Abstract
We report a quantum well intermixing technique based on Ar plasma induced damage on both GaAs- and InP-based materials with single-step multiple band gap creation across a substrate. A quantum well structure with multiplewidths serves as a sensitive tool to probe the damage created by Ar plasma. The analysis reveals that the surface defects were created up to a certain depth and propagated deeper into the material upon subsequent annealing. A simple and reliable way to obtain a controlled multiple band gap was achieved by using the spatial defect modulated intermixing. Eight band gap levels were realized across a single chip of quantum well laser structure with a linear relationship to the fraction of the open area under plasma exposure. This simple approach can be implemented at a postgrowth level to a wide range of material systems to achieve multiple band gaps, suitable for photonic integration.
Djie, H S;
Mei, T;
Arokiaraj, J;
Nie, D
[1]
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore)
Citation Formats
Djie, H S, Mei, T, Arokiaraj, J, and Nie, D.
Single step quantum well intermixing with multiple band gap control for III-V compound semiconductors.
United States: N. p.,
2004.
Web.
doi:10.1063/1.1780608.
Djie, H S, Mei, T, Arokiaraj, J, & Nie, D.
Single step quantum well intermixing with multiple band gap control for III-V compound semiconductors.
United States.
https://doi.org/10.1063/1.1780608
Djie, H S, Mei, T, Arokiaraj, J, and Nie, D.
2004.
"Single step quantum well intermixing with multiple band gap control for III-V compound semiconductors."
United States.
https://doi.org/10.1063/1.1780608.
@misc{etde_20619148,
title = {Single step quantum well intermixing with multiple band gap control for III-V compound semiconductors}
author = {Djie, H S, Mei, T, Arokiaraj, J, and Nie, D}
abstractNote = {We report a quantum well intermixing technique based on Ar plasma induced damage on both GaAs- and InP-based materials with single-step multiple band gap creation across a substrate. A quantum well structure with multiplewidths serves as a sensitive tool to probe the damage created by Ar plasma. The analysis reveals that the surface defects were created up to a certain depth and propagated deeper into the material upon subsequent annealing. A simple and reliable way to obtain a controlled multiple band gap was achieved by using the spatial defect modulated intermixing. Eight band gap levels were realized across a single chip of quantum well laser structure with a linear relationship to the fraction of the open area under plasma exposure. This simple approach can be implemented at a postgrowth level to a wide range of material systems to achieve multiple band gaps, suitable for photonic integration.}
doi = {10.1063/1.1780608}
journal = []
issue = {6}
volume = {96}
journal type = {AC}
place = {United States}
year = {2004}
month = {Sep}
}
title = {Single step quantum well intermixing with multiple band gap control for III-V compound semiconductors}
author = {Djie, H S, Mei, T, Arokiaraj, J, and Nie, D}
abstractNote = {We report a quantum well intermixing technique based on Ar plasma induced damage on both GaAs- and InP-based materials with single-step multiple band gap creation across a substrate. A quantum well structure with multiplewidths serves as a sensitive tool to probe the damage created by Ar plasma. The analysis reveals that the surface defects were created up to a certain depth and propagated deeper into the material upon subsequent annealing. A simple and reliable way to obtain a controlled multiple band gap was achieved by using the spatial defect modulated intermixing. Eight band gap levels were realized across a single chip of quantum well laser structure with a linear relationship to the fraction of the open area under plasma exposure. This simple approach can be implemented at a postgrowth level to a wide range of material systems to achieve multiple band gaps, suitable for photonic integration.}
doi = {10.1063/1.1780608}
journal = []
issue = {6}
volume = {96}
journal type = {AC}
place = {United States}
year = {2004}
month = {Sep}
}