George, D P, Spizzirri, P G, McCallum, J C, Lay, M, Millar, V, Wellard, C J, Hollenberg, L C.L., Prawer, S, Dzurak, A S, Stanley, F E, Gauja, E, Peceros, K, Macks, L D, Szymanksa, J, Buehler, T M, McKinnon, R P, Chan, V, Mitic, M, Reilly, D J, Simmons, M Y, Oberbeck, L, Curson, N J, Schofield, S R, Hamilton, A R, and Clark, R G.
Progress towards a revolutionary quantum computer in silicon.
Australia: N. p.,
2002.
Web.
Jamieson, D, Pakes, C I, Yang, C, Donnelan, P G, Coulthurst, A, George, D P, Spizzirri, P G, McCallum, J C, Lay, M, Millar, V, Wellard, C J, Hollenberg, L C.L., Prawer, S, Dzurak, A S, Stanley, F E, Gauja, E, Peceros, K, Macks, L D, Szymanksa, J, Buehler, T M, McKinnon, R P, Chan, V, Mitic, M, Reilly, D J, Simmons, M Y, Oberbeck, L, Curson, N J, Schofield, S R, Hamilton, A R, & Clark, R G.
Progress towards a revolutionary quantum computer in silicon.
Australia.
Jamieson, D, Pakes, C I, Yang, C, Donnelan, P G, Coulthurst, A, George, D P, Spizzirri, P G, McCallum, J C, Lay, M, Millar, V, Wellard, C J, Hollenberg, L C.L., Prawer, S, Dzurak, A S, Stanley, F E, Gauja, E, Peceros, K, Macks, L D, Szymanksa, J, Buehler, T M, McKinnon, R P, Chan, V, Mitic, M, Reilly, D J, Simmons, M Y, Oberbeck, L, Curson, N J, Schofield, S R, Hamilton, A R, and Clark, R G.
2002.
"Progress towards a revolutionary quantum computer in silicon."
Australia.
@misc{etde_20619838,
title = {Progress towards a revolutionary quantum computer in silicon}
author = {Jamieson, D, Pakes, C I, Yang, C, Donnelan, P G, Coulthurst, A, George, D P, Spizzirri, P G, McCallum, J C, Lay, M, Millar, V, Wellard, C J, Hollenberg, L C.L., Prawer, S, Dzurak, A S, Stanley, F E, Gauja, E, Peceros, K, Macks, L D, Szymanksa, J, Buehler, T M, McKinnon, R P, Chan, V, Mitic, M, Reilly, D J, Simmons, M Y, Oberbeck, L, Curson, N J, Schofield, S R, Hamilton, A R, and Clark, R G}
abstractNote = {Full text: A silicon based solid-state quantum computer is a very desirable goal. The proposal of Kane provides a starting point for the development of such a computer based on an array of single {sup 31}P atoms in a pure {sup 28}Si substrate. But numerous daunting technological challenges must be overcome in its construction and operation. The device is constructed from accurately positioned arrays of single atoms, forming qubits, registered to individual electrodes, or gates, that allow individual atoms to be addressed. Operation of the device requires control and readout of single nuclear and electron spins. The first part of this presentation reviews the theoretical models developed using Technology Computer Aided Design (TCAD) that simulate and refine many of the physical processes involved in operation of the Kane device. The second part of the presentation reviews the two strategies that have been developed to meet the challenge of construction of a working prototype. The first is the 'bottom-up strategy' that employs an AFM machined array of holes in a hydrogen resist that allows an array of {sup 31}P atoms derived from PH{sub 3} deposition to be fabricated on a {sup 28}Si substrate. Successful fabrication of {sup 31}P arrays by this method has now been achieved. A second, parallel strategy, that offers a faster route to a few qubit devices is the 'top-down strategy'. In this case, a three dimensional structure is fabricated in a resist multilayer using electron beam lithography. The resist multilayer structure contains apertures into which single atoms can be implanted to form the qubits. An ion energy of less than 20 keV is necessary to ensure the ion range is at the required depth in the substrate which is of the order of 20 nm for the Kane proposal. To register the impact of the single atoms an unusual scheme has been devised. Two electrodes, deposited on the surface of the substrate, produce an electric field parallel with the surface. Ion impact produces a cloud of electron-hole pairs in the substrate, which are separated by the electric field leading to a current transient in an external circuit. This