Abstract
The equilibrium crystal shape (ECS) of GaAs homoepitaxially grown on a nanoscale SiO{sub 2}-patterned (001) plane by molecular beam epitaxy is investigated. A GaAs epilayer selectively grown on a nanoscale area bounded by a circular SiO{sub 2} mask undergoes faceting, resulting in a pyramidal shape with {l_brace}110{r_brace} sidewalls. Growth is slowed or terminated with the generation of these {l_brace}110{r_brace} facets even with a continuing supply of Ga atoms. This implies that the pyramidal shape is energetically very stable. Based on experimental results and the Wulff construction, a {l_brace}110{r_brace}-type sidewall pyramid is proposed as an ECS of GaAs on (001) in nanoscale patterned growth.
Lee, S C;
Brueck, S R.J.
[1]
- Center for High Technology Materials and Department of Electrical and Computer Engineering, University of New Mexico, 1313 Goddard, SE, Albuquerque, New Mexico 87106 (United States)
Citation Formats
Lee, S C, and Brueck, S R.J.
Equilibrium crystal shape of GaAs in nanoscale patterned growth.
United States: N. p.,
2004.
Web.
doi:10.1063/1.1757657.
Lee, S C, & Brueck, S R.J.
Equilibrium crystal shape of GaAs in nanoscale patterned growth.
United States.
https://doi.org/10.1063/1.1757657
Lee, S C, and Brueck, S R.J.
2004.
"Equilibrium crystal shape of GaAs in nanoscale patterned growth."
United States.
https://doi.org/10.1063/1.1757657.
@misc{etde_20619056,
title = {Equilibrium crystal shape of GaAs in nanoscale patterned growth}
author = {Lee, S C, and Brueck, S R.J.}
abstractNote = {The equilibrium crystal shape (ECS) of GaAs homoepitaxially grown on a nanoscale SiO{sub 2}-patterned (001) plane by molecular beam epitaxy is investigated. A GaAs epilayer selectively grown on a nanoscale area bounded by a circular SiO{sub 2} mask undergoes faceting, resulting in a pyramidal shape with {l_brace}110{r_brace} sidewalls. Growth is slowed or terminated with the generation of these {l_brace}110{r_brace} facets even with a continuing supply of Ga atoms. This implies that the pyramidal shape is energetically very stable. Based on experimental results and the Wulff construction, a {l_brace}110{r_brace}-type sidewall pyramid is proposed as an ECS of GaAs on (001) in nanoscale patterned growth.}
doi = {10.1063/1.1757657}
journal = []
issue = {2}
volume = {96}
journal type = {AC}
place = {United States}
year = {2004}
month = {Jul}
}
title = {Equilibrium crystal shape of GaAs in nanoscale patterned growth}
author = {Lee, S C, and Brueck, S R.J.}
abstractNote = {The equilibrium crystal shape (ECS) of GaAs homoepitaxially grown on a nanoscale SiO{sub 2}-patterned (001) plane by molecular beam epitaxy is investigated. A GaAs epilayer selectively grown on a nanoscale area bounded by a circular SiO{sub 2} mask undergoes faceting, resulting in a pyramidal shape with {l_brace}110{r_brace} sidewalls. Growth is slowed or terminated with the generation of these {l_brace}110{r_brace} facets even with a continuing supply of Ga atoms. This implies that the pyramidal shape is energetically very stable. Based on experimental results and the Wulff construction, a {l_brace}110{r_brace}-type sidewall pyramid is proposed as an ECS of GaAs on (001) in nanoscale patterned growth.}
doi = {10.1063/1.1757657}
journal = []
issue = {2}
volume = {96}
journal type = {AC}
place = {United States}
year = {2004}
month = {Jul}
}