Abstract
High lateral density quantum dot (QD) structures are self-formed by growing GaAs/InAs short-period superlattices (SLs) on InP (411)A substrates by gas source molecular beam epitaxy. Multilayer QD structures sandwiched with InP barrier layers showed a strong photoluminescence emission. The 1.3-1.6 {mu}m wavelength emission was easily obtained and precisely controlled by regulating the SL period as well as the number of InAs monolayers (layer thickness). This wavelength control can be understood by considering the carrier confinement along the growth direction as well as the effective well depth change.
Mori, J;
Nakano, T;
Shimada, T;
Hasegawa, S;
Asahi, H
[1]
- Institute of Scientific and Industrial Research, Osaka University, 8-I Mihogaoka, Ibaraki, Osaka 567-0047 (Japan)
Citation Formats
Mori, J, Nakano, T, Shimada, T, Hasegawa, S, and Asahi, H.
Wavelength control of 1.3-1.6{mu}m light emission from the quantum dots self-formed in GaAs/InAs short-period superlattices grown on InP (411)A substrates.
United States: N. p.,
2004.
Web.
doi:10.1063/1.1765860.
Mori, J, Nakano, T, Shimada, T, Hasegawa, S, & Asahi, H.
Wavelength control of 1.3-1.6{mu}m light emission from the quantum dots self-formed in GaAs/InAs short-period superlattices grown on InP (411)A substrates.
United States.
https://doi.org/10.1063/1.1765860
Mori, J, Nakano, T, Shimada, T, Hasegawa, S, and Asahi, H.
2004.
"Wavelength control of 1.3-1.6{mu}m light emission from the quantum dots self-formed in GaAs/InAs short-period superlattices grown on InP (411)A substrates."
United States.
https://doi.org/10.1063/1.1765860.
@misc{etde_20619067,
title = {Wavelength control of 1.3-1.6{mu}m light emission from the quantum dots self-formed in GaAs/InAs short-period superlattices grown on InP (411)A substrates}
author = {Mori, J, Nakano, T, Shimada, T, Hasegawa, S, and Asahi, H}
abstractNote = {High lateral density quantum dot (QD) structures are self-formed by growing GaAs/InAs short-period superlattices (SLs) on InP (411)A substrates by gas source molecular beam epitaxy. Multilayer QD structures sandwiched with InP barrier layers showed a strong photoluminescence emission. The 1.3-1.6 {mu}m wavelength emission was easily obtained and precisely controlled by regulating the SL period as well as the number of InAs monolayers (layer thickness). This wavelength control can be understood by considering the carrier confinement along the growth direction as well as the effective well depth change.}
doi = {10.1063/1.1765860}
journal = []
issue = {3}
volume = {96}
journal type = {AC}
place = {United States}
year = {2004}
month = {Aug}
}
title = {Wavelength control of 1.3-1.6{mu}m light emission from the quantum dots self-formed in GaAs/InAs short-period superlattices grown on InP (411)A substrates}
author = {Mori, J, Nakano, T, Shimada, T, Hasegawa, S, and Asahi, H}
abstractNote = {High lateral density quantum dot (QD) structures are self-formed by growing GaAs/InAs short-period superlattices (SLs) on InP (411)A substrates by gas source molecular beam epitaxy. Multilayer QD structures sandwiched with InP barrier layers showed a strong photoluminescence emission. The 1.3-1.6 {mu}m wavelength emission was easily obtained and precisely controlled by regulating the SL period as well as the number of InAs monolayers (layer thickness). This wavelength control can be understood by considering the carrier confinement along the growth direction as well as the effective well depth change.}
doi = {10.1063/1.1765860}
journal = []
issue = {3}
volume = {96}
journal type = {AC}
place = {United States}
year = {2004}
month = {Aug}
}