transient is the signal that a single ion has been implanted into the substrate and numerical simulations with the TCAD package have been used to optimise this process. Pilot experiments with EBL devices fabricated at UNSW have been implanted with 15 keV ions in Melbourne and the pulse height spectrum of single ion impacts has been successfully recorded. Discrimination on the pulse height allows rejection of ions that suffer unacceptable straggling. This opens the way to the rapid construction of a two qubit device in the first instance that will test many of the essential mechanisms of a revolutionary solid state quantum computer.}
place = {Australia}
year = {2002}
month = {Jul}
}
title = {Progress towards a revolutionary quantum computer in silicon}
author = {Jamieson, D, Pakes, C I, Yang, C, Donnelan, P G, Coulthurst, A, George, D P, Spizzirri, P G, McCallum, J C, Lay, M, Millar, V, Wellard, C J, Hollenberg, L C.L., Prawer, S, Dzurak, A S, Stanley, F E, Gauja, E, Peceros, K, Macks, L D, Szymanksa, J, Buehler, T M, McKinnon, R P, Chan, V, Mitic, M, Reilly, D J, Simmons, M Y, Oberbeck, L, Curson, N J, Schofield, S R, Hamilton, A R, and Clark, R G}
abstractNote = {Full text: A silicon based solid-state quantum computer is a very desirable goal. The proposal of Kane provides a starting point for the development of such a computer based on an array of single {sup 31}P atoms in a pure {sup 28}Si substrate. But numerous daunting technological challenges must be overcome in its construction and operation. The device is constructed from accurately positioned arrays of single atoms, forming qubits, registered to individual electrodes, or gates, that allow individual atoms to be addressed. Operation of the device requires control and readout of single nuclear and electron spins. The first part of this presentation reviews the theoretical models developed using Technology Computer Aided Design (TCAD) that simulate and refine many of the physical processes involved in operation of the Kane device. The second part of the presentation reviews the two strategies that have been developed to meet the challenge of construction of a working prototype. The first is the 'bottom-up strategy' that employs an AFM machined array of holes in a hydrogen resist that allows an array of {sup 31}P atoms derived from PH{sub 3} deposition to be fabricated on a {sup 28}Si substrate. Successful fabrication of {sup 31}P arrays by this method has now been achieved. A second, parallel strategy, that offers a faster route to a few qubit devices is the 'top-down strategy'. In this case, a three dimensional structure is fabricated in a resist multilayer using electron beam lithography. The resist multilayer structure contains apertures into which single atoms can be implanted to form the qubits. An ion energy of less than 20 keV is necessary to ensure the ion range is at the required depth in the substrate which is of the order of 20 nm for the Kane proposal. To register the impact of the single atoms an unusual scheme has been devised. Two electrodes, deposited on the surface of the substrate, produce an electric field parallel with the surface. Ion impact produces a cloud of electron-hole pairs in the substrate, which are separated by the electric field leading to a current transient in an external circuit. This transient is the signal that a single ion has been implanted into the substrate and numerical simulations with the TCAD package have been used to optimise this process. Pilot experiments with EBL devices fabricated at UNSW have been implanted with 15 keV ions in Melbourne and the pulse height spectrum of single ion impacts has been successfully recorded. Discrimination on the pulse height allows rejection of ions that suffer unacceptable straggling. This opens the way to the rapid construction of a two qubit device in the first instance that will test many of the essential mechanisms of a revolutionary solid state quantum computer.}
place = {Australia}
year = {2002}
month = {Jul}
}