Abstract
We have investigated the effect of radiation damage and impurity concentration on solid phase epitaxial growth of amorphous silicon carbide (SiC) as well as microstructures of recrystallized layer using transmission electron microscopy. Single crystals of 6H-SiC with (0001) orientation were irradiated with 150 keV Xe ions to fluences of 10{sup 15} and 10{sup 16}/cm{sup 2}, followed by annealing at 890 deg. C. Full epitaxial recrystallization took place in a specimen implanted with 10{sup 15} Xe ions, while retardation of recrystallization was observed in a specimen implanted with 10{sup 16}/cm{sup 2} Xe ions. Atomic pair-distribution function analyses and energy dispersive x-ray spectroscopy results suggested that the retardation of recrystallization of the 10{sup 16} Xe/cm{sup 2} implanted sample is attributed to the difference in amorphous structures between the 10{sup 15} and 10{sup 16} Xe/cm{sup 2} implanted samples, i.e., more chemically disordered atomistic structure and higher Xe impurity concentration in the 10{sup 16} Xe/cm{sup 2} implanted sample.
Bae, I -T;
Ishimaru, Manabu;
Hirotsu, Yoshihiko;
Sickafus, Kurt E;
[1]
Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)]
- The Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567-0047 (Japan)
Citation Formats
Bae, I -T, Ishimaru, Manabu, Hirotsu, Yoshihiko, Sickafus, Kurt E, and Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)].
Solid phase epitaxy of amorphous silicon carbide: Ion fluence dependence.
United States: N. p.,
2004.
Web.
doi:10.1063/1.1766093.
Bae, I -T, Ishimaru, Manabu, Hirotsu, Yoshihiko, Sickafus, Kurt E, & Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)].
Solid phase epitaxy of amorphous silicon carbide: Ion fluence dependence.
United States.
https://doi.org/10.1063/1.1766093
Bae, I -T, Ishimaru, Manabu, Hirotsu, Yoshihiko, Sickafus, Kurt E, and Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)].
2004.
"Solid phase epitaxy of amorphous silicon carbide: Ion fluence dependence."
United States.
https://doi.org/10.1063/1.1766093.
@misc{etde_20619071,
title = {Solid phase epitaxy of amorphous silicon carbide: Ion fluence dependence}
author = {Bae, I -T, Ishimaru, Manabu, Hirotsu, Yoshihiko, Sickafus, Kurt E, and Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)]}
abstractNote = {We have investigated the effect of radiation damage and impurity concentration on solid phase epitaxial growth of amorphous silicon carbide (SiC) as well as microstructures of recrystallized layer using transmission electron microscopy. Single crystals of 6H-SiC with (0001) orientation were irradiated with 150 keV Xe ions to fluences of 10{sup 15} and 10{sup 16}/cm{sup 2}, followed by annealing at 890 deg. C. Full epitaxial recrystallization took place in a specimen implanted with 10{sup 15} Xe ions, while retardation of recrystallization was observed in a specimen implanted with 10{sup 16}/cm{sup 2} Xe ions. Atomic pair-distribution function analyses and energy dispersive x-ray spectroscopy results suggested that the retardation of recrystallization of the 10{sup 16} Xe/cm{sup 2} implanted sample is attributed to the difference in amorphous structures between the 10{sup 15} and 10{sup 16} Xe/cm{sup 2} implanted samples, i.e., more chemically disordered atomistic structure and higher Xe impurity concentration in the 10{sup 16} Xe/cm{sup 2} implanted sample.}
doi = {10.1063/1.1766093}
journal = []
issue = {3}
volume = {96}
journal type = {AC}
place = {United States}
year = {2004}
month = {Aug}
}
title = {Solid phase epitaxy of amorphous silicon carbide: Ion fluence dependence}
author = {Bae, I -T, Ishimaru, Manabu, Hirotsu, Yoshihiko, Sickafus, Kurt E, and Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)]}
abstractNote = {We have investigated the effect of radiation damage and impurity concentration on solid phase epitaxial growth of amorphous silicon carbide (SiC) as well as microstructures of recrystallized layer using transmission electron microscopy. Single crystals of 6H-SiC with (0001) orientation were irradiated with 150 keV Xe ions to fluences of 10{sup 15} and 10{sup 16}/cm{sup 2}, followed by annealing at 890 deg. C. Full epitaxial recrystallization took place in a specimen implanted with 10{sup 15} Xe ions, while retardation of recrystallization was observed in a specimen implanted with 10{sup 16}/cm{sup 2} Xe ions. Atomic pair-distribution function analyses and energy dispersive x-ray spectroscopy results suggested that the retardation of recrystallization of the 10{sup 16} Xe/cm{sup 2} implanted sample is attributed to the difference in amorphous structures between the 10{sup 15} and 10{sup 16} Xe/cm{sup 2} implanted samples, i.e., more chemically disordered atomistic structure and higher Xe impurity concentration in the 10{sup 16} Xe/cm{sup 2} implanted sample.}
doi = {10.1063/1.1766093}
journal = []
issue = {3}
volume = {96}
journal type = {AC}
place = {United States}
year = {2004}
month = {Aug}
}