Abstract
Fluorinated amorphous carbon (a-C:F) films were deposited by radio frequency bias assisted microwave plasma electron cyclotron resonance chemical vapor deposition with tetrafluoromethane (CF{sub 4}) and acetylene (C{sub 2}H{sub 2}) as precursors. The deposition process was performed at two flow ratios R=0.90 and R=0.97, where R=CF{sub 4}/(CF{sub 4}+C{sub 2}H{sub 2}). The samples were annealed at 300 deg. C for 30 min. in a N{sub 2} atmosphere. Both Fourier transform infrared and electron spectroscopy for chemical analyzer were used to characterize the a-C:F film chemical bond and fluorine concentration, respectively. A high resolution electron energy loss spectrometer was applied to detect the electronic structure. The higher CF{sub 4} flow ratio (R=0.97) produced more sp{sup 3} linear structure, and it made the a-C:F film smoother and softer. A lifetime of around 0.34 {mu}s and an energy gap of {approx}2.75 eV were observed in both the as-deposited and after annealing conditions. The short carriers lifetime in the a-C:F film made the photoluminescence peak blueshift. The annealing changed both the structure and composition of the a-C:F film. The type of fluorocarbon bond and electronic structure characterized the mechanical and physical properties of a-C:F film.
Huang, K P;
Lin, P;
Shih, H C;
[1]
Department of Materials Science and Engineering, National Tsing-Hua University, Hsinchu, Taiwan 300 (China)]
- Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu, Taiwan 300 (China)
Citation Formats
Huang, K P, Lin, P, Shih, H C, and Department of Materials Science and Engineering, National Tsing-Hua University, Hsinchu, Taiwan 300 (China)].
Structures and properties of fluorinated amorphous carbon films.
United States: N. p.,
2004.
Web.
doi:10.1063/1.1755849.
Huang, K P, Lin, P, Shih, H C, & Department of Materials Science and Engineering, National Tsing-Hua University, Hsinchu, Taiwan 300 (China)].
Structures and properties of fluorinated amorphous carbon films.
United States.
https://doi.org/10.1063/1.1755849
Huang, K P, Lin, P, Shih, H C, and Department of Materials Science and Engineering, National Tsing-Hua University, Hsinchu, Taiwan 300 (China)].
2004.
"Structures and properties of fluorinated amorphous carbon films."
United States.
https://doi.org/10.1063/1.1755849.
@misc{etde_20619011,
title = {Structures and properties of fluorinated amorphous carbon films}
author = {Huang, K P, Lin, P, Shih, H C, and Department of Materials Science and Engineering, National Tsing-Hua University, Hsinchu, Taiwan 300 (China)]}
abstractNote = {Fluorinated amorphous carbon (a-C:F) films were deposited by radio frequency bias assisted microwave plasma electron cyclotron resonance chemical vapor deposition with tetrafluoromethane (CF{sub 4}) and acetylene (C{sub 2}H{sub 2}) as precursors. The deposition process was performed at two flow ratios R=0.90 and R=0.97, where R=CF{sub 4}/(CF{sub 4}+C{sub 2}H{sub 2}). The samples were annealed at 300 deg. C for 30 min. in a N{sub 2} atmosphere. Both Fourier transform infrared and electron spectroscopy for chemical analyzer were used to characterize the a-C:F film chemical bond and fluorine concentration, respectively. A high resolution electron energy loss spectrometer was applied to detect the electronic structure. The higher CF{sub 4} flow ratio (R=0.97) produced more sp{sup 3} linear structure, and it made the a-C:F film smoother and softer. A lifetime of around 0.34 {mu}s and an energy gap of {approx}2.75 eV were observed in both the as-deposited and after annealing conditions. The short carriers lifetime in the a-C:F film made the photoluminescence peak blueshift. The annealing changed both the structure and composition of the a-C:F film. The type of fluorocarbon bond and electronic structure characterized the mechanical and physical properties of a-C:F film.}
doi = {10.1063/1.1755849}
journal = []
issue = {1}
volume = {96}
journal type = {AC}
place = {United States}
year = {2004}
month = {Jul}
}
title = {Structures and properties of fluorinated amorphous carbon films}
author = {Huang, K P, Lin, P, Shih, H C, and Department of Materials Science and Engineering, National Tsing-Hua University, Hsinchu, Taiwan 300 (China)]}
abstractNote = {Fluorinated amorphous carbon (a-C:F) films were deposited by radio frequency bias assisted microwave plasma electron cyclotron resonance chemical vapor deposition with tetrafluoromethane (CF{sub 4}) and acetylene (C{sub 2}H{sub 2}) as precursors. The deposition process was performed at two flow ratios R=0.90 and R=0.97, where R=CF{sub 4}/(CF{sub 4}+C{sub 2}H{sub 2}). The samples were annealed at 300 deg. C for 30 min. in a N{sub 2} atmosphere. Both Fourier transform infrared and electron spectroscopy for chemical analyzer were used to characterize the a-C:F film chemical bond and fluorine concentration, respectively. A high resolution electron energy loss spectrometer was applied to detect the electronic structure. The higher CF{sub 4} flow ratio (R=0.97) produced more sp{sup 3} linear structure, and it made the a-C:F film smoother and softer. A lifetime of around 0.34 {mu}s and an energy gap of {approx}2.75 eV were observed in both the as-deposited and after annealing conditions. The short carriers lifetime in the a-C:F film made the photoluminescence peak blueshift. The annealing changed both the structure and composition of the a-C:F film. The type of fluorocarbon bond and electronic structure characterized the mechanical and physical properties of a-C:F film.}
doi = {10.1063/1.1755849}
journal = []
issue = {1}
volume = {96}
journal type = {AC}
place = {United States}
year = {2004}
month = {Jul}
}